Surface orientation as a control parameter for the growth of non‐stoichiometric gallium arsenide

Abstract

Dedicated to Professor Horst P. Strunk on the occasion of his 65th birthday PACS 68.43.Bc, 68.47.Fg, 68.55.Ac, 81.15.Hi In order to study the effect of the substrate orientation on the incorporation of excess arsenic into low temperature grown gallium arsenide, we examine molecular beam epitaxial layers grown at constant low substrate temperatures and constant III/V flux ratio on exactly (001) oriented substrates and on vicinal substrates tilted up to 10° towards the 〈111〉A and 〈111〉B directions. Our experiments show that the substrate orientation has a significant influence on the excess arsenic content and thus needs to be considered as an additional parameter to control low temperature growth of gallium arsenide. Respective ab-initio calculations offer first models for the incorporation of excess arsenic into As antisite and As interstitial positions on misoriented as well as exactly oriented substrates.

Friction characteristics of Cd-rich carbonate films on calcite surfaces: implications for compositional differentiation at the nanometer scale

“…Several authors have investigated systems where this control occurs. For example, Marek et al [ 88 ] found that surface orientation controls the composition of homoepitaxial grown layers of GaAs, whereas Jun et al [ 89 ] found that a carbonate surface can "direct" the form and composition of a precipitating layer of Mn oxide. In terms of minimizing the strain energy in the newly formed phase, growth of a solid solution with a higher Ca content will be favored over that composition predicted from bulk SS-AS thermodynamic considerations.…”