Surface Reactivity and Plasma Energetics of SiH Radicals during Plasma Deposition of Silicon-Based Materials

Kessels, W.M.M.; McCurdy, Patrick R.; Williams, Keri L.; Barker, G. R.; Venturo, Vincent A.; Fisher, Ellen R.

doi:10.1021/jp013895q

Cited by 27 publications

(23 citation statements)

References 46 publications

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“…12,[18][19][20][21][22][23] These, and estimates for those not measured, are given in Table II. 12,[18][19][20][21][22][23] These, and estimates for those not measured, are given in Table II.…”

Section: A Neutral Radicalsmentioning

confidence: 99%

Surface radicals in silane/hydrogen discharges

Horváth

Gallagher

2009

Journal of Applied Physics

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Density of CH 3 radicals and the ionic composition in a low pressure methane plasma beamUsing threshold ionization mass spectrometry, radical densities have been measured at the substrate surface of a radio frequency discharge in silane plus hydrogen vapor. The conditions are 100-300 Pa pressure and a ratio ͑R͒ of hydrogen flow/silane flow typical of discharges used to produce large area amorphous ͑R =20͒ and microcrystalline ͑R =40͒ silicon. For comparison, we include measurements in pure-silane vapor. The neutral radicals observed in the mixed gases are H, SiH 3 , Si 2 H 2 , and Si 2 H 5 , with decreasing flux in that order. ͑Si 2 H 4 is also seen in pure silane and SiH 2 for R = 20.͒ The H flux is sufficient for major film etching and restructuring, particularly for R = 40. The ion-bombardment species were also measured, establishing that Si y H n + ͑y =1-3͒ ion flux is much larger than the H n + ͑n =1-3͒ flux. The ion flux provides 15Ϯ 4% of the total Si flux to the film for R = 20 and 37Ϯ 10% for R = 40. This is larger than in pure-silane discharges, and it may be very important to film properties due to the impact energy.

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Section: A Neutral Radicalsmentioning

confidence: 99%

Surface radicals in silane/hydrogen discharges

Horváth

Gallagher

2009

Journal of Applied Physics

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“…The "imaging of radicals interacting with surfaces" (IRIS) method monitors LIF from radicals before and after they impinge on a surface, and continues to be HERMAN used to determine surface reaction probabilities in CVD and PECVD (63). The reaction probability of SiH on a growing a:Si-H surface was measured to be ≈0.96 (64); that of NH 2 was shown to exceed unity in several NH 3 mixture plasmas, indicating that NH 2 is produced in surface reactions (65); and that of CF 2 was shown to depend critically on the fluorocarbon in the plasma and the surface, in some cases indicating etching and in others deposition (66).…”

Section: Laser-induced Fluorescencementioning

confidence: 99%

Optical Diagnostics for Thin Film Processing

Herman

2003

Annu. Rev. Phys. Chem.

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Optical diagnostics are used to probe the plasma or neutral gas above the substrate, particles in the gas or on the surface, the film surface and reactor walls, the film itself, and the substrate during thin film processing. The development and application of optical probes are highlighted, in particular for analyzing plasma/gas phase intermediates and products and film composition, and performing metrology, thermometry, and endpoint detection and control. Probing etching (particularly plasma etching) and deposition (particularly epitaxy) are emphasized.

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“…For example silane plasmas are used in solar cells [10] and microelectronics [11], diamond-like carbon (DLC) coatings are used as hard, wear-resistant barriers for mechanical parts and biomedical implants [12], while soft functionalized plasma polymers may be used to attach biomolecules to surfaces for improved biocompatibility or drug delivery [13]. Recently, plasma deposition has enabled the convergence of technologies in the nano and micro scale range, including controlling interfacial bonding in composites [14], fabrication of nano-thin films for electronic applications [15,16] and microscale features to control protein adsorption [17].…”

Section: Introductionmentioning

confidence: 99%

The importance of ions in low pressure PECVD plasmas

2015

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Plasma enhanced chemical vapor deposition (PECVD) can be used to fabricate surfaces with a wide range of physical and chemical properties and are used in a variety of applications. Despite this, the mechanisms by which PECVD films grow are not well understood. Moreover, the species which contribute to film growth can be considered quite differently depending on the process. Particularly for functionalized plasma polymer films, the growth mechanisms are considered with respect to the chemistry of the depositing species, ignoring the physics of plasmas. Here we analyse the role ions play in the deposition of three common classes of depositing plasmas, and how these closely related fields treat ions very differently.

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Surface Reactivity and Plasma Energetics of SiH Radicals during Plasma Deposition of Silicon-Based Materials

Cited by 27 publications

References 46 publications

Surface radicals in silane/hydrogen discharges

Surface radicals in silane/hydrogen discharges

Optical Diagnostics for Thin Film Processing

The importance of ions in low pressure PECVD plasmas

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