Surface modifications on as-grown boron doped CVD diamond films induced by the B2O3–ethanol–Ar system

Neto, M.A.; Pato, G.; Bundaleski, Nenad; Teodoro, O.M.N.D.; Fernandes, A.J.S.; Oliveira, F.J.; Silva, Rui

doi:10.1016/j.diamond.2016.02.001

Cited by 14 publications

(11 citation statements)

References 53 publications

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“…Prior to diamond growth, the Si substrates were subjected to a diamond "seeding" process, in which the Si substrates were mechanically and ultrasonically abraded with 0.5 μm diamond powder, with a soft cloth and in a suspension of ethanol, respectively, described elsewhere. 21 2.1.2. Diamond Growth.…”

Section: Methodsmentioning

confidence: 99%

“…Intrinsic (ID) and Boron-doped (BDD) diamond films were grown on silicon substrates (single side polished). Prior to diamond growth, the Si substrates were subjected to a diamond “seeding” process, in which the Si substrates were mechanically and ultrasonically abraded with 0.5 μm diamond powder, with a soft cloth and in a suspension of ethanol, respectively, described elsewhere …”

Section: Experimental Sectionmentioning

confidence: 99%

“…Ar was used as a carrier gas in case of doping parameter were 10, 15, and 20 standard cubic centimeters per minute (sccm) for BDD1, BDD2, and BDD3, respectively. The experimental conditions were carefully selected based on the extensive previous work carried out within our group, particularly on prior knowledge acquired from several studies related to intrinsic and boron-doped diamond HFCVD thin films. − …”

Section: Experimental Sectionmentioning

confidence: 99%

See 2 more Smart Citations

Advances in RF Glow Discharge Optical Emission Spectrometry Characterization of Intrinsic and Boron-Doped Diamond Coatings

Sharma

Girão

Chapon

et al. 2022

ACS Appl. Mater. Interfaces

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Accurate determination of the effective doping range within diamond thin films is important for fine-tuning of electrical conductivity. Nevertheless, it is not easily attainable by the commonly adopted techniques. In this work, pulsed RF glow discharge optical emission spectrometry (GD-OES) combined with ultrafast sputtering (UFS) is applied for the first time to acquire elemental depth profiles of intrinsic diamond coatings and boron content bulk distribution in films. The GD-OES practical advances presented here enabled quick elemental profiling with noteworthy depth resolution and determination of the film interfaces. The erosion rates and layer thicknesses were measured using differential interferometric profiling (DIP), demonstrating a close correlation between the coating thickness and the carbon/hydrogen gas ratio. Moreover, DIP and the adopted semiquantification methodology revealed a nonhomogeneous bulk distribution of boron within the diamond crystalline structure, i.e., boron doping is both substitutional and interstitial within the diamond framework. DIP measurements also showed that effective boron doping is not linearly correlated to the increasing content introduced into the diamond coating. This is a finding well supported by X-ray diffraction (XRD) Rietveld refinement and X-ray photoelectron spectroscopy (XPS). This work demonstrates the advantage of applying advanced GD-OES operation modes due to its ease of use, affordability, accuracy, and high-speed depth profile analysis capability.

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Section: Methodsmentioning

confidence: 99%

Section: Experimental Sectionmentioning

confidence: 99%

Section: Experimental Sectionmentioning

confidence: 99%

See 1 more Smart Citation

Advances in RF Glow Discharge Optical Emission Spectrometry Characterization of Intrinsic and Boron-Doped Diamond Coatings

Sharma

Girão

Chapon

et al. 2022

ACS Appl. Mater. Interfaces

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“…For p-type NCD films, boron is the only element can be easily introduced into the lattice of diamond films without apparently changing the structure. Boron has small atomic radius, which is shallow acceptor impurity of diamond, so the resistivity of diamond film after boron doping has declined sharply, leading to the improvement of the conductive performance of the film [22] [23]. The suitable concentration of boron doping not only improves the conductivity of diamond film, but also improves the crystal quality and morphology by adding a small amount of boron to diamond film.…”

Section: Properties Of Nanocrystalline Diamondmentioning

confidence: 99%

Nanocrystalline Diamond Films Grown by Microwave Plasma Chemical Vapor Deposition and Its Biocompatible Property

Yang¹,

Zhang²

2018

AMPC

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Due to its unique properties such as high hardness, light transmittance, thermal conductance, chemical stability and corrosion resistance, diamond has drawn tremendous attention in last two decades. These specific properties made diamond film a promising material for cutting tools, microwave windows, heat sinks for electronic devices and diamond electrodes. However, the diamond film with grain sizes at microscale usually exhibits high surface roughness and hinders its applications in the microelectro mechanical system (MEMS) and biological field because it is difficult to be polished by mechanical and chemical methods. With the development of the chemical vapor deposition, the nanocrystalline diamond (NCD) film has been fabricated and found new applications. The grain size of NCD film is in the range of 10 to 100 nm, which inherits the properties of the diamond and possesses the unique properties of the nanoscale materials, and the morphology of the NCD film is granular or needle-like structure. The microwave plasma chemical vapor deposition (MPCVD) has been regarded as the most promising method to deposit NCD film at low temperature. Compared to the hot filament CVD, MPCVD can grow high quality NCD film avoiding of the contamination from the filament materials. The MPCVD technique has high plasma density to activate carbonaceous compound and grow NCD film in high growth rate and low substrate temperature. The unique properties of NCD film, such as the superior electrical, mechanical and biological properties facilitate their application in various fields. The biological application, especially as a biocompatible coating, mainly includes the joint replacement implants and protective coatings and the ophthalmological prosthesis.

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“…Boron doping source, boron oxide (B 2 O 3 ) diluted in ethanol, was dragged by constant Ar flow at different CH 4 /H 2 gas ratios and system pressures. Details can be found elsewhere [28]. Two samples (with and without PT) were simultaneously coated in each CVD run, to infer the effect of the PT on the characteristics of the heterojunction, if any.…”

Section: Diamond-sic Heterojunctionsmentioning

confidence: 99%

Diamond / SiC heterojunctions

Mukherjee

Mendes

Alves

et al. 2016

2016 12th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME)

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Abstract-Diamond and SiC are wide bandgap (WBG) materials which can be used to fabricate high power devices with improved performance. The combination of these materials into one single device is expected to bring some benefits, like a better thermal management with a corresponding increase in the operating power. Diamond films deposited by Chemical Vapor Deposition (CVD) can be doped with boron, making them p-type semiconductors. Diamond films deposited on foreign substrates are intrinsically polycrystalline, so the quality of the interface, determined by deposition conditions and seeding method, plays a critical role in the heterojunction characteristics, impacting both reverse current and breakdown voltage. This work reports the fabrication and characterization of p-diamond / n-SiC heterojunctions. P-type polycrystalline diamond (PCD) films were deposited directly on the surface on n-type SiC commercial wafers by Hot Filament CVD (HFCVD) using different seeding techniques. I-V characteristics of the obtained heterojunctions were measured at room temperature and the quality and morphology of the diamond films were assessed by scanning electronic microscopy (SEM) and Raman spectroscopy. The influence of the different seeding techniques on the I-V characteristics is discussed.

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Surface modifications on as-grown boron doped CVD diamond films induced by the B2O3–ethanol–Ar system

Cited by 14 publications

References 53 publications

Advances in RF Glow Discharge Optical Emission Spectrometry Characterization of Intrinsic and Boron-Doped Diamond Coatings

Advances in RF Glow Discharge Optical Emission Spectrometry Characterization of Intrinsic and Boron-Doped Diamond Coatings

Nanocrystalline Diamond Films Grown by Microwave Plasma Chemical Vapor Deposition and Its Biocompatible Property

Diamond / SiC heterojunctions

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