2019
DOI: 10.1016/j.apsusc.2019.07.064
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Surface oxidation of amorphous Si and Ge slanted columnar and mesoporous thin films: Evidence, scrutiny and limitations for infrared optics

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Cited by 10 publications
(4 citation statements)
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“…This explanation supports the fact that the intensity of Cu 2 O peaks increases with the increase of the film thickness. Nonetheless, this phenomenon can also be result of spontaneous surface oxidation as a consequence of high surface/volume ratio after the samples were removed from the deposition chamber and exposed to air, as already reported in the literature [48].…”
Section: Resultssupporting
confidence: 51%
“…This explanation supports the fact that the intensity of Cu 2 O peaks increases with the increase of the film thickness. Nonetheless, this phenomenon can also be result of spontaneous surface oxidation as a consequence of high surface/volume ratio after the samples were removed from the deposition chamber and exposed to air, as already reported in the literature [48].…”
Section: Resultssupporting
confidence: 51%
“…The insertion of porosity allows one to cut down the effective refractive index of the layer. However, increasing the porosity implies greater surface-to-volume ratios, which has been proven to have a detrimental effect on the electron mobility because the formation of native oxide shells within the semiconducting layers is favored when the surface exposed to air is greater . Hence, by tuning the growth conditions, the porosity of the nanostructures can be controlled, making these systems more appropriate for optical or electrical applications.…”
Section: Resultsmentioning
confidence: 99%
“…On the basis of our previous studies, 43 porous V films with large surface-to-volume ratios and enhanced reactivity with oxygen were deposited by the GLAD technique. The deposition angle α (the average angle of incoming particle flux) relative to the substrate normal was set at α = 85° (the maximum inclination allowed for efficient GLAD deposition, so that the greater the deposition angle, the higher the overall porosity of the film and, therefore, its specific surface area 44 ) with no rotation of the substrate (i.e., ϕ = 0 rev h –1 ). Argon was injected at a mass flow rate of 2.40 sccm, and the pumping speed was maintained at S = 13.5 L s –1 , leading to a sputtering pressure of 0.3 Pa.…”
Section: Methodsmentioning
confidence: 99%