Surface potential due to charge accumulation during vacuum ultraviolet exposure for high-k and low-k dielectrics

He, Rong; Sinha, H.; Sehgal, Akshey; Nichols, M. T.; Antonelli, G. A.; Nishi, Yoshio; Shohet, J. L.

doi:10.1063/1.3481079

Cited by 14 publications

(12 citation statements)

References 16 publications

(12 reference statements)

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“…where V surf is the calculated surface potential as a function of photon dose φ, Q(φ) is the charge accumulation, and C eff is the effective capacitance of the dielectric layer obtained from the Kevin probe system [33]. From Figure 4, the calculated and measured surface potentials match well which indicates accurate results for the trapped-charge amount.…”

Section: Resultsmentioning

confidence: 54%

“…Many high-k dielectric materials including HfO 2 , Al 2 O 3 , SiN, SiC, etc. have been extensively studied in our group based on these mechanisms [3,6,9]. These were shown to depend on either direct dielectric charging or charge-induced electric fields within the dielectrics.…”

Section: Introductionmentioning

confidence: 98%

“…For high-k dielectric materials, we have successfully determined the charge-accumulation mechanisms [3] due to plasma exposure, leakage-degradation mechanisms [ 4 , 5 ], defect-state formation mechanisms [ 6 , 7 ] at the semiconductor-dielectric interfacial layer, and chemical and physical modification mechanisms [8]. Many high-k dielectric materials including HfO 2 , Al 2 O 3 , SiN, SiC, etc.…”

Section: Introductionmentioning

confidence: 99%

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Damage to low-k porous organosilicate glass from vacuum-ultraviolet irradiation

Shohet

Sinha

et al. 2011

SPIE Proceedings

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We investigate the effects of VUV and UV radiation on a number of low-k dielectric films. Two different systems were used to investigate the effects: (1) a synchrotron radiation system as a pure VUV radiation source, and (2) an electron-cyclotron resonance (ECR) plasma system as a plasma source (VUV plus ions). Using the synchrotron-radiation system, we find VUV causes trapped charge accumulation within low-k dielectric films by electron depopulation from the defect states. For organosilicate glass (SiCOH) , the defect states were located 1 eV above the valence band of the dielectric. A model was developed to calculate in-situ charge accumulation. Trapped charges can be depleted with UV-lamp exposure. We examined the use of different energy barriers between layers so that less charge will be accumulated. Using the ECR plasma system, the photon effects can be separated from charged particle effects using a capillary-array window to cover the low-k dielectric films so that only photons from plasma can reach the dielectric. Photon fluence from the plasma can be predicted with a model and measured with a VUV monochromator. Photons from the plasma were shown to be responsible for trapped-charge accumulation within the dielectric, while it was found that ions bombardment results primarily on charge on the surface of the dielectrics.

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Section: Resultsmentioning

confidence: 54%

Section: Introductionmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%

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Damage to low-k porous organosilicate glass from vacuum-ultraviolet irradiation

Shohet

Sinha

et al. 2011

SPIE Proceedings

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“…[78] Benefitting from the additional design waveguide integrated in devices, a variety of SPPs photodetectors in terms of fiber waveguide, symmetric/asymmetric metal strip waveguide, double metal strip waveguide based photodetectors with improved performance have been explored. [20,77,[79][80][81][82][83][84] In order to better understand the effects of such SPPs waveguide structure in photodetection, a typical asymmetric structure waveguide Schottky Si photodetector would be demonstrated herein, because the asymmetric structure waveguide is the simplest structure among these devices. As shown in Figure 7b, this asymmetric structure waveguide Schottky Si photodetector is fabricated by thin Au stripes of finite width cladded with asymmetrical dielectric (lightly doped Si and air) to launch SPP.…”

Section: Photodetectors Enhanced By Propagating Surface Plasmonsmentioning

confidence: 99%

Highly Desirable Photodetectors Derived from Versatile Plasmonic Nanostructures

Chen

Jiang

et al. 2017

Adv Funct Materials

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With unique ability to concentrate and manipulate light at nanoscale, surface plasmon resonance technologies create additional opportunities for fabricating superintegration photodetectors with desirable functionalities. To gain an insight into the state-of-the-art of plasmonic photodetectors, recent advances in novel devices as well as potential building blocks are presented herein. The article focuses particularly on understanding the enhancement mechanism of different architectures such as nanoparticles, gratings, waveguides, antennas, and microcavities. Meanwhile, challenges and potential design schemes are proposed in this inspiring field.

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“…16 In steady state, the photoemission/substrate current can be used to obtain the defect density and photoconductivity of the dielectric as follows. Integrating these data over the irradiation time until a steady state is achieved can be used to determine the total number of trapped charges generated by VUV irradiation in the dielectric.…”

Section: Introductionmentioning

confidence: 99%

Effects of vacuum ultraviolet radiation on deposited and ultraviolet-cured low-k porous organosilicate glass

Sinha¹,

Antonelli²,

Jiang³

et al. 2011

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Articles you may be interested inEffects of plasma and vacuum-ultraviolet exposure on the mechanical properties of low-k porous organosilicate glass J. Appl. Phys. 116, 044103 (2014); 10.1063/1.4891501Bandgap measurements of low-k porous organosilicate dielectrics using vacuum ultraviolet irradiation Appl. Phys. Lett. Effect of vacuum ultraviolet and ultraviolet irradiation on mobile charges in the bandgap of low-k -porous organosilicate dielectricsThe authors compare the effects of vacuum ultraviolet ͑VUV͒ irradiation on pristine and UV-cured low-k porous organosilicate glass ͑SiCOH͒. The authors find that during VUV irradiation, more trapped charges are generated in UV-cured SiCOH as compared to pristine SiCOH. VUV is also used as a tool to investigate effects of UV curing. From comparison of VUV spectroscopy and photoinjection current of the two samples, the authors find that UV curing reduces the number of defect states in SiCOH. The authors also find that UV-cured SiCOH has higher photoconductivity and intrinsic conductivity from VUV spectroscopy and trapped-charge decay rate, respectively.

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Surface potential due to charge accumulation during vacuum ultraviolet exposure for high-k and low-k dielectrics

Cited by 14 publications

References 16 publications

Damage to low-k porous organosilicate glass from vacuum-ultraviolet irradiation

Damage to low-k porous organosilicate glass from vacuum-ultraviolet irradiation

Highly Desirable Photodetectors Derived from Versatile Plasmonic Nanostructures

Effects of vacuum ultraviolet radiation on deposited and ultraviolet-cured low-k porous organosilicate glass

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