Surface plasmon induced direct detection of long wavelength photons

Tong, Jianhua; Zhou, Wei; Qu, Yue; Xu, Zhengji; Huang, Zhiming; Zhang, Dao Hua

doi:10.1038/s41467-017-01828-2

Cited by 55 publications

(52 citation statements)

References 56 publications

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“…For our detectors, the main noises contributing to our detector include the shot noise (SN) and the Johnson–Nyquist (JN). The total noise can be described by

{NEP}^{2} = {NEP}_{SN}^{2} + {NEP}_{JN}^{2} = (4 k_{normalB} T r + 2 q I_{normald} r^{2}) / R^{2}

, where k B , T , r , q are the Boltzmann's constant, the operation temperature of the detector, the resistance of the device and the elementary charge, respectively. I d and R are the dark current and the current responsivity, respectively.…”

Section: Methodsmentioning

confidence: 99%

Ultrasensitive Room‐Temperature Terahertz Direct Detection Based on a Bismuth Selenide Topological Insulator

Tang

Politano

Guo

et al. 2018

Adv Funct Materials

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Despite their huge application capabilities, millimeter-and terahertzwave photodetectors still face challenges in the detection scheme. Topological insulators (TIs) are predicted to be promising candidates for long-wavelength photodetection, due to the presence of Dirac fermions in their topologically protected surface states. However, photodetection based on TIs is usually hindered by the large dark current, originating from the mixing of bulk states with topological surface states (TSSs) in most realistic samples of TIs. Here millimeter and terahertz detectors based on a subwavelength metal-TI-metal (MTM) heterostructure are demonstrated. The achieved photoresponse stems from the asymmetric scattering of TSS, driven by the localized surface plasmon-induced terahertz field, which ultimately produces direct photocarriers beyond the interband limit. The device enables high responsivity in both the self-powered and bias modes even at room temperature. The achieved responsivity is over 75 A/W, with response time shorter than 60 ms in the self-powered mode. Remarkably, the responsivity increases by several orders of magnitude in the biased configuration, with the noise-equivalent power (NEP) of 3.6 × 10 −13 W Hz −1/2 and a detectivity of 2.17 × 10 11 cm Hz −1/2 W −1 at room temperature. The detection performances open a way toward realistic exploitation of TIs for large-area, real-time imaging within long-wavelength optoelectronics.

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“…For our detectors, the main noises contributing to our detector include the shot noise (SN) and the Johnson–Nyquist (JN). The total noise can be described by

{NEP}^{2} = {NEP}_{SN}^{2} + {NEP}_{JN}^{2} = (4 k_{normalB} T r + 2 q I_{normald} r^{2}) / R^{2}

Section: Methodsmentioning

confidence: 99%

Ultrasensitive Room‐Temperature Terahertz Direct Detection Based on a Bismuth Selenide Topological Insulator

Tang

Politano

Guo

et al. 2018

Adv Funct Materials

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“…where ε 0 and ε ∞ are the vacuum permittivity and high-frequency permittivity, respectively, ω is the angular frequency, γ is the damping constant, e is the electron charge, m eff is the effective mass of a free carrier and N is the intrinsic carrier density, which can be written as [30] N cm −3 = (2400 − T)…”

Section: Basic Considerationsmentioning

confidence: 99%

“…The indium antimonide (InSb) is selected for the semiconductor material because it possesses a large electron density and narrow energy gap. The permittivity of InSb ( ε InSb ) is described by the Drude model [ 29 ]

where

and

are the vacuum permittivity and high-frequency permittivity, respectively, ω is the angular frequency, γ is the damping constant, e is the electron charge, m eff is the effective mass of a free carrier and N is the intrinsic carrier density, which can be written as [ 30 ]

where T and K B are the operating temperature and Boltzmann constant, respectively. In the following discussions, the parameters of the Drude model for InSb are set as

= 15.68, γ = 0.1p THz and m eff = 0.015 m e (where m e is the mass of electron).…”

Section: Basic Considerationsmentioning

confidence: 99%

Bragg-Mirror-Assisted High-Contrast Plasmonic Interferometers: Concept and Potential in Terahertz Sensing

Han

et al. 2020

Nanomaterials

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A Bragg-mirror-assisted terahertz (THz) high-contrast and broadband plasmonic interferometer is proposed and theoretically investigated for potential sensing applications. The central microslit couples the incident THz wave into unidirectional surface plasmon polaritons (SPPs) waves travelling to the bilateral Bragg gratings, where they are totally reflected over a wide wavelength range back towards the microslit. The properties of interference between the SPPs waves and transmitted THz wave are highly dependent on the surrounding material, offering a flexible approach for the realization of refractive index (RI) detection. The systematic study reveals that the proposed interferometric sensor possesses wavelength sensitivity as high as 167 μm RIU−1 (RIU: RI unit). More importantly, based on the intensity interrogation method, an ultrahigh Figure-of-Merit (FoM) of 18,750% RIU−1, surpassing that of previous plasmonic sensors, is obtained due to the high-contrast of interference pattern. The results also demonstrated that the proposed sensors are also quite robust against the oblique illumination. It is foreseen the proposed configuration may open up new horizons in developing THz plasmonic sensing platforms and next-generation integrated THz circuits.

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“…There is another unique property of surface plasmons that should be mentioned here as it has been widely studied for photoelectrical conversion, especially for solar cells. This method is based on the decay of surface plasmons, which can induce electron-hole pairs 24 or nonequilibrium electrons 25 in the metals or in semiconductors. The high energy electrons can contribute to photocurrent with appropriate architecture design.…”

Section: Surface Plasmonmentioning

confidence: 99%

Surface plasmon enhanced infrared photodetection

Tong

Suo

et al. 2019

Opto-Electronic Advances

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Infrared photodetectors have been used extensively in biomedicine, surveillance, communication and astronomy. However, state of the art technology based on III-V and II-VI compounds still lacks excellent performance for high-temperature operation. Surface plasmon polaritons (SPPs) have demonstrated their capability in improving the light detection from visible to infrared wave range due to their light confinement in subwavelength scale. Advanced fabrication techniques such as electron-beam lithography (EBL) and focused ion-beam (FIB), and commercially available numerical design tool like Finite-Difference Time-Domain (FDTD) have enabled rapid development of surface plasmon (SP) enhanced photodetectors. In this review article, the basic mechanisms behind the SP-enhanced photodetection, the different type of plasmonic nanostructures utilized for enhancement, and the reported SP-enhanced infrared photodetectors will be discussed.

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Surface plasmon induced direct detection of long wavelength photons

Cited by 55 publications

References 56 publications

Ultrasensitive Room‐Temperature Terahertz Direct Detection Based on a Bismuth Selenide Topological Insulator

Ultrasensitive Room‐Temperature Terahertz Direct Detection Based on a Bismuth Selenide Topological Insulator

Bragg-Mirror-Assisted High-Contrast Plasmonic Interferometers: Concept and Potential in Terahertz Sensing

Surface plasmon enhanced infrared photodetection

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