Surface/interface analysis and optical properties of RF sputter-deposited nanocrystalline titanium nitride thin films

White, Nathan A.; Campbell, Angela; Grant, John T.; Pachter, Ruth; Eyink, Kurt G.; Jakubiak, Rachel; Martínez, Gerardo; Ramana, C. V.

doi:10.1016/j.apsusc.2013.11.078

Cited by 53 publications

(44 citation statements)

References 64 publications

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“…As the intensities of Ti 2p increase alongside Ti content in the targets, the peak positions shift from 459.1 to 458.7 eV, with the BE position remaining constant at higher Ti concentrations ( 10 wt.% in the target). The corresponding well with reported values for stoichiometric TiO 2[14,[42][43][44][45][46]. The spin-orbit splitting of the Ti 2p doublet is ~5.8 eV, which is also in good agreement with the reported values in the literature indicating that Ti exists in its highest oxidation state of 4+[42][43][44][45][46].…”

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confidence: 91%

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Effect of W–Ti target composition on the surface chemistry and electronic structure of WO3–TiO2 films made by reactive sputtering

Vargas

López

Murphy

et al. 2015

Applied Surface Science

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A c c e p t e d M a n u s c r i p t 2 Highlights  An approach to fabricate WO 3 -TiO 2 thin films using W-Ti alloy target is presented. The effect of W-Ti ratio on the surface chemistry of W-Ti-O oxide films is evaluated. Increasing Ti decreases W-Ti-O film thickness drastically due to sputtering kinetics. Optimum conditions to deposit stoichiometric WO 3 -TiO 2 films are reported. ABSTRACTTungsten-titanium (W-Ti) mixed oxide thin films were fabricated using reactive sputtering of W-Ti alloy targets with Ti content ranging from 0 to 30 wt.%. The effect of target composition on film structure, surface/interface chemistry and chemical valence state of the W and Ti cations was investigated in detail. All films were amorphous in nature as confirmed by X-ray diffraction analyses. For growth times of 1 hour, the thicknesses of the W-Ti-O films decreased significantly from 150 nm to 35 nm with increasing Ti content in the target, confirming that the oxide film growth behavior is dependent on the sputter-target composition.The chemistry and composition of the films probed using X-ray photoelectron spectroscopy (XPS) confirms the existence of W and Ti in their highest oxidation states of 6+ and 4+, respectively. Quantification of binding energy shifts for W and Ti core-level transitions confirms the formation of WO 3 -TiO 2 composite oxide films. Depth profiles confirm and validate film uniformity, as well as film thickness differences and variable oxidation behavior of W and Ti in the films.

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confidence: 91%

“…The binding energies (BE) for the O 1s transition corresponding to binding energy shifts associated with WO 3 , were located at 530.7 eV. As the Ti content within the target was increased, the peak position shifted from 530.7 eV to 530.5 eV resulting from lattice oxygen bonding with both W and Ti [42,43].…”

Section: Chemical Compositionmentioning

confidence: 99%

Effect of W–Ti target composition on the surface chemistry and electronic structure of WO3–TiO2 films made by reactive sputtering

Vargas

López

Murphy

et al. 2015

Applied Surface Science

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“…The very attractive physical and chemical properties of titanium nitrides (TiN) make them very efficient for a great number of applications [1][2][3][4][5][6][7][8][9][10][11]. TiN exhibits a high melting point of 3220 K greater than those of ceramic materials such as Al 2 O 3 or Si 3 N 4 .…”

Section: Introductionmentioning

confidence: 99%

“…Titanium nitrides are synthesized by various processes such as DC or RF magnetron sputtering [1,3,4,16,21,22], pulsed laser irradiation [23] . .…”

Section: Introductionmentioning

confidence: 99%

Silicides and Nitrides Formation in Ti Films Coated on Si and Exposed to (Ar-N2-H2) Expanding Plasma

et al. 2017

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Abstract:The physical properties including the mechanical, optical and electrical properties of Ti nitrides and silicides are very attractive for many applications such as protective coatings, barriers of diffusion, interconnects and so on. The simultaneous formation of nitrides and silicides in Ti films improves their electrical properties. Ti films coated on Si wafers are heated at various temperatures and processed in expanding microwave (Ar-N 2 -H 2 ) plasma for various treatment durations. The Ti-Si interface is the centre of Si diffusion into the Ti lattice and the formation of various Ti silicides, while the Ti surface is the centre of N diffusion into the Ti film and the formation of Ti nitrides. The growth of silicides and nitrides gives rise to two competing processes which are thermodynamically and kinetically controlled. The effect of thickness on the kinetics of the formation of silicides is identified. The metastable C 49 TiSi 2 phase is the main precursor of the stable C 54 TiSi 2 phase, which crystallizes at about 600 • C, while TiN crystallizes at about 800 • C.

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“…[1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18] Since the very first successful commercialization of TiN, the field of nitrides has become widespread and diversified to include other complex applications such as automotive, aerospace, microelectronics, and biomedical technologies. [15][16][17][18][19][20] However, rapid progress made coupled with ever increasing demand for performance and efficiency enhancement and current nanotechnology challenges are the prime factors constantly driving the thrust to design new coating materials and/or new architectures to further improve the properties and high-temperature stability of the coatings. 6,[8][9][10][11][12][13][14][15] Many of the modern engineering applications require tuning the toughness (K IC ) without sacrificing the hardness (H) of the coating.…”

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Toughness enhancement in zirconium-tungsten-nitride nanocrystalline hard coatings

et al. 2016

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An approach is presented to increase the toughness (KIC) while retaining high hardness (H) of Zr-W-N nanocrystalline coatings using energetic ions bombardment. Tuning KIC and H values was made possible by a careful control over the substrate bias, i.e., the kinetic energy (Uk∼9-99 J/cm3) of the bombarding ions, while keeping the deposition temperature relatively low (200 oC). Structural and mechanical characterization revealed a maximum wear resistance (H/Er∼0.23) and fracture toughness (KIC∼2.25 MPam) of ZrWN coatings at Uk∼72 J/cm3. A direct Uk-microstructure-KIC-H relationship suggests that tailoring mechanical properties for a given application is possible by tuning Uk and, hence, ZrWN-coatings’ microstructure.

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Surface/interface analysis and optical properties of RF sputter-deposited nanocrystalline titanium nitride thin films

Cited by 53 publications

References 64 publications

Effect of W–Ti target composition on the surface chemistry and electronic structure of WO3–TiO2 films made by reactive sputtering

Effect of W–Ti target composition on the surface chemistry and electronic structure of WO3–TiO2 films made by reactive sputtering

Silicides and Nitrides Formation in Ti Films Coated on Si and Exposed to (Ar-N2-H2) Expanding Plasma

Toughness enhancement in zirconium-tungsten-nitride nanocrystalline hard coatings

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