Surface photovoltage spectroscopy study of InAs quantum dot in quantum well multilayer structures for infrared photodetectors

Ivanov, Ts.; Ivanova, Ts.; Mathews, Sen; Kim, J.O.; Krishna, S.

doi:10.1016/j.spmi.2015.10.036

Cited by 8 publications

(3 citation statements)

References 21 publications

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“…Otherwise, a similar characteristic feature above 1.35 eV has been observed by means of surface PV spectroscopy in a recent detailed study of p -doped InAs/GaAs QD and InAs/InGaAs dot-in-well structures based on si -GaAs substrates [ 58 ]. The drastic fall of the PV amplitude has been explained, unlike in our case, by different charge carriers generated below and above 1.35 eV.…”

Section: Resultssupporting

confidence: 67%

“…2 b in the spectrum of the pseudomorphic sample contacted to the MBE buffers, though a drastic fall of the signal like in metamorphic structure should be expected above 1.36 eV, taking into account a similar band bending near n + -GaAs/substrate interface. Such a feature is not an attribute of only substrate and n + -doped GaAs; such transitions were detected in In(Ga)As/GaAs QD structures based on p -doped [ 58 ] and undoped GaAs [ 10 , 55 ]. These transitions obviously occur also in upper GaAs layers of our pseudomorphic structure, compensating mostly the negative effect of the near-substrate layers on the PV signal.…”

Section: Resultsmentioning

confidence: 99%

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Bipolar Effects in Photovoltage of Metamorphic InAs/InGaAs/GaAs Quantum Dot Heterostructures: Characterization and Design Solutions for Light-Sensitive Devices

et al. 2017

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The bipolar effect of GaAs substrate and nearby layers on photovoltage of vertical metamorphic InAs/InGaAs in comparison with pseudomorphic (conventional) InAs/GaAs quantum dot (QD) structures were studied. Both metamorphic and pseudomorphic structures were grown by molecular beam epitaxy, using bottom contacts at either the grown n +-buffers or the GaAs substrate. The features related to QDs, wetting layers, and buffers have been identified in the photoelectric spectra of both the buffer-contacted structures, whereas the spectra of substrate-contacted samples showed the additional onset attributed to EL2 defect centers. The substrate-contacted samples demonstrated bipolar photovoltage; this was suggested to take place as a result of the competition between components related to QDs and their cladding layers with the substrate-related defects and deepest grown layer. No direct substrate effects were found in the spectra of the buffer-contacted structures. However, a notable negative influence of the n +-GaAs buffer layer on the photovoltage and photoconductivity signal was observed in the InAs/InGaAs structure. Analyzing the obtained results and the performed calculations, we have been able to provide insights on the design of metamorphic QD structures, which can be useful for the development of novel efficient photonic devices.

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Section: Resultssupporting

confidence: 67%

Section: Resultsmentioning

confidence: 99%

Bipolar Effects in Photovoltage of Metamorphic InAs/InGaAs/GaAs Quantum Dot Heterostructures: Characterization and Design Solutions for Light-Sensitive Devices

et al. 2017

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“…SPV spectroscopy has been widely used in the characterization of bulk materials and various nanostructures. − However, there are relatively few reports in the literature on SPV investigation of SiNWs. SPV spectroscopy was used to study the bandgap of vapor–liquid–solid (VLS)-grown undoped SiNWs and SiNWs doped with P and B, and to conclude on the NW crystal structurewurtzite or diamond .…”

Section: Introductionmentioning

confidence: 99%

Effective Removal of Surface Recombination Centers in Silicon Nanowires Fabricated by Metal-Assisted Chemical Etching

Georgiev

Leontis

Nassiopoulou

2018

ACS Appl. Energy Mater.

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High-density silicon nanowires (SiNWs) were fabricated on p-Si substrates by metal-assisted chemical etching (MACE). A chemical cleaning with HF/piranha/HF was used to remove structural defects from the nanowire surface which are at the origin of surface recombination states. Surface photovoltage (SPV) spectroscopy, capacitance− voltage (C−V), and conductance measurements were used to study the SiNW properties and assess the effectiveness of the cleaning process. For the as-grown samples, the analysis of the SPV amplitude and phase spectra demonstrated high density of positively charged surface recombination centers. These centers increase the surface band bending and decrease the minority carrier lifetime and diffusion length. Si nanostructures at the SiNW surface introduce slow traps, as evidenced by the frequency dispersion at accumulation of the C−V curves and the increase of the diffusion length with frequency. All these features are effectively reduced when the SiNWs are subjected to HF/piranha/HF chemical cleaning. Thus, a cheap and effective way is demonstrated to reduce the surface state density and improve the electronic quality of the surface of SiNWs.

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Surface Photo-Voltage Spectroscopy: A Versatile Technique to Probe Semiconductor Materials and Devices

Jariwala

Toshniwal

Kheraj

2021

Progress in Optical Science and Photonics

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Surface photovoltage spectroscopy study of InAs quantum dot in quantum well multilayer structures for infrared photodetectors

Cited by 8 publications

References 21 publications

Bipolar Effects in Photovoltage of Metamorphic InAs/InGaAs/GaAs Quantum Dot Heterostructures: Characterization and Design Solutions for Light-Sensitive Devices

Bipolar Effects in Photovoltage of Metamorphic InAs/InGaAs/GaAs Quantum Dot Heterostructures: Characterization and Design Solutions for Light-Sensitive Devices

Effective Removal of Surface Recombination Centers in Silicon Nanowires Fabricated by Metal-Assisted Chemical Etching

Surface Photo-Voltage Spectroscopy: A Versatile Technique to Probe Semiconductor Materials and Devices

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