Surface morphology of α-SIC coatings deposited by RF magnetron sputtering

Tang, Huidong; Tan, Shuang‐Jie; Huang, Zhengren; Dong, Shaoming; Jiang, Daqing

doi:10.1016/j.surfcoat.2004.11.036

Cited by 29 publications

(8 citation statements)

References 14 publications

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“…The deposition rate is fast and the desired temperature is low, but the film stability of its system is not sustainable [39]. Magnetron sputtering SiC clapping was prepared with the roughness down to 1.394 nm RMS [40] and 3.184 nm RMS as shown in Figure 2 by Tang et al [22] and the surface roughness of 2 angstrom by Kortright and Windt [41].…”

Section: Ion-assisted Deposition Sic (Iad Sic)mentioning

confidence: 99%

Research Progress of Optical Fabrication and Surface‐Microstructure Modification of SiC

Jiang

Liu

Yang

et al. 2012

Journal of Nanomaterials

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SiC has become the best candidate material for space mirror and optical devices due to a series of favorable physical and chemical properties. Fine surface optical quality with the surface roughness (RMS) less than 1 nm is necessary for fine optical application. However, various defects are present in SiC ceramics, and it is very difficult to polish SiC ceramic matrix with the 1 nm RMS. Surface modification of SiC ceramics must be done on the SiC substrate. Four kinds of surface-modification routes including the hot pressed glass, the C/SiC clapping, SiC clapping, and Si clapping on SiC surface have been reported and reviewed here. The methods of surface modification, the mechanism of preparation, and the disadvantages and advantages are focused on in this paper. In our view, PVD Si is the best choice for surface modification of SiC mirror.

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Section: Ion-assisted Deposition Sic (Iad Sic)mentioning

confidence: 99%

Research Progress of Optical Fabrication and Surface‐Microstructure Modification of SiC

Jiang

Liu

Yang

et al. 2012

Journal of Nanomaterials

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“…Although there are several well-known techniques for synthesizing SiC thin films, their composition and final properties may vary considerably with the applied method [3,19]. Low-pressure plasma-based techniques have been extensively investigated, particularly those that allow the deposition at near-room temperatures, such as plasma-enhanced chemical vapor deposition (PECVD) and magnetron sputtering [1,3,22,23,24,25]. Along with the magnetron sputtering derivations, the high-power impulse magnetron sputtering (HiPIMS) technique appears to be very attractive due to its ability to generate high-density plasmas and a high degree of ionization of the sputtered atoms [26,27,28,29,30,31].…”

Section: Introductionmentioning

confidence: 99%

The Influence of AlN Intermediate Layer on the Structural and Chemical Properties of SiC Thin Films Produced by High-Power Impulse Magnetron Sputtering

et al. 2019

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Many strategies have been developed for the synthesis of silicon carbide (SiC) thin films on silicon (Si) substrates by plasma-based deposition techniques, especially plasma enhanced chemical vapor deposition (PECVD) and magnetron sputtering, due to the importance of these materials for microelectronics and related fields. A drawback is the large lattice mismatch between SiC and Si. The insertion of an aluminum nitride (AlN) intermediate layer between them has been shown useful to overcome this problem. Herein, the high-power impulse magnetron sputtering (HiPIMS) technique was used to grow SiC thin films on AlN/Si substrates. Furthermore, SiC films were also grown on Si substrates. A comparison of the structural and chemical properties of SiC thin films grown on the two types of substrate allowed us to evaluate the influence of the AlN layer on such properties. The chemical composition and stoichiometry of the samples were investigated by Rutherford backscattering spectrometry (RBS) and Raman spectroscopy, while the crystallinity was characterized by grazing incidence X-ray diffraction (GIXRD). Our set of results evidenced the versatility of the HiPIMS technique to produce polycrystalline SiC thin films at near-room temperature by only varying the discharge power. In addition, this study opens up a feasible route for the deposition of crystalline SiC films with good structural quality using an AlN intermediate layer.

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“…Although there are several well-known techniques for synthesizing SiC thin films, their composition and final properties may vary considerably with the applied method [3,16]. Low pressure plasma-based techniques have been extensively investigated, in special those that allow the deposition at near room temperature, such as plasma-enhanced chemical vapor deposition (PECVD) and magnetron sputtering [1,3,[19][20][21][22]. Along with the magnetron sputtering derivations, the high-power impulse magnetron sputtering (HiPIMS) technique appears to be very attractive due to its ability of generating high density plasmas and high degree of ionization of the sputtered atoms [23][24][25][26][27][28].…”

Section: Introductionmentioning

confidence: 99%

The Influence of AlN Buffer Layer on the Structural and Chemical Properties of SiC Thin Films Produced by High-Power Impulse Magnetron Sputtering

Galvão¹,

Guerino²,

Campos³

et al. 2019

Preprint

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Many strategies have been developed for the synthesis of silicon carbide (SiC) thin films on silicon (Si) substrates by plasma-based deposition techniques, especially plasma enhanced chemical vapor deposition (PECVD) and magnetron sputtering, due to importance of these materials for microelectronics and related fields. A drawback is the large lattice mismatch between SiC and Si. The insertion of a thin aluminum nitride (AlN) buffer layer between them has been shown useful to overcome this problem. Herein, the high-power impulse magnetron sputtering (HiPIMS) technique was used to grow SiC thin films on AlN/Si substrates. Furthermore, the SiC films were also grown on Si substrates. Comparisons of the structural and chemical properties of SiC thin films grown on the two types of substrates allowed us to evaluate the influence of AlN buffer layer on such properties. The chemical composition and stoichiometry of the samples were investigated by Rutherford backscattering spectrometry (RBS) and Raman spectroscopy, while the crystallinity was characterized by grazing incidence X-ray diffraction (GIXRD). Our set of results evidenced the versatility of HiPIMS technique to produce polycrystalline SiC thin films at near room temperature only varying the discharge power. In addition, this study opens up a feasible route for the deposition of crystalline SiC films with a good structural quality using AlN buffer layer.

show abstract

Surface morphology of α-SIC coatings deposited by RF magnetron sputtering

Cited by 29 publications

References 14 publications

Research Progress of Optical Fabrication and Surface‐Microstructure Modification of SiC

Research Progress of Optical Fabrication and Surface‐Microstructure Modification of SiC

The Influence of AlN Intermediate Layer on the Structural and Chemical Properties of SiC Thin Films Produced by High-Power Impulse Magnetron Sputtering

The Influence of AlN Buffer Layer on the Structural and Chemical Properties of SiC Thin Films Produced by High-Power Impulse Magnetron Sputtering

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