Surface Processing of CdTe Detectors Using Hydrogen Bromide-Based Etching Solution

Niraula, M.; Yasuda, K.; Takai, N.; Matsumoto, Mariko; Suzuki, Yoshihisa; Tsukamoto, Yuya; Ito, Yuki; Sugimoto, Sunao; Kouno, Shunsuke; Agata, Y.

doi:10.1109/led.2015.2450835

Cited by 6 publications

(2 citation statements)

References 12 publications

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“…This serves to produce a Te-rich layer at the back surface and in many cases to also remove residues from the Cl activation process. [11,[22][23][24][25][26][27][28][29][30][31] Shallow etching of CdTe, specifically processes that selectively remove Cd, are typically used. Additionally, etching can help in forming better Ohmic contacts and thus has been widely used.…”

Section: Introductionmentioning

confidence: 99%

Observation and Implications of Composition Inhomogeneity Along Grain Boundaries in Thin Film Polycrystalline CdTe Photovoltaic Devices

Misra

Aguiar

Sun

et al. 2019

Adv Materials Inter

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Leading photovoltaic technologies such as multicrystalline Si, CdTe, Cu(In,Ga)Se 2 and lead halide perovskites are polycrystalline, yet achieve relatively high performance. At the moment polycrystalline photovoltaic technologies stand at a juncture where further advances in device performance and reliability necessitate additional characterization and modelling to include nanoscale property variations. Properties and implications of grain boundaries have been previously studied, yet chemistry variations along individual grain boundaries and its implications have not yet been fully explored. Here, we report on the effects of bromine etching of CdTe absorber layers on the nanoscale chemistry. Bromine etching is commonly used for improving CdTe back contacts, yet we report it removes both cadmium and chlorine along grain boundaries to depths closer to 1µm. Two dimensional device simulations reveal these composition modifications limit photovoltaic performance. Since grain boundaries and their intersections with surfaces and interfaces are universal to thin film photovoltaics, these findings call for similar studies in each of the photovoltaic technologies to further enable advances.Received: ((will be filled in by the editorial staff))Revised: ((will be filled in by the editorial staff))

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Section: Introductionmentioning

confidence: 99%

Observation and Implications of Composition Inhomogeneity Along Grain Boundaries in Thin Film Polycrystalline CdTe Photovoltaic Devices

Misra

Aguiar

Sun

et al. 2019

Adv Materials Inter

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show abstract

“…Здесь необходимо отметить, что в настоящее время бинарные компоненты системы ZnSe-CdTe находят ши-рокое применение в опто-и микроэлектронике, в частности, при разработке лазеров [3] солнечных элементов [4], детекторов рентгеновского [5] и γ-излучения [6]. Уникальные физико-химические поверхностные свойства CdTe и ZnSe обусловливают перспективы их применения в газовом анализе [1].…”

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Synthesis and Surface Physicochemical Proper Ties of (CDTE)0.03(ZNSE)0.97 Solid Solution

Podgornyi

Podgornaya

Skutin

et al. 2017

DSMM

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Electric field mapping by Pockels effect and I(V) characteristic of CdTe nuclear detectors by different Pt contact deposition

Lmai,

Elouafi,

Chafi

et al. 2024

Materials Today: Proceedings

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Surface Processing of CdTe Detectors Using Hydrogen Bromide-Based Etching Solution

Cited by 6 publications

References 12 publications

Observation and Implications of Composition Inhomogeneity Along Grain Boundaries in Thin Film Polycrystalline CdTe Photovoltaic Devices

Observation and Implications of Composition Inhomogeneity Along Grain Boundaries in Thin Film Polycrystalline CdTe Photovoltaic Devices

Synthesis and Surface Physicochemical Proper Ties of (CDTE)0.03(ZNSE)0.97 Solid Solution

Electric field mapping by Pockels effect and I(V) characteristic of CdTe nuclear detectors by different Pt contact deposition

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