2009
DOI: 10.1016/j.mejo.2008.07.048
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Surface planarization of ZnO thin film for optoelectronic applications

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Cited by 10 publications
(3 citation statements)
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“…We adopted CMP to flatten the ZnO FSCW, and the schematic illustration of the CMP mechanism is shown in Figure e. CMP is a standard process, composed of a carrier head, a polishing pad, and a rotating and slurry feeding mechanism, applied in the planarization of silicon-based integrated circuits . During optimization of the CMP process for the ZnO FSCW, the conditions of low pressure and high rotating speed were chosen to enhance the polishing stability and reduce the quality deviation at a relatively low removal rate.…”
Section: Results and Discussionsupporting
confidence: 85%
See 1 more Smart Citation
“…We adopted CMP to flatten the ZnO FSCW, and the schematic illustration of the CMP mechanism is shown in Figure e. CMP is a standard process, composed of a carrier head, a polishing pad, and a rotating and slurry feeding mechanism, applied in the planarization of silicon-based integrated circuits . During optimization of the CMP process for the ZnO FSCW, the conditions of low pressure and high rotating speed were chosen to enhance the polishing stability and reduce the quality deviation at a relatively low removal rate.…”
Section: Results and Discussionsupporting
confidence: 85%
“…CMP is a standard process, composed of a carrier head, a polishing pad, and a rotating and slurry feeding mechanism, applied in the planarization of silicon-based integrated circuits. 32 During optimization of the CMP process for the ZnO FSCW, the conditions of low pressure and high rotating speed were chosen to enhance the polishing stability and reduce the quality deviation at a relatively low removal rate. The as-grown ZnO FSCW has an average roughness of 24 nm through the coherence correlation interferometry (CCI) measurement.…”
Section: ■ Results and Discussionmentioning
confidence: 99%
“…This technique yielded optimal conditions of high removal rate, low resistivity, and high transmittance using the chemical mechanical polishing process [20]. Additionally, Lee and Gupta's research indicated that CMP resulted in increased surface uniformity and improved transmittance of ITO thin films [21,22]. Li et al confirmed that chemical polishing of a film can reduce film surface roughness, surface defects, and leakage current and improve photoelectric properties [23].…”
Section: Introductionmentioning
confidence: 98%