Surface potentials of magnetron sputtered transparent conducting oxides

Klein, Andreas; Körber, Christoph; Wachau, André; Säuberlich, F.; Gassenbauer, Yvonne; Schafranek, Robert; Harvey, Steven P.; Mason, Thomas O.

doi:10.1016/j.tsf.2009.05.057

Cited by 145 publications

(144 citation statements)

References 67 publications

Supporting

Mentioning

124

Contrasting

Order By: Relevance

“…6 In both studies, however, the formation energies are severely underestimated leading to pinning values of the Fermi energy well below those experimentally accessible. 17 This would imply, that in contrast to experimental findings, n-type doping is hardly possible especially under more oxygen-rich conditions and that the Fermi level cannot enter into conduction band significantly. If one considers the large formation entropies of acceptor-type defects 18 the situation becomes even worse.…”

Section: Introductionmentioning

confidence: 88%

Limits for n-type doping in In2O3 and SnO2: A theoretical approach by first-principles calculations using hybrid-functional methodology

Ágoston

Körber

Klein

et al. 2010

Journal of Applied Physics

View full text Add to dashboard Cite

The intrinsic n-type doping limits of tin oxide ͑SnO 2 ͒ and indium oxide ͑In 2 O 3 ͒ are predicted on the basis of formation energies calculated by the density-functional theory using the hybrid-functional methodology. The results show that SnO 2 allows for a higher n-type doping level than In 2 O 3 . While n-type doping is intrinsically limited by compensating acceptor defects in In 2 O 3 , the experimentally measured lower conductivities in SnO 2 -related materials are not a result of intrinsic limits. Our results suggest that by using appropriate dopants in SnO 2 higher conductivities similar to In 2 O 3 should be attainable.

show abstract

Section: Introductionmentioning

confidence: 88%

Limits for n-type doping in In2O3 and SnO2: A theoretical approach by first-principles calculations using hybrid-functional methodology

Ágoston

Körber

Klein

et al. 2010

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…Systematic photoemission studies of in situ magnetron sputter deposited ITO films have been carried out by Klein and coworkers, [65][66][67] who also investigated the ITO/ZnPc interface. 66 function.…”

Section: Photoemission Studiesmentioning

confidence: 99%

Influence of the indium tin oxide/organic interface on open-circuit voltage, recombination, and cell degradation in organic small-molecule solar cells

et al. 2011

View full text Add to dashboard Cite

In this paper we investigate the performance and stability of small-molecule organic solar cells with respect to the indium tin oxide (ITO)/organic interface. Different zinc-phthalocyanine (ZnPc)/fullerene (C 60 ) cell architectures with and without ITO O 2 -plasma treatment are compared and tested with respect to their degradation behavior under illumination in inert atmosphere. Photoelectron spectroscopy (UPS and XPS) shows that the O 2 -plasma treatment increases the ITO work function from 4.3 eV up to 5.6 eV. We find that both the increased ITO work function as well as the introduction of an electron blocking layer between ITO and the mixed donor/acceptor layer increases the open-circuit voltage V oc by more than 200 mV. For both cases our continuum approach device simulation quantitatively relates the increase of V oc to a reduced contact recombination and thus a reduced dark current. For cells built on ozone treated ITO we find a fast cell degradation caused by the UV part of the AM 1.5 spectrum. We identify the degradation, which manifests itself in a decrease of V oc of up to 25%, as a partial reversion of the plasma induced ITO work function increase. Additionally, we demonstrate that the degradation can be reduced by structural changes in the cell architecture, leading to improved cell stability. We present a comprehensive study of the recombination at the ITO/organic interface and its influence on the open-circuit voltage and the cell stability.

show abstract

“…The electron affinity seems to vary in the range of A = 4.1...5.0 eV in dependence on the doping concentration (see Ref. 33 and references therein). Together with the measured gap of 3.6 eV, ionization energies of I = 7.7...8.6 eV may be derived.…”

Section: Resultsmentioning

confidence: 99%

Surface Properties of Transparent Conducting Oxides from First Principles: In2O3, SnO2, and ZnO

Höffling

Bechstedt

2012

e-J. Surf. Sci. Nanotechnol.

View full text Add to dashboard Cite

We combine density functional theory and most modern quasiparticle calculations based on many-body perturbation theory to investigate the electronic surface properties of the transparent conducting oxides In2O3, SnO2, and ZnO. We employ an alignment method based on the electrostatic potential to determine the ionization potentials and electron affinities for various surface orientations and terminations. We also calculate surface energies for different surface orientations and terminations of In2O3. We observe a large influence of the surface orientation and surface preparation technique on these fundamental quantities.

show abstract

Surface potentials of magnetron sputtered transparent conducting oxides

Cited by 145 publications

References 67 publications

Limits for n-type doping in In2O3 and SnO2: A theoretical approach by first-principles calculations using hybrid-functional methodology

Limits for n-type doping in In2O3 and SnO2: A theoretical approach by first-principles calculations using hybrid-functional methodology

Influence of the indium tin oxide/organic interface on open-circuit voltage, recombination, and cell degradation in organic small-molecule solar cells

Surface Properties of Transparent Conducting Oxides from First Principles: In<sub>2</sub>O<sub>3</sub>, SnO<sub>2</sub>, and ZnO

Contact Info

Product

Resources

About