2015
DOI: 10.1021/jacs.5b00256
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Surface Modification of CoOx Loaded BiVO4 Photoanodes with Ultrathin p-Type NiO Layers for Improved Solar Water Oxidation

Abstract: Photoelectrochemical (PEC) devices that use semiconductors to absorb solar light for water splitting offer a promising way toward the future scalable production of renewable hydrogen fuels. However, the charge recombination in the photoanode/electrolyte (solid/liquid) junction is a major energy loss and hampers the PEC performance from being efficient. Here, we show that this problem is addressed by the conformal deposition of an ultrathin p-type NiO layer on the photoanode to create a buried p/n junction as w… Show more

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Cited by 549 publications
(451 citation statements)
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“…Zhong et al [52], in a different work, introduced CoO x as an OEC; it was found to be responsible for an increase in the photocurrent density of bare BiVO 4 from about 1 mA/cm 2 to about 1.5 mA/cm 2 at 1.2 V vs. RHE, when operating at neutral pH in a phosphate electrolyte. The same authors then used the dual OECs NiOOH (deposited in situ)/CoO x with an ultrathin ALD-deposited NiO layer on top and added them to a BiVO 4 /Ti layer.…”
Section: Strategies Adopted To Enhance Reaction Kinetics In Solar Watmentioning
confidence: 99%
“…Zhong et al [52], in a different work, introduced CoO x as an OEC; it was found to be responsible for an increase in the photocurrent density of bare BiVO 4 from about 1 mA/cm 2 to about 1.5 mA/cm 2 at 1.2 V vs. RHE, when operating at neutral pH in a phosphate electrolyte. The same authors then used the dual OECs NiOOH (deposited in situ)/CoO x with an ultrathin ALD-deposited NiO layer on top and added them to a BiVO 4 /Ti layer.…”
Section: Strategies Adopted To Enhance Reaction Kinetics In Solar Watmentioning
confidence: 99%
“…7b). This method is easy to control and repeat, and many exciting results have been reported based on it [36,68].…”
Section: Wet Chemical Depositionmentioning
confidence: 99%
“…Recently,K im and Choi investigatedaZnFe 2 O 4 layer to enhance the stability as well as photoelectrochemical performance of BiVO 4 in basic electrolyte. [47] Thei nitial photocurrent density at 1.23 Vv ersus RHEi ncreased to 2.74 mA cm À2 in KPi (PH 13) electrolyte, but it decreased to less than 2.0 mA cm À2 in less than 1h.Z hong et al reported an impressive long-term stability of their CoO x -loaded BiVO 4 photoanode with ultrathin NiO layer, [48] which showedo nly al ittle decay in performanceo ver 16 hb ut at relatively low applied bias of only 0.8 Vv ersus RHE. Compared with other semiconductors such as TiO 2 ,B iVO 4 is a more efficient photon absorber but is more vulnerable for photocorrosion.…”
Section: Instability Of the Anodementioning
confidence: 99%