1997
DOI: 10.1016/s0924-4247(97)01495-7
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Surface quality of {111} side-walls in KOH-etched cavities

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Cited by 18 publications
(9 citation statements)
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“…Very little work has been done to investigate the surface quality of sidewalls, including the potential causes for roughness. Work by Merveille [21] suggests that surface imperfections may originate from mechanical stress in the wafer or precipitation of impurities, such as oxygen, during processing. We continue to work towards better sidewall surface quality.…”
Section: Discussionmentioning
confidence: 99%
“…Very little work has been done to investigate the surface quality of sidewalls, including the potential causes for roughness. Work by Merveille [21] suggests that surface imperfections may originate from mechanical stress in the wafer or precipitation of impurities, such as oxygen, during processing. We continue to work towards better sidewall surface quality.…”
Section: Discussionmentioning
confidence: 99%
“…It is the result of chemical reactions between the surface atoms and the etchant phase molecules. Wet etching is a popular process for the creation of microstructures in a wide range of applications, such as pressure sensors [20], gas-flow sensors [21] or micro-switches [22]. In this process, the advancing front propagates with a different rate depending on the crystallographic direction.…”
Section: Physical Model For Wet Etchingmentioning
confidence: 99%
“…At lower temperatures, this cutoff moves slightly towards shorter wavelengths (∼1:07 μm at 77 K) [22]. For silicon diffraction gratings that are fabricated using wet etch processes to create the diffracting surfaces, a low oxygen content also reduces the facet roughness [39,40], although it is not clear that the surface roughness of the facets is the dominant scattering process [41].…”
Section: Siliconmentioning
confidence: 99%