Surface Leakage in GaN/InGaN Double Heterojunction Bipolar Transistors

We report ultra-high-power performance on npn GaN/InGaN double heterojunction bipolar transistors (DHBTs) that is directly grown on a free-standing (FS) GaN substrate. Measured common-emitter current gain (h fe ) reaches 80. A quasi-static I-V measurement shows that J C > 141 kA/cm 2 and a power density of 3.05 MW/cm 2 can be achieved for DHBTs grown on an FS-GaN substrate. When the temperature is increased to 250 8C, a GaN/InGaN DHBT shows h fe ¼ 43 and the offset voltage is reduced from 0.8 V at the room temperature to 0.3 V. Similarly, the knee voltage is reduced from 5.2 V at room temperature to 2.75 V at 250 8C. In this particular device, breakdown voltage (BV CEO ) increases from 90 V at room temperature to 157 V at 250 8C.

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GaN/InGaN heterojunction bipolar transistors with ultra‐high d.c. power density (>3 MW/cm²)

Lee

Zhang

Lochner

et al. 2012

Physica Status Solidi (a)

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NpN-GaN/InxGa1−xN/GaN heterojunction bipolar transistor on free-standing GaN substrate

Lochner

Kim

Lee

et al. 2011

Applied Physics Letters

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Data and analysis are presented for NpN-GaN/InGaN/GaN double-heterojunction bipolar transistors (HBTs) grown and fabricated on a free-standing GaN (FS-GaN) substrate in comparison to that on a sapphire substrate to investigate the effect of dislocations in III-nitride HBT epitaxial structures. The performance characteristics of HBTs on FS-GaN exhibit a maximum collector current density of ∼12.3 kA/cm2, dc current gain of ∼90, and maximum differential gain of ∼120 without surface passivation, representing a substantial improvement over similar devices grown on sapphire. This is attributed to the reduction in threading dislocation density afforded by using a homoepitaxial growth on a high-crystalline-quality substrate. The minority carrier diffusion length increases significantly owing to not only a mitigated carrier trap effect via fewer dislocations, but also possibly reduced microscopic localized states.

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Working toward high-power GaN/InGaN heterojunction bipolar transistors

Shen¹,

Dupuis²,

Lochner³

et al. 2013

Semicond. Sci. Technol.

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III-nitride (III-N) heterojunction bipolar transistors (HBTs) are a less-explored electronic device technology due to the myriad research issues in material growth, device design and fabrication associated with these devices. For III-N HBTs, npn-GaN/InGaN heterostructures provide the benefits of mitigating the poor base electrical conductivity of p-type GaN and the problematic magnesium incorporation issues. Consequently, InGaN-base III-N HBTs are promising for next-generation high-power RF III-N systems. This paper will describe the current development status of npn GaN/InGaN HBTs grown either on sapphire or free-standing (FS) GaN substrates using optimized metalorganic chemical vapor deposition (MOCVD) and refined HBT processing techniques. Recombination current paths in GaN/InGaN HBTs are studied and small-signal equivalent circuits are developed. The extracted device model indicates that, with further device fabrication technique development, Johnson's figure of merit (JFOM) of GaN/InGaN HBTs can be as high as 5 THz V.

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Surface Leakage in GaN/InGaN Double Heterojunction Bipolar Transistors

Cited by 11 publications

References 18 publications

GaN/InGaN heterojunction bipolar transistors with ultra‐high d.c. power density (>3 MW/cm²)

GaN/InGaN heterojunction bipolar transistors with ultra‐high d.c. power density (>3 MW/cm²)

NpN-GaN/InxGa1−xN/GaN heterojunction bipolar transistor on free-standing GaN substrate

Working toward high-power GaN/InGaN heterojunction bipolar transistors

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Surface Leakage in GaN/InGaN Double Heterojunction Bipolar Transistors

Cited by 11 publications

References 18 publications

GaN/InGaN heterojunction bipolar transistors with ultra‐high d.c. power density (>3 MW/cm2)

GaN/InGaN heterojunction bipolar transistors with ultra‐high d.c. power density (>3 MW/cm2)

NpN-GaN/InxGa1−xN/GaN heterojunction bipolar transistor on free-standing GaN substrate

Working toward high-power GaN/InGaN heterojunction bipolar transistors

Contact Info

Product

Resources

About

GaN/InGaN heterojunction bipolar transistors with ultra‐high d.c. power density (>3 MW/cm²)

GaN/InGaN heterojunction bipolar transistors with ultra‐high d.c. power density (>3 MW/cm²)