Surface plasmon-phonon polaritons in GaAs

Graphene’s photonic and optoelectronic properties – A review

“…[10][11][12] We will comment on the results of studies on surface plasmon-phonon polaritons (SPPPs) in doped GaAs, which resulted in the emission of radiation in the THz range. [13] It is noteworthy that SPPPs occur at the interface of two media with dielectric permittivities of different signs. The dispersion relation for SPPPs is given by [14] k 2 SPPP = w c…”

“…Real (solid line) and imaginary (dashed line) parts of n-GaAs dielectric permittivity (from Ref. [13]).…”

“…[17] As we can see in Fig 1, for Re(ε 1 (ω)) < −1, the n-GaAs SPPPs can occur in the ranges between 0 meV and 31.7 meV, and 33.2 meV and 56.9 meV, i.e., for these two energy ranges, there may be surface plasmon-phonon polariton at the n-GaAs/vacuum interface. [13] From Eqs. ( 1) and ( 3) we find the dispersion ratio (SPPP mode energy versus K SPPP , or versus k Ph sin θ +mk G , as shown in Fig.…”

Influence of InP&nbsp;Coupling Cavity on Fano Resonance of Sub Wavelength MIM&nbsp;Waveguide

“…During the process of light propagation in the nano-photonic circuits, MIM waveguides could reduce energy loss. The MIM waveguide with coupling cavity introduced into could change its ltering performance of electromagnetic wave [6][7][8][9] , such as Fano resonance. The most common structures of the plasmonic lters were MIM waveguides coupled with a rectangular cavity [10][11][12] .…”

Influence of InP coupling cavity on Fano resonance of sub wavelength MIM waveguide

“…During the process of light propagation in the nano-photonic circuits, MIM waveguides could reduce energy loss. The MIM waveguide with coupling cavity could change its filtering performance 6 – 9 , such as Fano resonance. The most common structures with the filters were MIM waveguides with a rectangular cavity 10 – 14 .…”