2003
DOI: 10.1016/s0169-4332(02)01443-5
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Surface patterning on insulators upon femtosecond laser ablation

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Cited by 150 publications
(83 citation statements)
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“…Ripples having these properties can be produced with either cw lasers or pulsed lasers and are usually referred to as low spatial frequency LIPSSs (LSFLs). Ripples which are either orthogonal [7][8][9][10][11][12][13][14][15] or parallel [16][17][18][19] to the polarization, with a periodicity significantly smaller than the laser light, have been observed for laser pulse durations in the picosecond and femtosecond regime. These are often referred to as high spatial frequency LIPSSs (HSFLs), and as for LSFLs, they were observed on metals, 18,20 semiconductors, [7][8][9][10][11][12]16,17 and dielectrics as well.…”
Section: Introductionmentioning
confidence: 99%
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“…Ripples having these properties can be produced with either cw lasers or pulsed lasers and are usually referred to as low spatial frequency LIPSSs (LSFLs). Ripples which are either orthogonal [7][8][9][10][11][12][13][14][15] or parallel [16][17][18][19] to the polarization, with a periodicity significantly smaller than the laser light, have been observed for laser pulse durations in the picosecond and femtosecond regime. These are often referred to as high spatial frequency LIPSSs (HSFLs), and as for LSFLs, they were observed on metals, 18,20 semiconductors, [7][8][9][10][11][12]16,17 and dielectrics as well.…”
Section: Introductionmentioning
confidence: 99%
“…These are often referred to as high spatial frequency LIPSSs (HSFLs), and as for LSFLs, they were observed on metals, 18,20 semiconductors, [7][8][9][10][11][12]16,17 and dielectrics as well. [13][14][15]19 The influence of polarization, angle of incidence, and wavelength of a laser beam on LSFL formation strongly indicates that the phenomenon is mainly governed by the electromagnetic field. Emmony et al suggested in 1973 that LSFLs were a consequence of interference between the incident laser beam and surface-scattered waves.…”
Section: Introductionmentioning
confidence: 99%
“…The nanostructures using some beam processes such as electron [1,2], ion [3,4], molecular [5][6][7][8][9] and laser [10][11][12][13][14][15][16][17][18] was reported by their experimental observations. In particularly, a pulsed laser irradiation has been also achieved surface damage pattern at nanoscale on material surface with a wavelength-dependent periodicity by the interference of laser lights [19][20][21][22][23][24][25][26].…”
Section: Introductionmentioning
confidence: 99%
“…13,[23][24][25][26][27][28][29] It has been well known that when a linearly polarized laser beam impinges on a material at normal incidence, the fringe pattern of conventional-LIPSS appears in the form of parallel, periodic ripple lines with an incident light wavelength separation, irrespective of the surface crystallographic orientation, and most of the damage patterns are very similar and independent of material properties, regardless of whether the material is a metal or a semiconductor. 19 It is now generally accepted that conventional-LIPSS is formed by the interference between the incident laser light and the scattered waves on the surface, 21,22 which may include recent laser induced waves, such as electron plasma, 25 Coulomb explosion 30 or surface plasmons, 31 as an extension of the interference model for subwavelength ͑or high-spatialfrequency͒ LIPSS bifurcations.…”
Section: Introductionmentioning
confidence: 99%
“…b͒ originating from surface instabilities caused by two competing processes, namely, surface roughening due to explosion and surface smoothing due to self-diffusion. 13,27 Moreover, Romer et al 29 were unable to account for their results of subwavelength "pre-ripple" formation, which is initiated with irregular lines and with an orientation different from that of the "regular ripples" of conventional-LIPSS induced by a number of fs-laser pulses irradiated on the surfaces of alloys, using the four previous major models in the literature. They suggested a combination of the existing models including the above-mentioned models.…”
Section: Introductionmentioning
confidence: 99%