2011
DOI: 10.1021/nl2022459
|View full text |Cite
|
Sign up to set email alerts
|

Surface Plasmon-Driven Hot Electron Flow Probed with Metal-Semiconductor Nanodiodes

Abstract: A continuous flow of hot electrons that are not at thermal equilibrium with the surrounding metal atoms is generated by the absorption of photons. Here we show that hot electron flow generated on a gold thin film by photon absorption (or internal photoemission) is amplified by localized surface plasmon resonance. This was achieved by direct measurement of photocurrent on a chemically modified gold thin film of metal-semiconductor (TiO(2)) Schottky diodes. The short-circuit photocurrent obtained with low-energy… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1

Citation Types

7
276
1
3

Year Published

2013
2013
2021
2021

Publication Types

Select...
9
1

Relationship

1
9

Authors

Journals

citations
Cited by 275 publications
(291 citation statements)
references
References 31 publications
7
276
1
3
Order By: Relevance
“…(1) predicts an increasing quantum yield at higher photon energy. Many recently demonstrated hot electron photodetectors based on Schottky barriers have been shown to follow this model [44,48,66]. Compared to electron-hole generation and separation in a semiconductor, the internal photoemission over a bulk metal/semiconductor Schottky junction is a very inefficient process.…”
Section: Internal Photoemissionmentioning
confidence: 99%
“…(1) predicts an increasing quantum yield at higher photon energy. Many recently demonstrated hot electron photodetectors based on Schottky barriers have been shown to follow this model [44,48,66]. Compared to electron-hole generation and separation in a semiconductor, the internal photoemission over a bulk metal/semiconductor Schottky junction is a very inefficient process.…”
Section: Internal Photoemissionmentioning
confidence: 99%
“…18,[23][24][25] To this end, metal-semiconductor (MS) Schottky junctions have been employed, 11,12,26 that take advantage of the built-in field in the vicinity of the metal nanostructure to separate the photogenerated carriers. The use of metalinsulator-metal architectures was also successfully employed for hot-electron photodetection.…”
Section: Introductionmentioning
confidence: 99%
“…[15][16][17][18][19] Therefore, it is understood that metallic nanostructures act as photoelectric conversion systems that enable the effective utilization of photons, having a role similar to that of chlorophyll in photosynthesis. [20][21][22][23] Although many photoelectric conversion systems using LSPR have been previously reported, the wavelengths at which photoelectric conversion occurs did not extend beyond 700 nm, [24][25][26][27][28][29][30][31] creating a need to explore photoelectric conversion at infrared wavelengths past 800 nm.…”
Section: Introductionmentioning
confidence: 99%