Surface plasmon-enhanced photoluminescence from a single quantum well

Hecker, N. E.; Höpfel, R. A.; Sawaki, Nobuhiko; Maier, Thomas; Strasser, G.

doi:10.1063/1.124759

Cited by 111 publications

(62 citation statements)

References 5 publications

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“…This finding is very important since it shows that if one is to extract the power lost to the SPP modes of structures such as those considered here it is the SPP associated with the metal/organic interface upon which our attention should be focussed, not the SPP associated with the metal/air interface; it is this latter mode which has more frequently been investigated in the past. 15,16,19,20 We can extend the value of such calculations by integrating the area under each peak in the power dissipation spectrum. By so doing we can determine the power coupled to each mode as a fraction of the total power radiated by the emitter.…”

Section: ͑2͒mentioning

confidence: 99%

“…In the context of the work reported here the question of whether such enhanced transmission requires an array of holes or can be accomplished with just a periodically modulated film is of particular interest. 14 Several authors have explored the possibility of using periodically modulated metal films to extract light from surface plasmon polariton modes, [15][16][17][18][19][20] though only Gifford and Hall 6,21 have so far reported experimental results specifically to look at surface plasmon polariton cross coupling as a means of extracting light from such structures.…”

Section: Introductionmentioning

confidence: 99%

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Light emission through a corrugated metal film: The role of cross-coupled surface plasmon polaritons

et al. 2004

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We examine the phenomenon of light emission through a thin metal film that takes place via surface plasmon polaritons. Surface plasmon polariton cross coupling has recently been invoked to explain sharp features observed in the angle dependent emission spectra obtained from surface-emitting (through cathode) organic light-emitting diode structures. We investigated whether such a cross-coupling process is needed to explain such observations. We undertook measurements on samples for a variety of metal film thicknesses. Our results are consistent with the mechanism of surface plasmon polariton cross coupling but also show that the processes underlying the emission from such structures can be rather subtle.

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Section: ͑2͒mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Light emission through a corrugated metal film: The role of cross-coupled surface plasmon polaritons

et al. 2004

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“…Surface plasmon polaritons are electromagnetic excitations associated with charge density waves on the surface of a conducting object. The tight confinement of the electromagnetic field to the metal-dielectric interface due to the boundary condition constraints gives the possibility of inventing new ways to enhance light-matter interaction, such as efficient single optical plasmon generation, 10,11 single molecule detection with surface-enhanced Raman scattering, 12,13 enhanced photoluminescence from quantum wells, 14 and nanoantenna modified spontaneous emission. [15][16][17] Although limited by the intrinsic losses of the metals in the optical frequency range, different metallic structures have been extensively studied in the last few years due to the possibilities of integration and miniaturization.…”

Section: Introductionmentioning

confidence: 99%

Finite-element modeling of spontaneous emission of a quantum emitter at nanoscale proximity to plasmonic waveguides

et al. 2010

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We develop a self-consistent finite element method to study spontaneous emission at nanoscale proximity of plasmonic waveguides. In the model, it is assumed that only one guided mode is dominatingly excited by the quantum emitter. With such one dominating mode assumption, the cross section of the plasmonic waveguide can be arbitrary. We apply our numerical method to calculate the coupling of a quantum emitter to a cylindrical nanowire and a rectangular waveguide, and compare the cylindrical nanowire to previous work valid in quasistatic approximation. The fraction of the energy coupled to the plasmonic mode can be calculated exactly, which can be used to determine the single optical plasmon generation efficiency for a quantum emitter. For a gold nanowire we observe agreement with the quasistatic approximation for radii below 20 nm, but for larger radii the total decay rate is up to 10 times larger. For the rectangular waveguide we estimate an optimized value for the spontaneous emission factor β of up to 80%.

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“…3 Recently, we have reported a method for enhancing the light emission efficiency from InGaN QWs by controlling the energy transfer between QW emitters and surface plasmons ͑SPs͒. 4 The idea of SP enhanced light emission was previously described [5][6][7][8][9][10][11][12][13][14][15] and efficient SPenhanced visible light emission has been demonstrated. 4 Moreover, the enhancement of an emission rate is also very important for the development of communication technology and optical computing.…”

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confidence: 99%

Surface plasmon enhanced spontaneous emission rate of InGaN∕GaN quantum wells probed by time-resolved photoluminescence spectroscopy

Okamoto

Niki

Scherer

et al. 2005

Applied Physics Letters

358

244

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We observed a 32-fold increase in the spontaneous emission rate of InGaN/GaN quantum well ͑QW͒ at 440 nm by employing surface plasmons ͑SPs͒ probed by time-resolved photoluminescence spectroscopy. We explore this remarkable enhancement of the emission rates and intensities resulting from the efficient energy transfer from electron-hole pair recombination in the QW to electron vibrations of SPs at the metal-coated surface of the semiconductor heterostructure. This QW-SP coupling is expected to lead to a new class of super bright and high-speed light-emitting diodes ͑LEDs͒ that offer realistic alternatives to conventional fluorescent tubes. © 2005 American Institute of Physics. ͓DOI: 10.1063/1.2010602͔Currently, InGaN-GaN quantum well ͑QW͒ based lightemitting diodes ͑LEDs͒ have been developed and expected to eventually replace more traditional fluorescent tubes as illumination sources. 1,2 However, the emission efficacy of commercial white LEDs is still substantially lower than that of fluorescent tubes. 3 Recently, we have reported a method for enhancing the light emission efficiency from InGaN QWs by controlling the energy transfer between QW emitters and surface plasmons ͑SPs͒. 4 The idea of SP enhanced light emission was previously described 5-15 and efficient SPenhanced visible light emission has been demonstrated. 4 Moreover, the enhancement of an emission rate is also very important for the development of communication technology and optical computing. However, spontaneous emission rates of InGaN-GaN QWs are usually reduced by the carrier localization effect 16,17 and the quantum confinement Stark effect, 18,19 and very difficult to enhance. There are only a few reports on the enhancement of the emission rates by reducing the piezo-electric field 20 and making photonic crystal structure. 21 We believe that our developed SP coupling technique has the potential to enhance the spontaneous emission rate dramatically. 4 Since the density of states of SP mode is much larger, the QW-SP coupling rate should be very fast, and this new path of a recombination can increase the spontaneous emission rate. However, clear evidence for fast rate of QW-SP coupling has not so far been reported on the SP enhanced emission. We investigate the direct observation of SP coupled spontaneous emission rate by using the timeresolved photoluminescence ͑PL͒ measurements here. Moreover, we consider the mechanisms and dynamics of energy transfer and light extraction. This study should also be very useful for further optimization of the QW-SP coupling condition and for designing even more efficient device structures.InGaN-GaN QW wafers were grown on 0001 oriented sapphire substrates by metal-organic chemical vapor deposition ͑MOCVD͒. The grown structures consist of a GaN ͑4 m͒ buffer layer, an InGaN SQW ͑3 nm͒ followed by a GaN cap layer ͑10 nm͒. A 50 nm thick silver layer was then evaporated on top of the wafer surface. To perform timeresolved PL measurements, the frequency doubled output from a mode-locked Ti: Al 2 O 3 laser was used to...

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Surface plasmon-enhanced photoluminescence from a single quantum well

Cited by 111 publications

References 5 publications

Light emission through a corrugated metal film: The role of cross-coupled surface plasmon polaritons

Light emission through a corrugated metal film: The role of cross-coupled surface plasmon polaritons

Finite-element modeling of spontaneous emission of a quantum emitter at nanoscale proximity to plasmonic waveguides

Surface plasmon enhanced spontaneous emission rate of InGaN∕GaN quantum wells probed by time-resolved photoluminescence spectroscopy

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