Surface Micromachined Microelectromechancial Ohmic Series Switch Using Thin-Film Piezoelectric Actuators

Polcawich, Ronald G.; Pulskamp, Jeffrey S.; Judy, D.C.; Ranade, Prashant; Trolier‐McKinstry, Susan; Dubey, Madan

doi:10.1109/tmtt.2007.910072

Cited by 75 publications

(45 citation statements)

References 18 publications

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“…Devices based on films with self-bias are more robust against depolarization due to temperature or voltage excursions. 22,23 Additionally, the built in bias also decreases dielectric permittivity at zero applied field, as shown in fig. 3(c), which in turn increases the figure of merit (Figure of Merit = e 2 31, f /ε 0 ε r ) for sensors operating in a voltage sensing mode as well as for piezoelectric energy harvesting devices.…”

Section: B Ferroelectric Dielectric and Piezoelectric Propertiesmentioning

confidence: 89%

Effect of fabrication conditions on phase formation and properties of epitaxial (PbMg1/3Nb2/3O3)0.67-(PbTiO3)0.33 thin films on (001) SrTiO3

et al. 2016

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The pulsed laser deposition process of 300nm thick films of Pb(Mg1/3Nb2/3)O3)0.67-(PbTiO3)0.33 on (001)-oriented SrTiO3 was studied by varying deposition pressure, substrate deposition temperature, laser fluence on the target and target-substrate distance. Perovskite phase pure, (001)-oriented, epitaxial smooth films were obtained in a narrow range of deposition parameters. The ferroelectric and dielectric properties of films fabricated within this parameter range still vary significantly. This shows the sensitivity of the system for growth conditions. The best film has a polarization value close to that expected for a (001) poled, stress free single crystal film. All films show deposition conditions dependent variations in the self-bias field. The self-bias is very stable during long cycling for films made at optimum deposition conditions. The piezoelectric coefficients of the films are strongly reduced with respect to bulk single crystal values due to the film clamping. The properties variations are ascribed to changes in the grain boundary properties in which film defects are expected to accumulate. Notably slight off-stoichiometry may cause localized screening charges, affecting specifically the polarization and dielectric constant.

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Section: B Ferroelectric Dielectric and Piezoelectric Propertiesmentioning

confidence: 89%

Effect of fabrication conditions on phase formation and properties of epitaxial (PbMg1/3Nb2/3O3)0.67-(PbTiO3)0.33 thin films on (001) SrTiO3

et al. 2016

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“…Recently, the excellent piezoelectric properties of Pb(Zr x , Ti 1-x )O 3 (PZT) thin films were applied to a piezoelectrically actuated radio frequency (RF) microelectromechanical system (MEMS) switch and a thin film bulk acoustic resonator (TFBAR) [1,2]. As a result of their large dielectric constant properties, PZT thin films can also be used for metal-insulatormetal (MIM) capacitors employed in monolithic microwave integrated circuits (MMICs) [3].…”

Section: Introductionmentioning

confidence: 99%

Characterization of dielectric and acoustic properties of CSD PZT thin films at high frequencies

2012

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In this study, the microwave dielectric and the acoustic properties of Pb(Zr x ,Ti 1-x )O 3 (PZT) thin films deposited using chemical solution deposition (CSD) were investigated using the same measurement setup. High dielectric constants in the range of~280-540 and loss tangents less than 0.1 at 4 GHz were measured, where the value depends on the thickness of the PZT film. The voltage tunability of the 340 nm and 440 nm thick PZT thin films was~34% and 5% for the 140 nm thick PZT film at 120 kV/cm and 4 GHz. The acoustic parameters of the PZT thin films under DC bias voltages were determined using a one-dimensional acoustic wave resonator model. For the PZT films of thicknesses 340 nm and 440 nm, the acoustic resonance frequency shift was about 15 MHz and the electromechanical coupling coefficient was~10% at an electric field of 160 kV/cm. The large dielectric constant and high tunability suggest that the characterized PZT thin films may be suitable for radio frequency (RF) applications such as high-density RF MIM capacitors and other tunable devices.

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“…[9][10][11][12] Out of these two materials, AlN stands out for its high dielectric strength, ease of deposition, and processing ͑involving low temperatures and nontoxic precursors͒, and its potential for integration with CMOS devices. AlN has previously been used for the fabrication of MEMS contour mode filters, 13 film bulk-wave acoustic resonator ͑FBAR͒ filters 14 ͑AlN being the material of choice for commercial FBAR production͒, high frequency resonators, 15 and switches.…”

mentioning

confidence: 99%

Piezoelectric aluminum nitride nanoelectromechanical actuators

Sinha

Wabiszewski

Mahameed

et al. 2009

Applied Physics Letters

151

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Surface Micromachined Microelectromechancial Ohmic Series Switch Using Thin-Film Piezoelectric Actuators

Cited by 75 publications

References 18 publications

Effect of fabrication conditions on phase formation and properties of epitaxial (PbMg1/3Nb2/3O3)0.67-(PbTiO3)0.33 thin films on (001) SrTiO3

Effect of fabrication conditions on phase formation and properties of epitaxial (PbMg1/3Nb2/3O3)0.67-(PbTiO3)0.33 thin films on (001) SrTiO3

Characterization of dielectric and acoustic properties of CSD PZT thin films at high frequencies

Piezoelectric aluminum nitride nanoelectromechanical actuators

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