Surface modification of diamond wire sawn multi-crystalline silicon wafers by grinding pre-treatment for wet acid texturization

Zhang, Jinbing; Zhang, Xiaoxin; Zhou, Lang; Kuang, Yunhui; Liu, Yulong

doi:10.1016/j.mssp.2020.105191

Cited by 8 publications

(2 citation statements)

References 13 publications

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“…According to statistics, the reflectivity of mc-Si wafers pretreated by other pretreatment methods such as micro-pressure sandblasting pretreatment, ultrasonic pretreatment and heating pretreatment is 22.28%, 22.54% and 23.8%, respectively [28][29][30][31][32]. The comparison reveals that the average reflectivity of the texture structure of the mc-Si wafers obtained by taking the stirred slurry pretreatment is very similar to the results obtained by all other pretreatment methods.…”

Section: Surface Morphology and Reflectivity After Etchingmentioning

confidence: 54%

“…Another exploration direction is to modify the surface of the mc-Si wafer cut by DWS to effectively remove the saw marks and amorphous silicon layer, so as to form a surface morphology similar to that of the silicon wafer cut by SWS. Based on this idea, researchers have proposed surface pretreatment methods such as sandblasting [8,28], ultrasonic treatment [29], grinding [30], lapping [31], laser processing [32], and ultrasonic vibration-assisted processing [33]. Thus, the ideal surface structure of silicon wafer can be obtained by traditional acid etching.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Surface properties of diamond wire sawn photovoltaic mc-Si wafers by stirred slurry pretreated and additive-free acid textured

Liu¹,

Gao²,

Yang³

2022

Surf. Topogr.: Metrol. Prop.

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Diamond wire saw cutting multi-crystalline silicon (mc-Si) wafers has the advantage of high cutting rate. However, it is difficult to follow the current additive-free wet acid etching process to prepare the anti-reflective textured surface due to the obvious saw marks on the surface of the as-sawn wafer. In response to this problem, this paper proposes a turbine-type stirred slurry pretreatment process to modify the surface of mc-Si wafers cut by diamond wire to make it suitable for the subsequent conventional wet acid texturing process. The experimental results show that the consistency of the surface structure of the mc-Si wafers can be effectively improved after turbine-type stirred slurry pretreatment by choosing suitable process parameters. The reflectivity of the pretreated mc-Si wafers after acid texturing is greatly reduced compared with that before processing, which can meet the production requirements of solar photovoltaic cells. Furthermore, based on ANSYS Workbench and Fluent, numerical simulation of the surface pretreatment process of large-size silicon wafers in practical industrial applications was carried out, and the uniformity of the surface modification treatment was analyzed.The research results provide ideas for promoting the adaptation of the diamond wire sawing of mc-Si silicon wafers to the acid wet texturing technology.

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