Surface Properties of Semiconductors and Dynamics of Ionic Crystals

Skobel’tsyn, D. V.

doi:10.1007/978-1-4684-1578-0

Cited by 3 publications

(2 citation statements)

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Section: Resultsmentioning

confidence: 99%

“…At the same time, electrons and holes can recombine at deep-level defects at the AlN/diamond interface. However, not all defects at the interface are involved in the recombination process, only less than 10% or even 0.1% of them act as recombination centers [37,38]. Unlike defects in the bulk of AlN and diamond located near the interface, the interface defects can capture electrons and holes from both semiconductors, which is especially critical for forwardbiased p-n heterojunctions.…”

Section: Resultsmentioning

confidence: 99%

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Bright Single-Photon Emitting Diodes Based on the Silicon-Vacancy Center in AlN/Diamond Heterostructures

Khramtsov

Fedyanin

2020

Nanomaterials

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Practical implementation of many quantum information and sensing technologies relies on the ability to efficiently generate and manipulate single-photon photons under ambient conditions. Color centers in diamond, such as the silicon-vacancy (SiV) center, have recently emerged as extremely attractive single-photon emitters for room temperature applications. However, diamond is a material at the interface between insulators and semiconductors. Therefore, it is extremely difficult to excite color centers electrically and consequently develop bright and efficient electrically driven single-photon sources. Here, using a comprehensive theoretical approach, we propose and numerically demonstrate a concept of a single-photon emitting diode (SPED) based on a SiV center in a nanoscale AlN/diamond heterojunction device. We find that in spite of the high potential barrier for electrons in AlN at the AlN/diamond heterojunction, under forward bias, electrons can be efficiently injected from AlN into the i-type diamond region of the n-AlN/i-diamond/p-diamond heterostructure, which ensures bright single-photon electroluminescence (SPEL) of the SiV center located in the i-type diamond region. The maximum SPEL rate is more than five times higher than what can be achieved in SPEDs based on diamond p-i-n diodes. Despite the high density of defects at the AlN/diamond interface, the SPEL rate can reach about 4 Mcps, which coincides with the limit imposed by the quantum efficiency and the lifetime of the shelving state of the SiV center. These findings provide new insights into the development of bright room-temperature electrically driven single-photon sources for quantum information technologies and, we believe, stimulate further research in this area.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Bright Single-Photon Emitting Diodes Based on the Silicon-Vacancy Center in AlN/Diamond Heterostructures

Khramtsov

Fedyanin

2020

Nanomaterials

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Weak Field Tuning of Transition-Metal Dopant Hybridization in Solid Hosts

et al. 2018

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Transition-metal (TM)-doped solids are one of the most extensively studied compounds in the fields of catalysis, magnetism, solar cells, etc., due to their tunable optoelectronic properties that stem from TM energy-level hybridization. In this work, the hybridization of the Ni–O bond in TiO2:Ni films was controlled in a stable, reversible manner via surface functionalization with polarized molecules. The Ni-doped TiO2 surface was functionalized with para-benzoic acid groups to modify the electron density distribution within the film. The dopant distribution and elemental composition at the interface are probed via high-resolution transmission electron microscopy coupled with electron energy loss spectroscopy mapping. The effect of the surface modification on the dopant, Ni2+, is studied via surface-sensitive electronic characterization techniques, such as X-ray photoelectron spectroscopy and soft X-ray absorption spectroscopy (XAS). The electron density in the valence orbitals of the dopant was observed to be a function of the dipole moment of the para-substituted benzoic acid. The resulting XAS spectra of the Ni2+ after surface modification of TiO2:Ni films were modeled (CTM4XAS) and indicated ligand-dependent symmetry breaking around the Ni2+ at the functionalized interface. Therefore, the modified electron density at the interface due to the polarized molecules is observed to impact the hybridization of the TM dopant energy levels in solid hosts. This phenomenon of adaptive dopant hybridization in a solid host (TiO2) can be exploited to obtain tunable optical responses from TM-doped inorganic phosphors, which have an impact in various fields, such as luminescent displays, solar cells, sensors, telecommunications, counterfeit technologies, and biodetection.

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Effects of Weak Electric Field on the Photoluminescence Behavior of Bi³⁺-Doped YVO₄:Eu³⁺ Core–Shell Nanoparticles

et al. 2019

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Tuning the luminescent properties of nanophosphors by modifying the energy level hybridization has been previously achieved by methods such as heat treatments or applying strong magnetic/electric fields. However, these methods can permanently distort the crystal geometry or are limited to the continuous application of strong fields. This work aims to modify the energy level hybridization of doped (Eu3+/Bi3+) YVO4 nanoparticles (NPs) via surface functionalization with polarized molecules. Incorporating Bi3+ into YVO4:Eu3+ core NPs resulted in a red shift of the excitation edge by ∼30 nm and a decrease in the Eu3+ emission lifetime. Moving the Bi3+ to the YVO4 shell layer allowed for the modification of Bi3+/VO4 3– energy level hybridization ion pairs without significant quenching of the Eu3+ ions in the core. Polarized molecules (NH2-BZA and NO2-BZA) were used for selective tuning of the electron density at the interface, impacting the Bi3+/VO4 3– energy level hybridization and the luminescent behavior of the NPs. Higher emission lifetimes and systematic photoluminescent response, that is, an increase or decrease in the excitation intensity based on the direction of the dipole moment, were observed for surface-functionalized core–shell NPs compared to the core NPs. Finally, the surface of the core–shell NPs was decorated with d-biotin to elucidate the effect of this biological ligand on the surface electron density and luminescence behavior of the NPs.

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Surface Properties of Semiconductors and Dynamics of Ionic Crystals

Cited by 3 publications

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Bright Single-Photon Emitting Diodes Based on the Silicon-Vacancy Center in AlN/Diamond Heterostructures

Bright Single-Photon Emitting Diodes Based on the Silicon-Vacancy Center in AlN/Diamond Heterostructures

Weak Field Tuning of Transition-Metal Dopant Hybridization in Solid Hosts

Effects of Weak Electric Field on the Photoluminescence Behavior of Bi³⁺-Doped YVO₄:Eu³⁺ Core–Shell Nanoparticles

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Surface Properties of Semiconductors and Dynamics of Ionic Crystals

Cited by 3 publications

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Bright Single-Photon Emitting Diodes Based on the Silicon-Vacancy Center in AlN/Diamond Heterostructures

Bright Single-Photon Emitting Diodes Based on the Silicon-Vacancy Center in AlN/Diamond Heterostructures

Weak Field Tuning of Transition-Metal Dopant Hybridization in Solid Hosts

Effects of Weak Electric Field on the Photoluminescence Behavior of Bi3+-Doped YVO4:Eu3+ Core–Shell Nanoparticles

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Effects of Weak Electric Field on the Photoluminescence Behavior of Bi³⁺-Doped YVO₄:Eu³⁺ Core–Shell Nanoparticles