Surface properties of antimony doped tin(IV) oxide: A study by electron spectroscopy

Cox, P. A.; Egdell, R.G.; Harding, Clifford V.; Patterson, William R.; Tavener, P.J.

doi:10.1016/0039-6028(82)90322-3

Cited by 164 publications

(68 citation statements)

References 38 publications

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“…In this case, however, some characteristic properties of the grain boundaries in tin oxide have been taken into account. Following the results obtained by X-ray Photoconduction Spectroscopy (XPS) and Ultraviolet Photoconduction Spectroscopy (UPS) (32) it can be argued that grains of (200) (in the second order (400)) orientations do not participate in the trapping mechanisms (33). This was taken into account in the calculation of the trapping centers density, N(t), using the fractions of the occurrence of different orientations, collected in Table 3, obtained from the X-ray diffraction spectra.…”

Section: The Case Of Tin Oxidementioning

confidence: 96%

Section: The Case Of Tin Oxidementioning

confidence: 99%

“…They combine high electrical conductivity with low optical absorption in the visible part of the spectrum (32). The films were grown by the technique of Chemical Vapor Deposition (CVD) (32). The transport properties of the transparent electrodes were determined by Hall effect measurements described previously (21).…”

Section: The Case Of Tin Oxidementioning

confidence: 99%

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Deep levels in semiconductors

Lombos¹

1985

Can. J. Chem.

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This paper is dedicated to Professor Camille Sandorb on the occasion of his 65th birthdayB. A. LOMBOS. Can. J. Chem. 63, 1666 (1985.The role of deep-lying trapping centers in semi-insulating GaAs, polysilicon and polycrystalline tin oxide transparent electrode has been systematically investigated. It was demonstrated that some of the peculiar transport properties of these semiconductors can be elucidated by deep level compensation. A multilevel model is presented to determine the position of the Fermi level as a function of impurity concentrations. These include, quantitatively, the deep-lying levels which have been introduced by doping in the case of GaAs and by grain boundaries in the case of polycrystalline films. In the latter cases the dangling bonds, associated to lattice defects, are characterized by energy levels which are localized in the energy gap. These dangling bonds can act as electron traps when empty and hole traps when occupied. These are the deep levels.In each of the investigated three cases, this concept permitted the elucidation of some of the transport properties of these semiconductors. B. A. LOMBOS. Can. J . Chem. 63, 1666 (1985 On a CtudiC d'une faqon systkmatique le r81e des centres profonds de piegeage dans le GaAs semi-isolant, dans le polysilicium et dans une tlectrode transparente d'oxyde d'Ctain polycristallin. On dCmontre que I'on peut Clucider quelques unes des propriCtCs particulieres de transport de ces semi-conducteurs en faisant appel 2 une compensation par des niveaux profonds. On prCsente un modkle h plusieurs niveaux pour determiner la position du niveau de Fermi en fonction des concentrations des impuretCs. Ceux-ci comprennent quantitativernent les niveaux profonds que I'on a introduit par dopage dans le cas du GaAs et par les joints des grains dans le cas des films polycristallins. Dans ces derniers cas, les liaisons pendantes associCes aux dCfauts du rCseau sont associees h des niveaux dlCnergie qui sont localises dans la bande interdite. Ces liaisons pendantes peuvent agir comrne piege d'Clectrons quand elles sont vides et cornrne piege de trous lorsqu'elles sont occupCes. Ce sont les niveaux profonds.Dans chacun des trois cas CtudiCs, ce concept perrnet dlClucider certaines propriCtCs de transport de ces semi-conducteurs.[Traduit par le journal] Introduction The role of deep-lying impurity levels in semiconductors became important with the discovery of semi-insulating GaAs (SI GaAs) (1). This modification of the normally semiconducting GaAs resulted in the possibility of the realization of a number of solid state devices and integrated circuits by epitaxial technology. Due to the inherent electrical properties of GaAs, superior to those of silicon and germanium, the wellknown classical active materials for the microelectronic industry, GaAs components have improved properties. These include their high frequency response, high temperature or power handling capacity, radiation hardness for satellite electronics, and the possibility for optoelectronic applications, such ...

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Section: The Case Of Tin Oxidementioning

confidence: 96%

Section: The Case Of Tin Oxidementioning

confidence: 99%

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Deep levels in semiconductors

Lombos¹

1985

Can. J. Chem.

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“…These applications have stimulated intensive study of its surface properties [4,5,6,7,8,9,10,11,12,13,14,15,16,17], concentrating mainly on the (110) surface (see fig. 1), which is the most stable.…”

Section: Introductionmentioning

confidence: 99%

The structure of the stoichiometric and reduced SnO2(110) surface

et al. 1995

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First-principles calculations based on density functional theory (DFT) and the pseudopotential method have been used to study the stoichiometric and reduced SnO 2 (110) surface. The ionic relaxations are found to be moderate for both the stoichiometric and reduced surfaces, and are very similar to those found in recent DFT-pseudopotential work on TiO 2 . Removal of neutral oxygen leaves two electrons per oxygen on the surface, which are distributed in channels passing through bridging oxygen sites. The associated electron density can be attributed to reduction of tin from Sn 4+ to Sn 2+ , but only if the charge distribution on Sn 2+ is recognized to be highly asymmetric. Reduction of the surface gives rise to a broad distribution of gap states, in qualitative agreement with spectroscopic measurements.

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“…Coupled with the very pronounced surface segregation of Tl found for both samples, these observations suggest that Tl may be partly accommodated at the surface as Tl þ : the propensity of lone pair cations of this sort to segregate to surface sites is well documented. 26,27 The Tl þ would effectively act a two electron acceptor, partly compensating the charge carriers arising from oxygen vacancies or other native donor defects. Compensation of this sort has been found in Bi-doped PbO 2 , where Bi acts as an acceptor rather than as a donor.…”

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Band gap engineering of In2O3 by alloying with Tl2O3

Scanlon

Regoutz

Egdell

et al. 2013

Applied Physics Letters

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Efficient modulation of the bandgap of In2O3 will open up a route to improved electronic properties. We demonstrate using ab initio calculations that Tl incorporation into In2O3 reduces the band gap and confirm that narrowing of the gap is observed by X-ray photoemission spectroscopy on ceramic surfaces. Incorporation of Tl does not break the symmetry of the allowed optical transitions, meaning that the doped thin films should retain optical transparency in the visible region, in combination with a lowering of the conduction band effective mass. We propose that Tl-doping may be an efficient way to increase the dopability and carrier mobility of In2O3.

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Surface properties of antimony doped tin(IV) oxide: A study by electron spectroscopy

Cited by 164 publications

References 38 publications

Deep levels in semiconductors

Deep levels in semiconductors

The structure of the stoichiometric and reduced SnO2(110) surface

Band gap engineering of In2O3 by alloying with Tl2O3

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