Surface preparation of metal films by gas cluster ion beams using organic acid vapor for wafer bonding

Hanahara, Soichi; Toyoda, Noriaki

doi:10.1109/ltb-3d53950.2021.9598403

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2022

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“…We have reported the efficient removal of surface oxide on metal surfaces such as Ni and Cu after Ar-GCIB irradiation with organic acid (acetic acid or acetyl-acetone). 22) The surface reaction on metal surfaces with Ar-GCIB irradiation can be explained as shown in Fig. 1.…”

Section: Introductionmentioning

confidence: 99%

Surface preparation of metal films by gas cluster ion beams using organic acid vapor for Cu–Cu bonding

Hanahara

Takeuchi

Toyoda

2022

Jpn. J. Appl. Phys.

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Surface activated bonding of Cu by gas cluster ion beam (GCIB) irradiation with acetic acid vapor was studied. GCIB irradiation realizes surface smoothing and surface reaction enhancement without severe damage. Therefore, it is promising for surface-activated bonding (SAB). In this study, acetic acid vapor was introduced during Ar-GCIB irradiation to assist removal of surface oxides on Cu surface. XPS results showed that Cu(OH)2 was effectively removed by reaction with adsorbed acetic acid, and there was no residue by acetic acid adsorption. In addition, surface roughness decreased by Ar-GCIB irradiation with acetic acid because of the preferential removal of protrusion. Preliminary bonding experiments showed increase of Cu-Cu bond strength by Ar-GCIB irradiation with acetic acid vapor.

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Section: Introductionmentioning

confidence: 99%