Surface engineering of nanoporous substrate for solid oxide fuel cells with atomic layer-deposited electrolyte

Abstract

SummarySolid oxide fuel cells with atomic layer-deposited thin film electrolytes supported on anodic aluminum oxide (AAO) are electrochemically characterized with varying thickness of bottom electrode catalyst (BEC); BECs which are 0.5 and 4 times thicker than the size of AAO pores are tested. The thicker BEC ensures far more active mass transport on the BEC side and resultantly the thicker BEC cell generates ≈11 times higher peak power density than the thinner BEC cell at 500 °C.

Multifunctional MXene/Carbon Nanotube Janus Film for Electromagnetic Shielding and Infrared Shielding/Detection in Harsh Environments

“…CNT film was synthesized through a modified chemical vapor deposition method [ 64 ]. In this synthesis, a precursor solution was prepared by mixing ferrocene (Fe(C 5 H 5 ) 2 , 0.2 wt%, 98% purity), thiophene (C 4 H 4 S, 0.8 wt%, 99% purity), (C 3 H 6 O, 98.0%, 99.7% purity), and polysorbate (1 wt%) [ 65 , 66 ]. The resulting mixture was injected into a vertically oriented reactor heated to 1250 °C at a rate of 10 mL h − 1 .…”

Review on process-microstructure-performance relationship in ALD-engineered SOFCs

“…However, the cell performance was very low (<1 mW cm −2 at 550°C) due to physical defects induced by the chemical etching process leading to chemical shorting through the electrolyte. ALD YSZ electrolytes on a nanoporous substrate ALD thin films have also been widely employed as dense electrolytes for nanoporous substrates (e.g., anodized aluminum-oxide (AAO))-based MEA designs [59][60][61][62][63][64][65][66][67][68][69][70][71]. In 2011, ALD Al 2 O 3 , which is not an ionic conductor, was used to fabricate gas-tight electrolytes by physically filling pinholes and voids.…”

“…In this study, pinholes could be avoided even with a much thinner electrolyte using ALD-fabricated YSZ as compared to sputtered YSZ-only electrolytes (0.5-1 μm) for a perfect gas permeation block with high OCV value of about 1.05 V. By optimizing the thickness of an ALD-fabricated YSZ-only electrolyte, they achieved 5.5 times higher performance than the cell with a 500 nm thick layer. The optimal thickness of the YSZonly layer for perfect gas permeation blocking varied depending on the anode thicknesses [65] and density (porous or dense) [66]. Recently, the use of a 25 nm-thick ALD YSZ layer to prepare a sputtered SDC-ALD YSZsputtered SDC sandwich structured electrolyte (figure 2(e)) was reported.…”

Normally-off recessed-gate AlGaN/GaN MOS-HFETs with plasma enhanced atomic layer deposited AlO x N y gate insulator

“…The Al 2 O 3 deposition process was optimized on n-type Si substrates using a commercial direct plasma enhanced ALD (PEALD) system (CN1 Co., Korea) [15,16] with a showerhead injector. The top electrode for showerhead was capacitively coupled with a RF (13.56 MHz) plasma source, and the lower electrode for chuck was grounded.…”