Abstract:The properties of GaAsSbN and GaAsSb layers grown by liquid-phase epitaxy on n-GaAs substrates were investigated in a comparative plan with a view of their possible application in multi-junction solar cells. To avoid non-uniformity effects in the composition of these compounds with two or three different group-V volatile elements, the crystallization was carried out from finite melt with a thickness of 0.5 mm at low (<560 °C) temperatures. X-ray microanalysis and X-ray diffraction were used to determine the… Show more
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