Surface modification of multilayer graphene using Ga ion irradiation

Wang, Quan; Shao, Ying; Ge, Daohan; Yang, Qizhi; Ren, Naifei

doi:10.1063/1.4919071

Cited by 11 publications

(11 citation statements)

References 40 publications

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“…These traps result in an increase of the apparent SP that the KPFM tries to balance by increasing the DC potential applied to the tip. This interpretation is contrary to the previous report by Wang et al who attributed the changes in SP observed in ion irradiated multilayer graphene to doping. Similarly, the doping hypothesis was also shown for the case of single graphene exfoliated on SiC .…”

Section: Resultscontrasting

confidence: 99%

“…The difference in topographical changes, as well as the surface potential as a function of ion dose, are shown in Figure . Low ion dose can result in ion implantation giving way to swelling of the sample's surface as shown for the case of graphene . However, in our case, contrary to that report, we cannot attribute the topographical increase to hydrocarbon layers formed on the ion‐irradiated samples.…”

Section: Resultscontrasting

confidence: 82%

“…The inset in Figure c corresponds to the crystallite size variation determined from Equation as a function of ion dose, where laser wavelength λ L and L a are in nm units . The fit shows the linear correlation between crystallite size and ion dose on a logarithmic scale.…”

Section: Resultsmentioning

confidence: 96%

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Ion‐Induced Defects in Graphite: A Combined Kelvin Probe and Raman Microscopy Investigation

Rodriguez

Khan

et al. 2019

Physica Status Solidi (a)

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Carbon nanomaterials are important for future sensors and electronics. Defects determine the material properties, therefore, it is critical to find new ways to investigate defects at the nanoscale. In this context, Raman spectroscopy (RS) is the tool of choice to study defects in carbon nanomaterials. On the other hand, Kelvin probe force microscopy (KPFM) provides structural and surface potential information at the nanoscale. Here, the authors demonstrate the synergistic application of these methods in the investigation of ion-beaminduced defects in graphite. KPFM and RS imaging are used for visualizing ioninduced defects in a wide range of ion doses from 10 10 to 10 16 ions cm À2 . For the lower range of ion dose, the authors find that RS provides image contrast for the different defect regions in graphite up to a dose of 5 Â 10 13 ions cm À2 . For higher doses, the sp 2 carbon concentration becomes so small that the Raman spectra get dominated by broad amorphous carbon bands. For this dose range, the KPFM contrast allows the defective regions to be differentiated. This contrast in KPFM originates from sp 3 carbons that act as charge traps. The results show that KPFM and Raman microscopy make a powerful and necessary combination for studying the spatial distribution of defects in carbon.

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Section: Resultscontrasting

confidence: 99%

Section: Resultscontrasting

confidence: 82%

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Ion‐Induced Defects in Graphite: A Combined Kelvin Probe and Raman Microscopy Investigation

Rodriguez

Khan

et al. 2019

Physica Status Solidi (a)

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“…In addition, Wang et al . studied the effects of surface modification of graphene induced by Ga + ion beam irradiation with varying dwell times and got many meaningful results 19 . Despite the fact that there are numerous achievements and research on ion modification, the majority of the materials modified by ion beam have been focused on the graphene, and the investigate of FePS 3 are rare.…”

Section: Introductionmentioning

confidence: 99%

Surface modification of multilayer FePS3 by Ga ion irradiation

Shang-wu

Ouyang

et al. 2019

Sci Rep

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In order to investigate the modification of the surface structure of FePS3 via Ga+ ion irradiation, we study the effect of thickness and Raman spectrum of multilayer FePS3 irradiated for 0 μs, 30 μs, and 40 μs, respectively. The results demonstrate that the intensity ratio of characteristic Raman peaks are obviously related to the thickness of FePS3. After Ga+ ion irradiation, the FePS3 sample gradually became thinner and the Eu peak and Eg(v11) peak in the Raman spectrum disappeared and the peak intensity ratio of A1g(v2) with respect to A1g(v1) weakened. This trend becomes more apparent while increasing irradiation time. The phenomenon is attributed to the damage of bipyramid structure of [P2S6]4− units and the cleavage of the P-P bands and the P-S bands during Ga+ ion irradiation. The results are of great significance for improving the two-dimensional characteristics of FePS3 by Ga+ ion beam, including structural and optical properties, which pave the way of surface engineering to improve the performance of various two-dimensional layered materials via ion beam irradiation.

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“…Experimental and theoretical studies showed an array of nanodots and nanowires on graphene on SiO 2 using 30 keV Ga ion irradiation [6]. The structural modification in mechanically exfoliated multilayer graphene on SiO 2 substrate caused an increase in defects with the increase in dwell time of ion irradiation, along with an increase in the compressive strain using focused ion beam (FIB) with Ga ions [7]. It was also shown that multilayered graphene is p-type doped due to defects thereby resulting in increasing the work function [7].…”

Section: Introductionmentioning

confidence: 99%

Structural Modifications in Epitaxial Graphene on SiC Following 10 keV Nitrogen Ion Implantation

et al. 2020

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Modification of epitaxial graphene on silicon carbide (EG/SiC) was explored by ion implantation using 10 keV nitrogen ions. Fragments of monolayer graphene along with nanostructures were observed following nitrogen ion implantation. At the initial fluence, sp3 defects appeared in EG; higher fluences resulted in vacancy defects as well as in an increased defect density. The increased fluence created a decrease in the intensity of the prominent peak of SiC as well as of the overall relative Raman intensity. The X-ray photoelectron spectroscopy (XPS) showed a reduction of the peak intensity of graphitic carbon and silicon carbide as a result of ion implantation. The dopant concentration and level of defects could be controlled both in EG and SiC by the fluence. This provided an opportunity to explore EG/SiC as a platform using ion implantation to control defects, and to be applied for fabricating sensitive sensors and nanoelectronics devices with high performance.

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Surface modification of multilayer graphene using Ga ion irradiation

Cited by 11 publications

References 40 publications

Ion‐Induced Defects in Graphite: A Combined Kelvin Probe and Raman Microscopy Investigation

Ion‐Induced Defects in Graphite: A Combined Kelvin Probe and Raman Microscopy Investigation

Surface modification of multilayer FePS3 by Ga ion irradiation

Structural Modifications in Epitaxial Graphene on SiC Following 10 keV Nitrogen Ion Implantation

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