Surface modification of β-Ga2O3 layer using pt nanoparticles for improved deep UV photodetector performance

Yu, Jiangang; Lou, Jianshe; Wang, Zhuo; Ji, Siwei; Chen, Jiajie; Peng, Bo; Hu, Yanfei; Yuan, Lei; Zhang, Yuming; Jia, Renxu

doi:10.1016/j.jallcom.2021.159508

Cited by 55 publications

(21 citation statements)

References 46 publications

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“…33 The PE-MAC-etched PD recorded notably lower τ 1 and τ 2 , linked to intrinsic band-to-band transitions and slow reactions related to surface oxygen species or defects, respectively. 5,34 The decrease was significant in τ 2 than τ 1 in both rise and decay. Significantly lower τ 2 implies a significant reduction in plasma-induced damage with PE-MAC etching compared with conventional plasma etching.…”

Section: Resultsmentioning

confidence: 88%

Photo-enhanced metal-assisted chemical etching of α-gallium oxide grown by halide vapor-phase epitaxy on a sapphire substrate and its applications

Choi,

Jeon,

Park

et al. 2023

Mater. Adv.

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Section: Resultsmentioning

confidence: 88%

Photo-enhanced metal-assisted chemical etching of α-gallium oxide grown by halide vapor-phase epitaxy on a sapphire substrate and its applications

Choi,

Jeon,

Park

et al. 2023

Mater. Adv.

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“…It can also be deduced that the high I ph occurred because Sn dopants increased the conductivity of Ga 2 O 3 . Moreover, the I ph increases with increasing light intensity according to the power law I ph ∝ P θ where P is the light intensity, θ is the affecting factor, and I ph is proportional to P θ . For our PD, the value of θ is calculated to be 0.87, as illustrated in Figure c, which is less than unity.…”

Section: Resultsmentioning

confidence: 99%

Photogain-Enhanced Signal-to-Noise Performance of a Polycrystalline Sn:Ga₂O₃ UV Detector via Impurity-Level Transition and Multiple Carrier Transport

Yao,

Liu,

Zhang

et al. 2023

ACS Appl. Electron. Mater.

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“…[61,62,68] More importantly, the high-density Al@Al 2 O 3 core−shell nanoplasmonic array can also be applied in a heterojunction-type Ga 2 O 3 solarblind PD, which has a much faster speed in principle. [30,69]…”

Section: Resultsmentioning

confidence: 99%

Ultra‐Sensitive β‐Ga₂O₃ Solar‐Blind Photodetector with High‐Density Al@Al₂O₃ Core−Shell Nanoplasmonic Array

Qian

et al. 2022

Advanced Optical Materials

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β‐Ga2O3 solar‐blind photodetectors (PDs) are attracting great attention for broad applications. However, their detection sensitivities are still lower than expected after tremendous efforts. The phenomenon of localized surface plasmon resonance (LSPR) offers another approach beyond conventional techniques to engineer the photodetection performance, but extending the plasmonic properties into the deep‐ultraviolet region faces severe challenges, among which strictly controlling the nanostructures structural properties is extremely prominent besides material selection. Herein, well‐defined Al@Al2O3 core−shell nanostructure arrays are fabricated with sub‐50 nm feature sizes, narrow dimension distributions, periodic graphene‐like patterns, and extremely high densities (up to 152.7 counts µm−2). The decorated β‐Ga2O3 PDs exhibit significantly enhanced sensitivities without response spectra broadening. Particularly, the sample with a 42‐nm nanostructure array possesses an ultrahigh specific detectivity (4.22 × 1015 Jones), being one of the top among film‐type gallium oxide PDs, and an excellent responsivity of 216.0 A W−1 peaked at 235 nm. Moreover, the passivation effect of self‐terminating native oxide shell is confirmed. The finite‐difference time‐domain simulations based on isolated, dimer, and arrayed models not only demonstrate the presence of LSPR, but also reveal the critical contribution of nanostructure density. The findings provide an alternative platform to break the bottleneck and develop ultra‐sensitive, truly solar‐blind PDs for advanced optoelectronic systems.

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Surface modification of β-Ga2O3 layer using pt nanoparticles for improved deep UV photodetector performance

Cited by 55 publications

References 46 publications

Photo-enhanced metal-assisted chemical etching of α-gallium oxide grown by halide vapor-phase epitaxy on a sapphire substrate and its applications

Photo-enhanced metal-assisted chemical etching of α-gallium oxide grown by halide vapor-phase epitaxy on a sapphire substrate and its applications

Photogain-Enhanced Signal-to-Noise Performance of a Polycrystalline Sn:Ga₂O₃ UV Detector via Impurity-Level Transition and Multiple Carrier Transport

Ultra‐Sensitive β‐Ga₂O₃ Solar‐Blind Photodetector with High‐Density Al@Al₂O₃ Core−Shell Nanoplasmonic Array

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Surface modification of β-Ga2O3 layer using pt nanoparticles for improved deep UV photodetector performance

Cited by 55 publications

References 46 publications

Photo-enhanced metal-assisted chemical etching of α-gallium oxide grown by halide vapor-phase epitaxy on a sapphire substrate and its applications

Photo-enhanced metal-assisted chemical etching of α-gallium oxide grown by halide vapor-phase epitaxy on a sapphire substrate and its applications

Photogain-Enhanced Signal-to-Noise Performance of a Polycrystalline Sn:Ga2O3 UV Detector via Impurity-Level Transition and Multiple Carrier Transport

Ultra‐Sensitive β‐Ga2O3 Solar‐Blind Photodetector with High‐Density Al@Al2O3 Core−Shell Nanoplasmonic Array

Contact Info

Product

Resources

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Photogain-Enhanced Signal-to-Noise Performance of a Polycrystalline Sn:Ga₂O₃ UV Detector via Impurity-Level Transition and Multiple Carrier Transport

Ultra‐Sensitive β‐Ga₂O₃ Solar‐Blind Photodetector with High‐Density Al@Al₂O₃ Core−Shell Nanoplasmonic Array