Surface Engineering of Materials for Beyond-Microelectronics

Abstract

All oxide heterostructure Cr2O3/TiO2-x was deposited on Al2O3(0001) single crystal via MBE. The analysis of interfacial interactions involving two metal oxides resulting in magnetic properties gave insights for using such heterostructures as potential spintronic device materials. The corundum phase epitaxial growth of TiO2-x on Al2O3 was characterized using XPS, AES, EELS, and LEED. The data obtained gives evidence of presence of two-dimensional electron gas at titania surface due to oxygen vacancies formation after deposition. On titania, the deposition of chrome in UHV results in the formation of oxidized chromia overlayer by abstraction of oxygen from the TiO2-x underlayer further increasing the number of vacancies present. In industrial R&D project, dry etching of multiple optical device components was performed using a novel angled etch prototype tool. The first set of experiments involved plasma etching of SiC thin films optimized for target application. The best-known method (BKM) worked from 300mm full wafer to 200mm product. In second experimentation, a variety of gray-tone photoresist received from customers were etched using BKM. Customer received etch rate on each gray-tone material. The third experiments compared recipe R1 to test recipe R2 on the test vehicle VDC. R2 showed faster etch rate but lower process repeatability (RMSE%). With continuous improvement of the tool and the process, two tools are operating products every day, a third prototype tool is about to be in pilot production.