2018
DOI: 10.1002/adfm.201706231
|View full text |Cite
|
Sign up to set email alerts
|

Surface‐Functionalization‐Mediated Direct Transfer of Molybdenum Disulfide for Large‐Area Flexible Devices

Abstract: The transfer of synthesized large‐area 2D materials to arbitrary substrates is expected to be a vital step for the development of flexible device fabrication processes. The currently used hazardous acid‐based wet chemical etching process for transferring large‐area MoS2 films is deemed to be unsuitable because it significantly degrades the material and damages growth substrates. Surface energy‐assisted water‐based transfer processes do not require corrosive chemicals during the transfer process; however, the c… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1
1

Citation Types

3
67
0
2

Year Published

2018
2018
2023
2023

Publication Types

Select...
6
1

Relationship

2
5

Authors

Journals

citations
Cited by 70 publications
(72 citation statements)
references
References 39 publications
3
67
0
2
Order By: Relevance
“…The FETs shown in Figure 4d Figure 4g. Although pulsed-MOCVD-grown MoS 2 has a relatively small grain size, its device performance is comparable to that of other CVDgrown MoS 2 even with a larger grain size [16,17,23,24,[34][35][36] due to the damage-free transfer method. Notably, the µ FE can be further improved by optimizing the film quality and device structure including the contact between metal and MoS 2 .…”
Section: Doi: 101002/adma202003542mentioning
confidence: 94%
See 2 more Smart Citations
“…The FETs shown in Figure 4d Figure 4g. Although pulsed-MOCVD-grown MoS 2 has a relatively small grain size, its device performance is comparable to that of other CVDgrown MoS 2 even with a larger grain size [16,17,23,24,[34][35][36] due to the damage-free transfer method. Notably, the µ FE can be further improved by optimizing the film quality and device structure including the contact between metal and MoS 2 .…”
Section: Doi: 101002/adma202003542mentioning
confidence: 94%
“…[15] Regarding the production of wafer-scale films, metal-organic chemical vapor deposition (MOCVD) based on gas-phase precursors is particularly promising, owing to the uniform and precisely controlled supply of precursors over the entire substrate. [16,17] For preparing wafer-scale monolayers by MOCVD, secondary nucleation on the pre-synthesized TMDs should be suppressed during growth. This has been successfully achieved by growing TMDs under an extremely low partial pressure of sources to approach the adsorption/desorption equilibrium.…”
Section: Doi: 101002/adma202003542mentioning
confidence: 99%
See 1 more Smart Citation
“…Transition metal dichalcogenides (TMDs) such as MoS 2 are attracting interest, as such materials possess comparable or superior characteristics to graphene, including good optical transparency, outstanding mechanical flexibility, and good electrical properties [ 124 , 125 , 126 , 127 , 128 , 129 , 130 , 131 , 132 , 133 , 134 , 135 , 136 ]. In particular, ultrathin MoS 2 semiconductors with high sensitivity and a tunable band gap are strong candidate materials that can be used to produce advanced tactile sensors with good conformability [ 18 ].…”
Section: Novel Materialsmentioning
confidence: 99%
“…Flexible printed electronics aim to minimize material waste and production costs, which was considered as an effective way to reduce carbon dioxide emissions during manufacturing [1,2]. With the development of nanomaterials and nanotechnology, various kinds of printing pastes ranging from conductors, insulators, and semiconductors comprised of nanostructures have been developed and utilized for solar cells [3], touch screens [4], transistors [5], sensors [6,7], and elastic/flexible devices [8,9]. Additionally, flexibility and stretchable properties are considered as the key parameters of flexible devices [10].…”
Section: Introductionmentioning
confidence: 99%