Surface engineering of ferroelectric polymer for the enhanced electrical performance of organic transistor memory

Abstract

We suggest a viable surface control method to improve the electrical properties of organic nonvolatile memory transistors. For viable surface control, the surface of the ferroelectric insulator in the memory field-effect transistors was modified using a smooth-contact-curing process. For the modification of the ferroelectric polymer, during the curing of the ferroelectric insulators, the smooth surface of a soft elastomer contacts intimately with the ferroelectric surface. This smooth-contact-curing process reduced the surface roughness of the ferroelectric insulator without degrading its ferroelectric properties. The reduced roughness of the ferroelectric insulator increases the mobility of the organic field-effect transistor by approximately eight times, which results in a high memory on-off ratio and a low-voltage reading operation.

Solution‐Processed Dual Gate Ferroelectric–Ferroelectric Organic Polymer Field‐Effect Transistor for the Multibit Nonvolatile Memory

“…The mobilities are much greater than the reported high-vacuum processed pentacene-based ferroelectric memory transistors with mobilities ranging within (10 −2 -10 −3 ) cm 2 V −1 s −1 . [27,31,32] Both devices showed nanoscale ferroelectric gate-current (I GS ) between the source and gate electrodes across the P(VDF-TrFE) gate-insulator measured simultaneously with transfer hysteresis curves (see Figure S4 in the Supporting Information). The characteristic ±I GS peaks arising from the dipole switching were observed at approximately ±35 V for both the DG Fe-FeMT and SG TC FeFET corresponding to the respective coercive voltages of the P(VDF-TrFE) films.…”