AMR
 2014
DOI: 10.4028/www.scientific.net/amr.936.603
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Surface Passivation of Crystalline Silicon by a-Si:H Thin Films

Yin Wang
1
,
Wei Li
2
,
An Ran Guo
3
et al.

Abstract: Surface passivation of c-Si by a-Si:H thin films has been studied. In this paper, the minority carrier lifetime of 345μs (from 85μs) is obtained at optimal hydrogen flow rate (8.0sccm) by using RF-magnetron sputtering method.

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