Surface pattering of Ge–As–Se thin films by electric charge accumulation

Bilanych, V. S.; Komanicky, Vladimir; Kozejova, Miroslava; Feher, A.; Kovalčíková, Alexandra; Lofaj, František; Кузьма, В. В.; Різак, В. М.

doi:10.1016/j.tsf.2016.07.073

Cited by 15 publications

(15 citation statements)

References 43 publications

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“…It can be seen that for G < 2400 mC•cm −2 the height of the surface relief gradually grows to 100-125 nm and for G > 2400 mC•cm −2 , relief height decreases. The changing of shape and parameters of the obtained surface relief on As3S77Ge20 film can be explained by the charge model, which was used earlier for the relief formation processes in Ge-As-Se chalcogenide films [5,6,11]. The formation of surface relief is due to structural changes in the film and the emergence of a space charge region (SCR) during the interaction of the film and the electron beam.…”

Section: Resultsmentioning

confidence: 95%

“…The formation of surface relief is due to structural changes in the film and the emergence of a space charge region (SCR) during the interaction of the film and the electron beam. The penetration of primary electrons into the film leads to the accumulation of charge in the film and on its surface, as well as the emission of electrons from the film back into the vacuum [6].…”

Section: Resultsmentioning

confidence: 99%

“…Numerous studies have concentrated on photoand thermally induced changes and imaging properties of As40S60-xSex layers (x = 0; 20; 30; 40; 60) with regard to their application for gratings fabrication [3][4][5][6] as well and other compositions of chalcogenide glasses. Usually surface relief is created after films exposure by respective light intensity pattern using selective etching.…”

Section: Introductionmentioning

confidence: 99%

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THE FORMATION OF SURFACE NANOSTRUCTURES ON As-S-Ge CHALCOGENIDE FILM AFTER E-BEAM EXPOSURE

Revutska¹,

Shylenko²,

Stronski³

et al. 2020

KPI SN

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Background. Chalcogenide glasses comprise a unique materials platform and are attractive in view of various applications that make use their intriguing characteristic, the ability to form surface-relief patterns. The interaction of these materials with the electron beam is of interest due to diversity of physical phenomena induced in chalcogenide films by laser irradiation. Objective. The purpose of the paper is to study direct (without selective etching) surface relief formation of optical elements periodic nanostructures on thermal vacuum evaporated film As3S77Ge20 of ∼8.3 μm thickness using electron beam lithography, as well as investigate the changes in surface nanostructures height and shape depending on exposure. Methods. The chemical composition was determined by energy dispersive analysis of X-rays. The film was irradiated by an electron beam using a scanning electron microscope. The influence of electron beam irradiation on As3S77Ge20 amorphous chalcogenide thin film was investigated. Surface relief of the film was tapped by atomic force microscope. Results. The exposure dose G varied from 12 mC•cm −2 to 12 C•cm −2. The formation of cones with Gaussian profile on the surfaces of the films was detected after local electron irradiation. Exposition dependent evolution of height surface nanostructures has been detected. It can be seen that for G < 2400 mC•cm −2 the height of the surface relief gradually grows to 100-125 nm and for G > 2400 mC•cm −2 , relief height decreases. The initial and inversion doses of relief formation on this film have found. For 6,6 μm pitch is equal to G0 = 9,60 mC•cm-2 , and the inversion dose of the surface relief shape G1= 31.18 C•cm −2. At d = 10 μm, these parameters are G 0 = 6,98 mC•cm −2 and G1 = 36.19 C•cm −2. The dependences () h = F G at increasing interval (16 mC•cm −2-1200 mC•cm −2) for d = 6.6 μm and d = 10 μm were fitted by exponential function. Conclusions. The changing of shape and parameters of the obtained surface relief on As3S77Ge20 film can be explained by the charge model. Our investigations have demonstrated that studied As3S77Ge20 composition is suitable for e-beam recording. These results show that As3S77Ge20 films can be used for fabrication of the optical elements.

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Section: Resultsmentioning

confidence: 95%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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THE FORMATION OF SURFACE NANOSTRUCTURES ON As-S-Ge CHALCOGENIDE FILM AFTER E-BEAM EXPOSURE

Revutska¹,

Shylenko²,

Stronski³

et al. 2020

KPI SN

View full text Add to dashboard Cite

show abstract

“…Однак, дослідження впливу електронного опромінення на халькогенідні плівки показали на наявність модифікації їх поверхні електронним променем [3][4][5] Зростання дози опромінення понад 9.310 4 мкКл/см 2 (t>5 мс) приводить до інверсії форми електронно індукованого рельєфу. В області доз 9.310 4 до 9.310 6 мкКл/см 2 при електронному опроміненні на поверхні плівки утворюються кратери з профілем гаусового типу.…”

Section: вступunclassified

“…Як було показано в [5], процес формування поверхневого рельєфу в халькогенідних плівках визначається як параметрами електронного променя так і товщиною та електрофізичними властивостями плівки.…”

Section: вступunclassified

Fabrication of information protection elements on the film As<sub>4</sub>Se<sub>96</sub> by electron-beam lithography method

Біланич¹,

Шиленко²,

Команіцкій³

et al. 2017

Sci.Herald.Uzh.Univ.Ser.Phys

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Direct surface patterning of amorphous chalcogenide layers with high- energy H+ and He+ ion beams

Molnár

Bohdan

Nagy

et al. 2019

J Mater Sci: Mater Electron

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As (Ge)-S (Se) based amorphous bulk chalcogenide glasses and layers have been used for surface geometrical relief recording by 2 MeV energy H + and He + ion-beams. The formation of giant (height modulation from nanometers up to micrometers) geometrical reliefs (dots, lines), have been investigated. Efficiency of surface patterning was compared for selected compositions, type of ion beam and conductivity of substrates. Comparisons with optical and e-beam recording were made with aim to establish the details of relief formation mechanisms. The results show applicability of high-energy ion beams for in situ fabrication of planar optical elements on the surface of chalcogenide glasses (bulk samples or amorphous films).

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Surface pattering of Ge–As–Se thin films by electric charge accumulation

Cited by 15 publications

References 43 publications

THE FORMATION OF SURFACE NANOSTRUCTURES ON As-S-Ge CHALCOGENIDE FILM AFTER E-BEAM EXPOSURE

THE FORMATION OF SURFACE NANOSTRUCTURES ON As-S-Ge CHALCOGENIDE FILM AFTER E-BEAM EXPOSURE

Fabrication of information protection elements on the film As<sub>4</sub>Se<sub>96</sub> by electron-beam lithography method

Direct surface patterning of amorphous chalcogenide layers with high- energy H+ and He+ ion beams

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