Surface photovoltage spectroscopy of metamorphic high electron mobility transistor structures

Abstract

Suppression of surface segregation of silicon dopants during molecular beam epitaxy of ( 411 ) A In 0.75 Ga 0.25 As ∕ In 0.52 Al 0.48 As pseudomorphic high electron mobility transistor structures

Influence of adsorbed oxygen on the surface photovoltage and photoluminescence of ZnO nanorods

“…Therefore, the formation of an SPV signal is determined by the fundamental properties of light absorption and transport of excess carriers in a semiconducting material [20][21][22][23]. It has been utilized as an extensive source of surface and bulk information on various semiconductors and semiconductors interface [24][25][26][27]. Therefore, SPS and FISPS are effective tools to investigate the influence of gas adsorption on the properties of surface charge transfer of ZnO nanoparticles.…”

Contactless Method to Measure 2DEG Charge Density and Band Structure in HEMT Structures

“…8 Nonetheless, it has been shown that surface photovoltage spectroscopy (SPS) could still be used successfully to this end when augmented with numerical simulations. 9,10,11 In most of the practical cases, however, developers of heterostructure devices rely on simulations alone, with their only feedback coming from electrical characterization of fully fabricated devices. 12,13,14 Here, we present a fully empirical method that does not require simulations.…”