Surface recombination velocity of silicon wafers by photoluminescence

Baek, Donkyu; Rouvimov, Sergei; Kim, B.; Jo, Tae-Hun; Schroder, D. K.

doi:10.1063/1.1884258

Cited by 39 publications

(22 citation statements)

References 17 publications

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“…Also, considering that the rear surface is not polished, a value of 6000 cm s −1 for S REAR might be unrealistically low [26]. However, with the extremely low carrier concentration of this substrate, surface states could be bending the band quite strongly, preventing carriers from getting close to the surface and reducing the effective surface recombination velocities even without passivation [27].…”

Section: Discussionmentioning

confidence: 99%

Room temperature photo-response of titanium supersaturated silicon at energies over the bandgap

Olea

López

Antolín

et al. 2016

J. Phys. D: Appl. Phys.

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Section: Discussionmentioning

confidence: 99%

Room temperature photo-response of titanium supersaturated silicon at energies over the bandgap

Olea

López

Antolín

et al. 2016

J. Phys. D: Appl. Phys.

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“…Note that the photovoltaic efficiency is this electric power output divided by the solar power input = 1000 W/m 2 . As for the surface recombination velocity, we assume that it is equal in n-and p-sides, although it is typically somewhat smaller in the n-side [57]. So, we take = = .…”

Section: Optimal Thickness Of the Photovoltaic Devicementioning

confidence: 99%

“…Noting that, for this given range of surface recombination velocities, this velocity is of more importance in a thinner device than in a thicker one, it is understandable that the photovoltaic efficiency is more affected by the surface recombination velocity at smaller thicknesses. In [57], it is said that the recombination velocity for an unprepared sample is of the order of 10 2 m/s. After passivation of dangling bonds by an HF/H2O, it was lowered to about ~10 m/s [57].…”

Section: Optimal Thickness Of the Photovoltaic Devicementioning

confidence: 99%

Enhancement of a photovoltaic cell performance by a coupled cooled nanocomposite thermoelectric hybrid system, using extended thermodynamics

Machrafi

2017

Current Applied Physics

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A new analytical mathematical model is developed, describing a cooled photovoltaicthermoelectric hybrid system. The thermoelectric material is a nanocomposite where the model takes into account size-dependent non-local thermoelectric properties from an extended thermodynamic point of view. The photovoltaic device powers also the cooling system. The model determines first the optimum thickness of the photovoltaic device, then studies the influence of several size-related parameters on the thermoelectric efficiency (also related to the figure of merit) and finally, coupled to a cooling device, the overall efficiency. For the photovoltaic part, the model is applied to two materials, mono-crystalline and poly-crystalline silicon. The thermoelectric part of the model is applied to an n-leg nanocomposite made out of Sb2Te3 nanoparticles in a Bi2Te3 matrix and of a p-leg nanocomposite made out of Bi2Se3 nanoparticles in a Bi2Te3 matrix. An optimal total photovoltaic device size has been found to be around 127 µm and 1.25 µm for the mono-and poly-crystalline silicon, respectively, leading to efficiencies up to 20 %, depending on photovoltaic recombination characteristics. With the cooling device, the overall efficiency was increased by up to an additional 10 % (an increase of almost 50 %), leading to overall efficiencies around 25 %. IntroductionDevelopments in renewable energy seek to alleviate the global energy crisis and reduce its impact on the environment. One way is to use solar energy. By means of photovoltaic (PV) solar cells, photonic energy is mainly converted into electricity and waste heat. PV cells have relatively low conversion efficiency, because they can only utilize part of the incident solar energy due to its given bandgap, and require often hybrid configurations [1]. One way to increase the efficiency of PV cells is using thermal management by means of heat sinks [2]. Otherwise, the waste heat can be used in order to be converted to more electricity via thermoelectric devices (TE) [3][4][5][6]. As a common PV cell converts a large amount of solar irradiant energy into heat, a hybrid PV cell and TE device (PVTE) may be a prospective way to improve the overall efficiency of solar energy [7]. One form of PVTE systems uses the socalled spectrum splitting concentrating system, where the photons with an energy out of the PV working waveband are incident to the TE devices, generating thereby electricity via the thermoelectric effect [8][9][10]. This system is complex and the heat produced from the PV is still not used. Connecting the TE device directly at the dark side of the PV cell is simpler and theoretically all thermal energy can be used by the TE device [11], of which the efficiency can be even increased by cooling the TE device [7,12]. It is the latter hybrid system that we consider in this work. As the efficiency in TE devices are proportional (though not necessarily linearly) on mainly the temperature difference across the device and the figure of merit, both are to be increased. The temper...

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“…The knowledge of their variation with thin film deposition conditions would allow us to optimise the fabrication parameters. Photoconductance decay [6], surface photo voltage [7], photoluminescence [8], transient microwave reflectance technique [9] and Thin Solid Films 518 (2010) [1767][1768][1769][1770][1771][1772][1773] quasi steady state photo conductance [10] are widely used for characterizing the minority carrier lifetime and diffusion length. Although the number of methods for evaluating SRV and minority carrier lifetime has been reported, specific environment conditions and complex techniques are required in all these methods, which limit the wide application of these techniques.…”

Section: Introductionmentioning

confidence: 99%

Non-destructive evaluation of carrier transport properties in CuInS2 and CuInSe2 thin films using photothermal deflection technique

et al. 2010

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Photothermal deflection technique (PTD) is a non-destructive tool for measuring the temperature distribution in and around a sample, due to various non-radiative decay processes occurring within the material. This tool was used to measure the carrier transport properties of CuInS 2 and CuInSe 2 thin films. Films with thickness <1 μm were prepared with different Cu/In ratios to vary the electrical properties. The surface recombination velocity was least for Cu-rich films (5 × 10 5 cm/s for CuInS 2 , 1×10 3 cm/s for CuInSe 2 ), while stoichiometric films exhibited high mobility (0.6 cm 2 /V s for CuInS 2, 32 cm 2 /V s for CuInSe 2 ) and high minority carrier lifetime (0.35 µs for CuInS 2 , 12 µs for CuInSe 2 ).

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Surface recombination velocity of silicon wafers by photoluminescence

Cited by 39 publications

References 17 publications

Room temperature photo-response of titanium supersaturated silicon at energies over the bandgap

Room temperature photo-response of titanium supersaturated silicon at energies over the bandgap

Enhancement of a photovoltaic cell performance by a coupled cooled nanocomposite thermoelectric hybrid system, using extended thermodynamics

Non-destructive evaluation of carrier transport properties in CuInS2 and CuInSe2 thin films using photothermal deflection technique

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