Surface photovoltage and modulation spectroscopy of E− and E+ transitions in GaNAs layers

Kudrawiec, R.; Sitarek, P.; Gładysiewicz, M.; Misiewicz, J.; He, Yahua; Jin, Y.; Vardar, Gulin; Mintarov, A.M.; Merz, J. L.; Goldman, R. S.; Yu, K. M.; Walukiewicz, W.

doi:10.1016/j.tsf.2014.07.052

Cited by 17 publications

(4 citation statements)

References 34 publications

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“…In the context of the BAC model, it is worthwhile to comment on the optical transitions between the remaining bands predicted within this model. So far such transitions have been observed for dilute nitrides [35,[40][41][42][43] but they have never been clearly observed for dilute bismides. However in recent papers [17,20] the authors have observed some experimental evidences for Bi-related resonant states in the valence band in GaAs 1−x Bi x in the transient reflectivity and electroreflectance measurements.…”

mentioning

confidence: 99%

Electromodulation spectroscopy of heavy-hole, light-hole, and spin-orbit transitions in GaAsBi layers at hydrostatic pressure

Dybała

Kopaczek

Gładysiewicz

et al. 2017

Applied Physics Letters

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GaAsBi layers of various Bi concentrations have been grown by molecular beam epitaxy on GaAs substrate and studied by electromodulation spectroscopy (EM). Optical transitions related to the heavy-hole (HH) and light-hole (LH) bands as well as the spin-orbit (SO) splitoff band have been observed in EM spectra and their energies have been found to be in very good agreement with theoretical predictions, which take into account the strain-related shifts obtained from the Bir-Pikus theory implemented to the electronic band structure of GaAsBi obtained after recent DFT calculations for this alloy. The pressure coefficients for HH, LH and SO transitions have been determined from PR measurements performed at various hydrostatic pressures and discussed.

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confidence: 99%

Electromodulation spectroscopy of heavy-hole, light-hole, and spin-orbit transitions in GaAsBi layers at hydrostatic pressure

Dybała

Kopaczek

Gładysiewicz

et al. 2017

Applied Physics Letters

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“…SPV spectroscopy has seldom been used to study dilute nitride materials, e.g. the optical absorption (Bansal et al, 2006) and the band offset (Galluppi et al, 2005) in InGaAsN/GaAs single quantum wells and the E ̶ and E+ transitions in GaNAs layers (Kudrawiec et al, 2014). However, no other groups have reported on SPV investigations of GaAsSbN dilute nitride materials.…”

Section: Surface Photovoltage Characterizationmentioning

confidence: 99%

Single-junction solar cells based on p-i-n GaAsSbN heterostructures grown by liquid phase epitaxy

et al. 2020

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“…SPV spectroscopy has rarely been used in the investigations of dilute nitride materials. For example, it has been applied to investigate the optical absorption [36] and the band offset [37] in InGaAsN/GaAs quantum wells and the E − and E + transitions in GaAsN layers [38]. However, SPV investigations of quaternary GaAsSbN dilute nitride materials have not been reported.…”

Section: Introductionmentioning

confidence: 99%

Surface Photovoltage Method for Photovoltaic Quality Control of GaAs-Based Solar Cells

Donchev,

Milanova

2023

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In this paper, we demonstrate the potential of the contactless surface photovoltage (SPV) method for fast and reliable control of GaAs-based solar cells directly on epitaxial heterostructures before metallization and photolithography processes. The magnitude of the SPV corresponds to the generated photovoltage in the photoactive region, which is related to the open circuit voltage of the cell. The focus of this investigation is the potential of dilute nitride compounds grown by low-temperature liquid-phase epitaxy (LPE) for application as intermediate cells in multijunction solar cells. First, SPV spectroscopy is used to determine the photosensitivity spectral range and bandgap of the grown dilute nitride compound layers. Further, the photovoltaic quality of the grown solar cell heterostructures is evaluated by comparing the magnitude of their SPV signals with that of a reference GaAs solar cell. A drastic reduction in the measured SPV is observed for nitrogen-containing solar cell structures, which correlates with the lowering of solar cell open-circuit voltage values measured under standard test conditions. Finally, solar cell structures based on nitrogen-free GaAsSb compounds with the same long-wavelength photosensitivity limit as GaAsSbN are grown by LPE. They show one order of magnitude higher SPV signal and, therefore, have a great potential for solar cell application.

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Surface photovoltage and modulation spectroscopy of E− and E+ transitions in GaNAs layers

Cited by 17 publications

References 34 publications

Electromodulation spectroscopy of heavy-hole, light-hole, and spin-orbit transitions in GaAsBi layers at hydrostatic pressure

Electromodulation spectroscopy of heavy-hole, light-hole, and spin-orbit transitions in GaAsBi layers at hydrostatic pressure

Single-junction solar cells based on p-i-n GaAsSbN heterostructures grown by liquid phase epitaxy

Surface Photovoltage Method for Photovoltaic Quality Control of GaAs-Based Solar Cells

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