Surface plasmon coupled light-emitting diode with metal protrusions into p-GaN

Chen, Horng-Shyang; Chen, Chia-Feng; Kuo, Yao‐Haur; Chou, Wang-Hsien; Shen, Ching-Hsing; Jung, Yu-Lung; Kiang, Yean‐Woei; Yang, C. C.

doi:10.1063/1.4789995

Cited by 60 publications

(32 citation statements)

References 15 publications

(20 reference statements)

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“…SP coupling has been widely used for enhancing the emission of a light emitter of intrinsically low efficiency. In particular, the application of SP coupling to an InGaN/GaN quantum well (QW) light-emitting diode (LED) for enhancing the emission efficiency has been widely studied [2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18]. Although the SP involvement for radiation can also produce energy loss through metal dissipation [19], as long as this loss rate is smaller than the intrinsic nonradiative recombination rate in the QW, the SP coupling process can help in enhancing the overall emission efficiency of an LED.…”

Section: Introductionmentioning

confidence: 99%

“…In principle, beyond a certain distance to avoid the electron transport process, which usually leads to a quenching effect, a shorter distance results in a stronger SP coupling process. However, device fabrication for implementing a structure of a short distance between the metal and the QW can be quite difficult [18]. Therefore, the understanding of the distance dependence of the SP coupling effect is particularly important for implementing a practically useful SP-coupled LED.…”

Section: Introductionmentioning

confidence: 99%

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Surface-plasmon-coupled emission enhancement of a quantum well with a metal nanoparticle embedded in a light-emitting diode

et al. 2013

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The coupling behavior of an InGaN/GaN quantum well (QW), which is assumed to consist of an array of radiating dipoles, with the induced localized surface plasmon (LSP) resonance on an Ag nanosphere (NS) embedded in the p-type layer of a nitride light-emitting diode is demonstrated. The numerical study of the coupling behavior of an individual radiating dipole is based on an algorithm, which takes account of the induction of LSP resonance on the Ag NS by the radiating dipole and the feedback of the LSP resonance to the behavior of the radiating dipole. In this study, we first evaluate the enhancements of dipole strength and radiated power in such a coupling process for the dipoles oriented along the radial and orbital directions with respect to the Ag NS under the conditions of different distances between the radiating dipole and Ag NS. Then, the QW coupling effect is obtained through the superposition of those of the individual dipoles in the array. It is found that both the LSP dipole resonance and higher-order resonance can contribute significant radiated power enhancements to the QW-LSP coupling system.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Surface-plasmon-coupled emission enhancement of a quantum well with a metal nanoparticle embedded in a light-emitting diode

et al. 2013

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“…Recently, surface plasmon (SP) coupling have drawn a lot of attention, since it can effectively enhance the IQE by offer an extra emission channel [8][9][10]. To achieve high performance SP-LEDs, one of the most important key points is to get close-distance coupling between surface plasmon and the QWs.…”

Section: Introductionmentioning

confidence: 99%

“…However, as the emission wavelength approaches to the green light region, the internal quantum efficiency (IQE) suffers an obvious loss due to poor crystal quality [2], serious quantum confined stark effect (QCSE) [3] and efficiency droop [4]. Various methods have been proposed to address the above issues [5][6][7].Recently, surface plasmon (SP) coupling have drawn a lot of attention, since it can effectively enhance the IQE by offer an extra emission channel [8][9][10]. To achieve high performance SP-LEDs, one of the most important key points is to get close-distance coupling between surface plasmon and the QWs.…”

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confidence: 99%

The diffusion of Ag in GaN-based surface plasmon light-emitting diodes under different temperature annealing

Liu

Zhao

et al. 2014

2014 11th China International Forum on Solid State Lighting (SSLCHINA)

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In order to achieve effective coupling between the surface plasmon and the quantum wells (QWs) for surface plasmon LEDs, metal-embedded or thin p-GaN layer approach have been normally been used, but by taking either of these methods, the enhancement of the IQE of the fabricated SPLEDs is not remarkable, in some cases, the internal quantum efficiency even decreases. Here, this study is to clarify the origin and understand what kind of influence of temperature treatment to the LED structure. GaN based LEDs with Ag from the same epitaxial wafer were annealed under different temperatures to imitate the high temperature treatment during the SP-LED fabrication. The results show that the diffusion of Ag into the quantum wells could be one of the reasons and in order to realize SP-LEDs with high IQE, high temperature treatments need to be avoided to prevent the diffusion of metal. I. IntroductionGaN-based light-emitting diodes (LEDs) have become as a promising candidate for next generation high-brightness solidstate lighting because of many advantages, such as energy saving and environment friendly [1], and with different indium composition, it can cover the UV to longer-wavelength spectral region. However, as the emission wavelength approaches to the green light region, the internal quantum efficiency (IQE) suffers an obvious loss due to poor crystal quality [2], serious quantum confined stark effect (QCSE) [3] and efficiency droop [4]. Various methods have been proposed to address the above issues [5][6][7].Recently, surface plasmon (SP) coupling have drawn a lot of attention, since it can effectively enhance the IQE by offer an extra emission channel [8][9][10]. To achieve high performance SP-LEDs, one of the most important key points is to get close-distance coupling between surface plasmon and the QWs. In order to realize the close-distance coupling, it has been reported to use metal-embedded or thin p-GaN layer approach [11][12][13][14][15]. However, by taking either of two methods above, the enhancement of the IQE of the fabricated SP-LEDs is not remarkable. In some cases, the IQE even decreases. The reason could be related to the material degeneration, which is caused by the metal diffusion during the regrowth or the thermal treatment in the thin p-GaN layer method. Here, the aim of this study is to clarify the origin and understand what kind of influence of temperature treatment to the LED structure.Similar LED samples from the same wafer were annealed under different temperature to imitate the high temperature treatments during the SP-LED fabrication. Photoluminescence (PL) measurements were before and after the temperature treatments using 325nm He-Cd laser irradiation. Secondary ion mass spectrometry (SIMS) depth profile was performed to acquire the diffusion degree of the metal. In Sec. II of this paper, fabrication procedure and characterization results of the LED samples are presented, and discussions are provided. In Sec. III conclusions and summary are drawn. Figure 1 illustrates the procedure flow chart...

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“…The ultraviolet, blue, and green LEDs with SP-coupling have been reported with the improved internal quantum efficiency. 1,2,[4][5][6][7][8] In these reports, metal nano-structures (NS) are used for the effective SP coupling with nitride-based quantum well (QW) and radiation of the SP polariton (SPP) or localized SP (LSP). Thus, the metal nano-structures 9 are very important to enhance the emission efficiency of SP-coupling LED.…”

Section: Introductionmentioning

confidence: 99%

Investigation of surface-plasmon coupled red light emitting InGaN/GaN multi-quantum well with Ag nanostructures coated on GaN surface

Liu

Zhang

et al. 2015

Journal of Applied Physics

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Surface-plasmon (SP) coupled red light emitting InGaN/GaN multiple quantum well (MQW) structure is fabricated and investigated. The centre wavelength of 5-period InGaN/GaN MQW structure is about 620 nm. The intensity of photoluminescence (PL) for InGaN QW with naked Ag nano-structures (NS) is only slightly increased due to the oxidation of Ag NS as compared to that for the InGaN QW. However, InGaN QW with Ag NS/SiO 2 structure can evidently enhance the emission efficiency due to the elimination of surface oxide layer of Ag NS. With increasing the laser excitation power, the PL intensity is enhanced by 25%-53% as compared to that for the SiO 2 coating InGaN QW. The steady-state electric field distribution obtained by the three-dimensional finite-difference time-domain method is different for both structures. The proportion of the field distributed in the Ag NS for the GaN/Ag NS/SiO 2 structure is smaller as compared to that for the GaN/naked Ag NS structure. As a result, the energy loss of localized SP modes for the GaN/naked Ag NS structure will be larger due to the absorption of Ag layer. V C 2015 AIP Publishing LLC.

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Surface plasmon coupled light-emitting diode with metal protrusions into p-GaN

Cited by 60 publications

References 15 publications

Surface-plasmon-coupled emission enhancement of a quantum well with a metal nanoparticle embedded in a light-emitting diode

Surface-plasmon-coupled emission enhancement of a quantum well with a metal nanoparticle embedded in a light-emitting diode

The diffusion of Ag in GaN-based surface plasmon light-emitting diodes under different temperature annealing

Investigation of surface-plasmon coupled red light emitting InGaN/GaN multi-quantum well with Ag nanostructures coated on GaN surface

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