2018
DOI: 10.7567/jjap.57.05gc03
|View full text |Cite
|
Sign up to set email alerts
|

Surface engineering of ferroelectric polymer for the enhanced electrical performance of organic transistor memory

Abstract: We suggest a viable surface control method to improve the electrical properties of organic nonvolatile memory transistors. For viable surface control, the surface of the ferroelectric insulator in the memory field-effect transistors was modified using a smooth-contact-curing process. For the modification of the ferroelectric polymer, during the curing of the ferroelectric insulators, the smooth surface of a soft elastomer contacts intimately with the ferroelectric surface. This smooth-contact-curing process re… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Year Published

2021
2021
2021
2021

Publication Types

Select...
1

Relationship

0
1

Authors

Journals

citations
Cited by 1 publication
(1 citation statement)
references
References 29 publications
0
1
0
Order By: Relevance
“…The mobilities are much greater than the reported high-vacuum processed pentacene-based ferroelectric memory transistors with mobilities ranging within (10 −2 -10 −3 ) cm 2 V −1 s −1 . [27,31,32] Both devices showed nanoscale ferroelectric gate-current (I GS ) between the source and gate electrodes across the P(VDF-TrFE) gate-insulator measured simultaneously with transfer hysteresis curves (see Figure S4 in the Supporting Information). The characteristic ±I GS peaks arising from the dipole switching were observed at approximately ±35 V for both the DG Fe-FeMT and SG TC FeFET corresponding to the respective coercive voltages of the P(VDF-TrFE) films.…”
Section: Memory Characteristics Of Single Gate Fefet and Dg Fe-femtmentioning
confidence: 99%
“…The mobilities are much greater than the reported high-vacuum processed pentacene-based ferroelectric memory transistors with mobilities ranging within (10 −2 -10 −3 ) cm 2 V −1 s −1 . [27,31,32] Both devices showed nanoscale ferroelectric gate-current (I GS ) between the source and gate electrodes across the P(VDF-TrFE) gate-insulator measured simultaneously with transfer hysteresis curves (see Figure S4 in the Supporting Information). The characteristic ±I GS peaks arising from the dipole switching were observed at approximately ±35 V for both the DG Fe-FeMT and SG TC FeFET corresponding to the respective coercive voltages of the P(VDF-TrFE) films.…”
Section: Memory Characteristics Of Single Gate Fefet and Dg Fe-femtmentioning
confidence: 99%