Surface preparation and interfacial stability of high-k dielectrics deposited by atomic layer chemical vapor deposition

Tsai, Wu‐ting; Carter, R. J.; Nohira, Hiroshi; Caymax, Matty; Conard, Thierry; Cosnier, V.; DeGendt, S.; Heyns, Marc; Pétry, J.; Richard, Olivier; Vandervorst, Wilfried; Young, E.; Zhao, Chao; Maes, Jan Willem; Tuominen, M.; Schulte, W.H.; Garfunkel, Eric; Gustafsson, T.

doi:10.1016/s0167-9317(02)00898-5

Cited by 54 publications

(45 citation statements)

References 10 publications

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“…Although the analysis of SE measurements is more straightforward for atomically flat substrates, the roughness of NCD and especially UNCD films is low and regular enough to correct for by introducing an additional layer in the optical model, with intermediate optical properties. 49 The H-terminated Si samples were put under the protective atmosphere of a nitrogen filled glovebox, after a short transportation time (~minutes) in air.…”

Section: Introductionmentioning

confidence: 99%

Structural and Optical Properties of DNA Layers Covalently Attached to Diamond Surfaces

et al. 2008

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Label-free detection of DNA molecules on chemically vapor-deposited diamond surfaces is achieved with spectroscopic ellipsometry in the infrared and vacuum ultra-violet range. This non-destructive method has the potential to yield information on the average orientation of single as well as double stranded DNA molecules, without restricting the strand length to the persistence length. The orientational analysis based on electronic excitations in combination with information from layer thicknesses, provides a deeper understanding of biological layers on diamond. The π-π* transition dipole moments, corresponding to a transition at 4.74 eV, originate from the individual bases. They are in a plane perpendicular to the DNA backbone with an associated n-π* transition at 4.47 eV. For 8-36 bases of single and double stranded DNA covalently attached to ultra-nanocrystalline diamond, the ratio between in-and out-of-plane components in the best fit simulations to the ellipsometric spectra yields an average tilt angle of the DNA backbone with respect to the surface plane ranging from 45° to 52°. 2We comment on the physical meaning of the calculated tilt angles. Additional information is gathered from atomic force microscopy, fluorescence imaging, and wetting experiments. The results reported here are of value in understanding and optimizing the performance of the electronic read-out of a diamond-based label-free DNA hybridization sensor.

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Section: Introductionmentioning

confidence: 99%

Structural and Optical Properties of DNA Layers Covalently Attached to Diamond Surfaces

et al. 2008

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“…We quantify the unpassivated defect density, examine the origin of the Si-db defect, and report on the effects of the pre-deposition nitridation step, which has been shown in a number of dielectrics to improve interface quality above that of ALD grown films on HF-treated substrates, which may result in uneven nucleation and discontinuous films [10]. We also show the effects of post-deposition annealing in forming gas at temperatures from 400 o C to 550 o C.…”

Section: Introductionmentioning

confidence: 99%

Analysis of defects at the interface between high-k thin films and (100) silicon

Jones¹,

Barklie²

2005

Microelectronic Engineering

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“…11 and zirconium oxide on silicon, which show that nitridation of the silicon substrate produces a better quality interface [10,11].…”

Section: Methodsmentioning

confidence: 96%

“…We quantify the unpassivated defect density, examine the origin of the Si-db defect, and report on the effects of a pre-deposition nitridation step -which has been shown in a number of dielectrics to improve interface quality [10,11] above that of ALD grown films on HF-treated substrates, which may result in uneven nucleation and discontinuous films [10,12]. We also show the effects of postdeposition annealing in forming gas.…”

Section: Introductionmentioning

confidence: 99%

Electron paramagnetic resonance evaluation of defects at the (100)Si/Al₂O₃interface

Jones¹,

Barklie

2005

J. Phys. D: Appl. Phys.

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Electron paramagnetic resonance (EPR) was conducted on aluminium oxide films deposited by atomic layer deposition on (100)Si. Multiplet spectra are observed, which can be consistently decomposed assuming the presence of only P b0 and P b1 centres, which are well known in Si/SiO 2 structures. Al 2 O 3 films deposited on HFtreated (100)Si exhibit unpassivated P b0 and P b1 centres, with concentrations of (7.7±1.0)x10 11 cm -2 and (8±3)x10 10 cm -2 respectively. Rapid thermal annealing of the substrate in NH 3 prior to film deposition reduces the unpassivated P b0 concentration to (4.5±0.7)x10 11 cm -2 . Forming gas annealing at temperatures in the range 400 o C to 550 o C causes no further reduction in defect density; this may be related to a spread in passivation activation energy, associated with low temperature deposition.

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Surface preparation and interfacial stability of high-k dielectrics deposited by atomic layer chemical vapor deposition

Cited by 54 publications

References 10 publications

Structural and Optical Properties of DNA Layers Covalently Attached to Diamond Surfaces

Structural and Optical Properties of DNA Layers Covalently Attached to Diamond Surfaces

Analysis of defects at the interface between high-k thin films and (100) silicon

Electron paramagnetic resonance evaluation of defects at the (100)Si/Al₂O₃interface

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Surface preparation and interfacial stability of high-k dielectrics deposited by atomic layer chemical vapor deposition

Cited by 54 publications

References 10 publications

Structural and Optical Properties of DNA Layers Covalently Attached to Diamond Surfaces

Structural and Optical Properties of DNA Layers Covalently Attached to Diamond Surfaces

Analysis of defects at the interface between high-k thin films and (100) silicon

Electron paramagnetic resonance evaluation of defects at the (100)Si/Al2O3interface

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Product

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Electron paramagnetic resonance evaluation of defects at the (100)Si/Al₂O₃interface