Surface modification of silicon oxycarbide films produced by remote hydrogen microwave plasma chemical vapour deposition from tetramethyldisiloxane precursor

Uznański, Paweł; Glebocki, Bartosz; Walkiewicz-Pietrzykowska, A.; Zakrzewska, Joanna; Wróbel, A. M.; Balcerzak, Jacek; Tyczkowski, J.

doi:10.1016/j.surfcoat.2018.07.050

Cited by 15 publications

(6 citation statements)

References 57 publications

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“…The deposition of a-SiCO:H films was carried out from diethoxymetylsilane, DEMS, (ABCR, Karlsruhe, Germany) precursor using a custom made RPCVD reactor described in detail elsewhere. [38,39] The main chamber, which held the heater stage and substrates, consists of two glassy lids flat flange equipped with center and side inlets (HWS Labortechnik Mainz, Germany). Coating depositions were performed at the flow rate of upstream gas F(H 2 )=100 sccm, the flow rate of the precursor F (DEMS)=5.4±0.1 mg min -1 = 0.91±0.01 sccm and microwave power input P=70 W. This corresponded to a DEMS to hydrogen ratio of 0.0091.…”

Section: Sample Preparationmentioning

confidence: 99%

“…Chemical shifts and structure assignments [40] (putative) of resonances in the 29 energy values of 101.2, 282.6 and 530.5 eV, which correspond to Si 2p, C 1s, and O 1s core levels. The high resolution Si 2p and C 1s spectra, exemplified in Figure 6 for T S =30 and 350 C samples, were fitted with several symmetric Gaussian-Lorentzian (in proportion 70:30) components, according to the literature data referring to a-SiOC:H films produced by various plasma CVD deposition techniques, [25,36,39] and resolving detailed chemical structure. The deconvoluted Si 2p spectra deposited at T S 30 and 350 C (Figure 6a and 6b) are composed of three components with the Si atom linked with either two ((-C-) 2 Si(-O-) 2 ), three ((-C-)Si(-O-) 3 ) and four (Si(-O-) 4 ) oxygen atoms at binding energy of 101.9, 102.6 and 103.6 eV, respectively.…”

Section: T a B L Ementioning

confidence: 99%

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Atomic Hydrogen Induced Chemical Vapor Deposition of Silicon Oxycarbide Thin Films Derived from Diethoxymethylsilane Precursor

Uznański

Walkiewicz-Pietrzykowska

Jankowski

et al. 2020

Applied Organom Chemis

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Amorphous silicon oxycarbide (a-SiOC:H) films produced by remote plasma RPCVD from diethoxymethylsilane (DEMS) were characterized in terms of their basic properties related to the coatings deposited using conventional plasma enhanced PECVD method. The effect of substrate temperature (T S) on the growth rate, chemical composition, structure, and properties of resulting a-SiOC:H films is reported. Film growth is an adsorption-controlled process, wherein two mechanisms can be distinguished with a transition at about T S =70 C. Depending on the temperature, films of different nature can be obtained, from polymer-like to highly crosslinked material with C-Si-O network. The chemical structure of a-SiOC:H films was characterized by FTIR, 13 C and 29 Si solid-state NMR, and X-ray photoelectron spectroscopes. The a-SiOC:H films were also characterized in terms of their density, refractive index, surface morphology, conformality of coverage, hardness, adhesion to a substrate, and friction coefficient. The films were found to be morphologically homogeneous materials exhibiting good conformality of coverage and small surface roughness. Their refractive index exhibits anomalous effect revealing a minimum value at T S =125 C. Due to their exceptional physical properties a-SiOC:H films produced by RPCVD from DEMS precursor seems to be useful as potential dielectric materials or coatings for various encapsulation applications. K E Y W O R D S a-SiOC:H films, remote hydrogen plasma CVD, diethoxymethylsilane, mechanical properties, optical properties 1 | INTRODUCTION Nowadays, silicon oxycarbide materials (SiOC), also referred to as hybrid organosilicate glasses (OSG), processed from small organosilane precursors have attracted researchers' attention due to their many interesting properties, such as: thermal stability, dielectric constant of adjustable value from 2.4 to 3.9, very low absorption coefficient, wide band gap, tuneable refractive index, high hardness and elastic modulus, low residual stress and resistance to oxidation. [1-5] The main potential applications of silicon oxycarbide materials include light

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Section: Sample Preparationmentioning

confidence: 99%

Section: T a B L Ementioning

confidence: 99%

Atomic Hydrogen Induced Chemical Vapor Deposition of Silicon Oxycarbide Thin Films Derived from Diethoxymethylsilane Precursor

Uznański

Walkiewicz-Pietrzykowska

Jankowski

et al. 2020

Applied Organom Chemis

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“…16, while Table 4 gives the contribution of particular components of each spectrum. For the non-modified MWCNTs, the C 1s spectrum is comprised of bands typical for carbon materials [18,[39][40][41][42]. The highest intensity is shown by the maximum at 284.6 eV corresponding to C=C (sp 2 ) bonds.…”

Section: Activated Filler Modification With Silane Derivativesmentioning

confidence: 99%

Low-temperature plasma modification of carbon nanofillers for improved performance of advanced rubber composites

et al. 2019

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In modern polymer industry, there still is a room for new generations of fillers capable of enhancing the performance of composite materials. Currently, much effort is being put into a process of improving mechanical properties of elastomer materials. In this work, multiwalled carbon nanotubes (MWCNTs) and graphene nanoplatelets (GnPs) were modified with silane, titanate, or zirconate using plasma treatment, in order to apply them as fillers for styrene/butadiene rubber. Following its modification, filler surface was analyzed: Surface free energy (SFE) was measured with tensiometry, and micromorphology and chemical composition were studied with scanning electron microscopy-energy-dispersive spectroscopy (SEM-EDS), while elemental composition and bonding were assessed with X-ray photoelectron spectroscopy (XPS) and time-of-flight secondary ion mass spectrometry (ToF-SIMS). Low-temperature oxygen plasma activation of MWCNT fillers leads to a significant increase in the SFE polar component, with the same effect being much weaker for GnP fillers. Grafting silanes, zirconates, and titanates on activated filler surface results in a decrease in SFE polar component-surface oxygen-containing active groups react with silane/zirconate/titanate molecules. Fillers modified in this way exhibit different micromorphology and surface chemical composition what is revealed with the SEM-EDS, ToF-SIMS, and XPS techniques. As the ultimate step, either MWCNT or GnP rubber nanocomposites were manufactured using the modified fillers with their mechanical properties and cross-link density being studied. Filler modification resulted in substantial changes both in composite performance, and in its cross-linking density. In the case of modified filler containing composites, improved tensile strength and elongation at break were observed.

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“…The second band at 103.1 eV is associated with Si atoms bonded to four adjacent oxygen atoms (Si(-O-) 4 ), and the last band at 100.9 eV comes from silicon bonded to three carbon atoms and one oxygen atom, denoted as (-C-) 3 Si(-O-). In the case of the pp-HMDSO layer (Figure 7), all three bands correspond to silicon oxycarbide species [53]. The band centered at 101.1 eV is related to (-C-) 3 Si(-O-).…”

Section: Molecular Structurementioning

confidence: 97%

Artificial Superhydrophobic and Antifungal Surface on Goose Down by Cold Plasma Treatment

et al. 2020

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Plasma treatment, especially cold plasma generated under low pressure, is currently the subject of many studies. An important area using this technique is the deposition of thin layers (films) on the surfaces of different types of materials, e.g., textiles, polymers, metals. In this study, the goose down was coated with a thin layer, in a two-step plasma modification process, to create an artificial superhydrophobic surface similar to that observed on lotus leaves. This layer also exhibited antifungal properties. Two types of precursors for plasma enhanced chemical vapor deposition (PECVD) were applied: hexamethyldisiloxane (HMDSO) and hexamethyldisilazane (HMDSN). The changes in the contact angle, surface morphology, chemical structure, and composition in terms of the applied precursors and modification conditions were investigated based on goniometry (CA), scanning electron microscopy (SEM), Fourier-transform infrared spectroscopy in attenuated total reflectance mode (FTIR-ATR), and X-ray photoelectron spectroscopy (XPS). The microbiological analyses were also performed using various fungal strains. The obtained results showed that the surface of the goose down became superhydrophobic after the plasma process, with contact angles as high as 161° ± 2°, and revealed a very high resistance to fungi.

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Surface modification of silicon oxycarbide films produced by remote hydrogen microwave plasma chemical vapour deposition from tetramethyldisiloxane precursor

Cited by 15 publications

References 57 publications

Atomic Hydrogen Induced Chemical Vapor Deposition of Silicon Oxycarbide Thin Films Derived from Diethoxymethylsilane Precursor

Atomic Hydrogen Induced Chemical Vapor Deposition of Silicon Oxycarbide Thin Films Derived from Diethoxymethylsilane Precursor

Low-temperature plasma modification of carbon nanofillers for improved performance of advanced rubber composites

Artificial Superhydrophobic and Antifungal Surface on Goose Down by Cold Plasma Treatment

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