Surface gate and contact alignment for buried, atomically precise scanning tunneling microscopy–patterned devices

Fuechsle, Martin; Rueß, Frank J.; Reusch, T. C. G.; Mitic, M.; Simmons, M. Y.

doi:10.1116/1.2781512

Cited by 20 publications

(18 citation statements)

References 22 publications

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“…19 We developed a drift correction method that calculates a translational mismatch parameter between sequential scans followed by the application of an intelligent correction factor. Image drift is an accepted feature in STM imaging.…”

Section: Pattern Placementmentioning

confidence: 99%

Atomic precision lithography on Si

Randall

Lyding²,

Schmucker

et al. 2009

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Lithographic precision is as or more important than resolution. For decades, the semiconductor industry has been able to work with Ϯ5% precision. However, for other applications such as micronanoelectromechanical systems, optical elements, and biointerface applications, higher precision is desirable. Lyding et al. ͓Appl. Phys. Lett. 64, 11 ͑1999͔͒ have demonstrated that a scanning tunneling microscope can be used to remove hydrogen ͑H͒ atoms from a silicon ͑100͒ 2 ϫ 1 H-passivated surface through an electron stimulated desorption process. This can be considered e-beam lithography with a thin, self-developing resist. Patterned hydrogen layers do not make a robust etch mask, but the depassivated areas are highly reactive since they are unsatisfied covalent bonds and have been used for selective deposition of metals, oxides, semiconductors, and dopants. The depassivation lithography has shown the ability to remove single H atoms, suggesting the possibility of precise atomic patterning. This patterning process is being developed as part of a project to develop atomically precise patterned atomic layer epitaxy of silicon. However, significant challenges in sample preparation, tip technology, subnanometer pattern placement, and patterning throughput must be overcome before an automated atomic precision lithographic technology evolves.

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Section: Pattern Placementmentioning

confidence: 99%

Atomic precision lithography on Si

Randall

Lyding²,

Schmucker

et al. 2009

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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show abstract

“…First, the resist in HDL is a H passivation monolayer enabling digital single atom precision, 5,10 in contrast to the need for patterning a thick resist layer in e-beam other charged particle lithographies. 24 Scale-up pathways similar to IBM's "millipede" 25 or hybrid HDL/ e-beam lithography 26 systems remain a possibility. 23 One critical disadvantage of the method described here is slow initial patterning time, with pattern speeds below 1 lm 2 /min possible (and much slower in the highest resolution modes), in contrast to e-beam lithography that can pattern at rates of 8-33 lm 2 /min.…”

Section: Introductionmentioning

confidence: 99%

Pattern transfer of hydrogen depassivation lithography patterns into silicon with atomically traceable placement and size control

Ballard

Owen

et al. 2014

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Articles you may be interested inSub-20nm silicon patterning and metal lift-off using thermal scanning probe lithography Reducing the scale of etched nanostructures below the 10 nm range eventually will require an atomic scale understanding of the masks being used in order to maintain exquisite control over both feature size and feature density. Here, the authors demonstrate a method for tracking atomically resolved and controlled structures from initial template definition through final nanostructure metrology, opening up a pathway for top-down atomic control over nanofabrication. First, hydrogen depassivation lithography is performed on hydrogen terminated Si(100) using a scanning tunneling microscope, which spatially defined chemically reactive regions. Next, atomic layer deposition of titanium dioxide produces an etch-resistant hard mask pattern on these regions. Reactive ion etching then transfers the mask pattern onto Si with pattern height of 17 nm, critical dimension of approximately 6 nm, and full-pitch down to 13 nm. The effects of linewidth, template atomic defect density, and line-edge roughness are examined in the context of controlling fabrication with arbitrary feature control, suggesting a possible critical dimension down to 2 nm on 10 nm tall features. A metrology standard is demonstrated, where the atomically resolved mask template is used to determine the size of a nanofabricated sample showing a route to image correction.

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“…Quantum devices in silicon have been the subject of concentrated recent interest, both experimental and theoretical, including the recent discussion of Ohm’s law at the nanoscale [16]. Efforts to make such devices have led to atomically precise fabrication methods which incorporate phosphorus atoms in a single monolayer of a silicon crystal [17-20]. These dopant atoms can be arranged into arrays [21] or geometric patterns for wires [16,22] and associated tunnel junctions [23], gates, and quantum dots [24,25] - all of which are necessary components of a functioning device [26].…”

Section: Introductionmentioning

confidence: 99%

Ab initio calculation of valley splitting in monolayer δ-doped phosphorus in silicon

et al. 2013

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The differences in energy between electronic bands due to valley splitting are of paramount importance in interpreting transport spectroscopy experiments on state-of-the-art quantum devices defined by scanning tunnelling microscope lithography. Using vasp, we develop a plane-wave density functional theory description of systems which is size limited due to computational tractability. Nonetheless, we provide valuable data for the benchmarking of empirical modelling techniques more capable of extending this discussion to confined disordered systems or actual devices. We then develop a less resource-intensive alternative via localised basis functions in siesta, retaining the physics of the plane-wave description, and extend this model beyond the capability of plane-wave methods to determine the ab initio valley splitting of well-isolated δ-layers. In obtaining an agreement between plane-wave and localised methods, we show that valley splitting has been overestimated in previous ab initio calculations by more than 50%.

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Surface gate and contact alignment for buried, atomically precise scanning tunneling microscopy–patterned devices

Abstract: Local photocurrent mapping as a probe of contact effects and charge carrier transport in semiconductor nanowire devices J.

Cited by 20 publications

References 22 publications

Atomic precision lithography on Si

Atomic precision lithography on Si

Pattern transfer of hydrogen depassivation lithography patterns into silicon with atomically traceable placement and size control

Ab initio calculation of valley splitting in monolayer δ-doped phosphorus in silicon

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