Surface quantum transport in tellurium inversion layers

Bouat, J.; Thuillier, J. C.

doi:10.1016/0039-6028(78)90536-8

Cited by 17 publications

(3 citation statements)

References 4 publications

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“…Among them we shall use the E-k dispersion relations as given by Bouat et al [236] and Ortenberg and Button [237], respectively. Among them we shall use the E-k dispersion relations as given by Bouat et al [236] and Ortenberg and Button [237], respectively.…”

Section: Magnetothermopower In Quantum Dots Of Telluriummentioning

confidence: 99%

“…(a) The dispersion relation of the conduction electrons of Tellurium can be written in accordance with Bouat et al as [236] …”

Section: Magnetothermopower In Quantum Dots Of Telluriummentioning

confidence: 99%

“…Figure 1.30 Fig. Tellurium is an important elemental semiconductor, and the TPSM in QDs of Tellurium has been investigated in accordance with the models of Bouat et al [236] and Ortenberg and Button [237], respectively. From the aforementioned discussions, we realize that the signature of three-dimensional quantization is forthwith evident from Figs In formulating the generalized electron energy spectrum for nonlinear optical materials, we have considered the crystal-field splitting, the anisotropies in the momentum-matrix elements, and the spin-orbit splitting parameters, respectively.…”

Section: Bismuth Telluridementioning

confidence: 99%

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Thermoelectric Power in Quantum Dots Under Large Magnetic Field

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Bhattacharya

2010

Thermoelectric Power in Nanostructured Materials

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Ah attempt is rnade to study the thermoelectric power of the electrons and holes in quantum dora of Te under large rrmgaetic field in accordance with various band models. Ir la found that the thermopower for both types of carriers decreases with increasing carrier conceaatration in art oscillatory manner. Ir also increases with increasing film thickness and the numerir values of the thermopower for holes in quantum dots of Te are greater than that of the $ame for the electrorm.

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