Surface photovoltage spectroscopy of epitaxial structures for high electron mobility transistors

Solodky, S.; Khramtsov, A.; Baksht, Tamara; Leibovitch, M.; Hava, S.; Shapira, Yoram

doi:10.1063/1.1613794

Cited by 8 publications

(4 citation statements)

References 18 publications

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“…Therefore, the formation of an SPV signal is determined by the fundamental properties of light absorption and transport of excess carriers in a semiconducting material [20][21][22][23]. It has been utilized as an extensive source of surface and bulk information on various semiconductors and semiconductors interface [24][25][26][27]. Therefore, SPS and FISPS are effective tools to investigate the influence of gas adsorption on the properties of surface charge transfer of ZnO nanoparticles.…”

mentioning

confidence: 99%

Influence of adsorbed oxygen on the surface photovoltage and photoluminescence of ZnO nanorods

Lin¹,

Wang²,

Zhao³

et al. 2006

Nanotechnology

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ZnO nanorods have been prepared with sol–gel methods using zinc acetate dihydrate in ethanol in the presence of lithium hydroxide via alkaline hydrolysis. The electron transfer behaviour at the surface and interface in ZnO nanorods was investigated by means of the surface photovoltage technique. The influence of adsorbed oxygen on the surface photovoltage (SPV) response of ZnO nanorods was studied by surface photovoltage spectroscopy (SPS) and field-induced surface photovoltage spectroscopy (FISPS). The results of SPS demonstrate that for ZnO nanorods the built-in electric field should be a main driving force for the separation of the photogenerated electron–hole pairs and its ensuing SPV response. The method of photogenerated charge recombination was also studied with the aid of PL spectroscopy. It is shown that the two methods of energy relaxation in light-excited ZnO nanorods are competitive. When oxygen is adsorbed at the surface and the built-in electric field is formed, the SPV response should be the leading one. Nevertheless, when oxygen is absent, the energy relaxation is mostly carried out by radiative emission.

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mentioning

confidence: 99%

Influence of adsorbed oxygen on the surface photovoltage and photoluminescence of ZnO nanorods

Lin¹,

Wang²,

Zhao³

et al. 2006

Nanotechnology

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“…In SPV spectroscopy, the change in the surface potential of a semiconductor due to redistribution of electron-hole pairs generated under optical excitation is monitored. This technique has been extensively used to characterize hetero-structures, quantum wells (QW), quantum dots, superlattices and nanostructures [2][3][4][5][6][7][8]. Several other experimental techniques such as photoluminescence spectroscopy (PL), photoluminescence excitation spectroscopy (PLE), absorption/transmission and photo-reflectance spectroscopy (PR), etc, can also give valuable information about quantum structures.…”

Section: Introductionmentioning

confidence: 99%

Surface photo-voltage characterization of GaAs/AlGaAs single quantum well laser structures grown by molecular beam epitaxy

Muralidharan¹,

Ramesh²,

Mishra³

et al. 2014

Semicond. Sci. Technol.

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We present surface photo-voltage (SPV) measurements on molecular beam epitaxy (MBE) grown single quantum well (SQW) laser structures. Each layer in the hetero-structure has been identified by measurement of the SPV signal after a controlled sequential chemical etching process. These results have been correlated with high resolution x-ray diffraction and photoluminescence (PL) measurements. Quantum confined Stark effect and the carrier screening of electric field have been taken into consideration both theoretically and experimentally to account for the differences observed in SPV and PL results. It is shown that SPV can be used as a very effective tool for evaluation of hetero-structures involving multiple layers.

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“…Recently, this technique has been used to characterize heterostructures, quantum wells (QWs), quantum dots and superlattices and nano-structures [14][15][16][17]. Solodky et al [18] and Cheng et al [19] have characterized pseudomorphic high electron mobility transistors using the SPV spectroscopy technique and demonstrated its potential as a simple non-destructive technique to assess P-HEMT structures.…”

Section: Introductionmentioning

confidence: 99%

Observation of indium segregation effects in structural and optical properties of pseudomorphic HEMT structures

Mishra¹,

Ramesh²,

Srinivasan³

et al. 2005

Semicond. Sci. Technol.

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We present a detailed study on the influence of several growth related factors such as indium segregation, spacer layer thickness and Si δ doping on the structural, optical and electrical properties of molecular beam epitaxy grown pseudomorphic high electron mobility transistor (P-HEMT) structures. Simulation of a high resolution x-ray diffraction (HRXRD) rocking curve was performed and compared with the experimental data to determine the quantum well (QW) thickness and composition as well as the indium segregation related changes in the QW composition. It is shown that growth of a thin layer (6 Å) of GaAs on top of the pseudomorphic InGaAs layer followed by 'flash-off' at a higher temperature could minimize the indium segregation related degradation of the hetero interface. Photoluminescence (PL) and surface photo voltage (SPV) peaks corresponding to the sub-band transitions are analysed using a self-consistent solution of Schrödinger and Poisson equations. PL results showed the dependence of the transition energies on the spacer layer thickness and the effectiveness of the carrier transfer into the InGaAs well. SPV spectra showed characteristic peaks from all the layers in the HEMT structures and were correlated with the data obtained from PL and HRXRD.

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Surface photovoltage spectroscopy of epitaxial structures for high electron mobility transistors

Cited by 8 publications

References 18 publications

Influence of adsorbed oxygen on the surface photovoltage and photoluminescence of ZnO nanorods

Influence of adsorbed oxygen on the surface photovoltage and photoluminescence of ZnO nanorods

Surface photo-voltage characterization of GaAs/AlGaAs single quantum well laser structures grown by molecular beam epitaxy

Observation of indium segregation effects in structural and optical properties of pseudomorphic HEMT structures

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