Surface enhancement of CdSe by SiO<sub>2</sub>

Swystun, E.J.

doi:10.1049/el:19670363

Cited by 5 publications

(2 citation statements)

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“…It was reported [20,21] that the thermal evaporation of a SiO x layer onto a CdSe film may produce an accumulation layer at the SiO x -CdSe interface, thus causing a Fermi-level shift upwards in the interface region of the CdSe film. It was also found [21] that, in the accumulation layer, the room temperature conductivity is more than a hundred times higher than that in the bulk of the film.…”

Section: Charge Transport In Sio X -Cdse Composite Filmsmentioning

confidence: 99%

“…Now, we return to the above-mentioned peculiarity that dark conductivity measured in SiO x /CdSe MLs is considerably lower than that of the respective composite films having CdSe NCs of the same average size (compare table 1 and table 2). It has been observed [20] that the thinner the SiO x layer deposited on the CdSe film, the weaker the accumulation effect in the CdSe interface region. Bearing this result in mind, we assume that the very thin (2.5-10 nm) SiO x sublayers of SiO x /CdSe MLs have no accumulation effect on the CdSe sublayers, while the much thicker (20-100 nm) SiO x 'sublayers' in the SiO x -CdSe composite films strongly affect the CdSe NC conductivity.…”

Section: Charge Transport In Sio X -Cdse Composite Filmsmentioning

confidence: 99%

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Charge transport in CdSe nanocrystalline sublayers of SiO_x/CdSe multilayers and composite SiO_x-CdSe thin films

Nesheva¹,

Levi

Pamukchieva

2000

J. Phys.: Condens. Matter

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Dark-current measurements have been carried out on SiOx/CdSe multilayers and composite SiOx-CdSe thin films having varying CdSe sublayer thicknesses and average nanocrystal sizes and, for comparison, on SiOx and CdSe single layers. Size-induced changes in room temperature conductivity and dark-current activation energy at temperatures T > 320 K have been observed in both multilayers and composite films. The high-resolution electron microscopy studies performed have shown that: (i) the CdSe sublayers in the multilayers are nanocrystalline with nanocrystallite size equal to the sublayer thickness; and (ii) the CdSe nanocrystals in the composite films are disposed in SiOx-CdSe `sublayers' having high CdSe volume fractions. The conclusion has been reached that in both multilayers and composite films charge transport, in the layer plane, involves networks of CdSe nanocrystals contacting each other. It has been found that in the SiOx/CdSe multilayers charge transport is controlled by potential barriers for electrons existing at the CdSe nanocrystal interface and that the barrier height does not exceed 0.25 eV. In the SiOx-CdSe composite films the potential barriers at the CdSe-CdSe interface do not appreciably affect the charge transport, due to the great conductivity increase, induced by the SiOx matrix. The observed size-induced changes in the dark conductivity and dark-current activation energy in these films have been attributed to an upward quantum-size shift of the conduction band bottom in CdSe nanocrystals.

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Section: Charge Transport In Sio X -Cdse Composite Filmsmentioning

confidence: 99%

Section: Charge Transport In Sio X -Cdse Composite Filmsmentioning

confidence: 99%

Charge transport in CdSe nanocrystalline sublayers of SiO_x/CdSe multilayers and composite SiO_x-CdSe thin films

Nesheva¹,

Levi

Pamukchieva

2000

J. Phys.: Condens. Matter

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Defect states in CdSe nanocrystalline layers

Nesheva

Reynolds

Main

et al. 2005

Physica Status Solidi (a)

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Defect states and recombination processes are investigated in SiOx/nanocrystalline CdSe multilayer and composite films, and CdSe single films, using steady‐state and transient photoconductivity and thermally‐stimulated current measurements. A reduction in mobility‐lifetime product as layer thickness is reduced is assigned to increased deep defect density at the nanocrystal surface. Transient photocurrent falls rapidly at typically 0.1 µs as carriers are trapped in deep states, and then continues to fall as a power law of index close to –1. At elevated temperatures, the transient current in multilayer films falls below the steady‐state dark current. This is explained by the effect of potential barrier profiles on recombination. The density of states distribution obtained is fairly broad in multilayers and composite films while in single layer films it is noticeably peaked. Two defect bands located at 0.55 and 0.7 eV below the conduction band edge are identified, the former associated with the nanocrystal bulk and the latter with the CdSe–CdSe interface. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Electron transport studies in space charge layers in vapour-deposited CdSeSiOx films

Jäniche

Berger

1972

Thin Solid Films

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Surface enhancement of CdSe by SiO₂

Cited by 5 publications

References 2 publications

Charge transport in CdSe nanocrystalline sublayers of SiO_x/CdSe multilayers and composite SiO_x-CdSe thin films

Charge transport in CdSe nanocrystalline sublayers of SiO_x/CdSe multilayers and composite SiO_x-CdSe thin films

Defect states in CdSe nanocrystalline layers

Electron transport studies in space charge layers in vapour-deposited CdSeSiOx films

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Surface enhancement of CdSe by SiO2

Cited by 5 publications

References 2 publications

Charge transport in CdSe nanocrystalline sublayers of SiOx/CdSe multilayers and composite SiOx-CdSe thin films

Charge transport in CdSe nanocrystalline sublayers of SiOx/CdSe multilayers and composite SiOx-CdSe thin films

Defect states in CdSe nanocrystalline layers

Electron transport studies in space charge layers in vapour-deposited CdSeSiOx films

Contact Info

Product

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Surface enhancement of CdSe by SiO₂

Charge transport in CdSe nanocrystalline sublayers of SiO_x/CdSe multilayers and composite SiO_x-CdSe thin films

Charge transport in CdSe nanocrystalline sublayers of SiO_x/CdSe multilayers and composite SiO_x-CdSe thin films