Surface-engineered Mo2C: an ideal electrode for 2D semiconductor-based complementary circuit with Schottky-barrier-free contacts

Surface-engineered Mo2B: a promising electrode material for constructing Ohmic contacts with blue phosphorene for electronic device applications

“…The strong orbital coupling causes BP to metallize, which indicates that a chemical bond is highly likely to form between BP and Mo 2 B. 46 While the BP contacts with Mo 2 BO 2 and Mo 2 B(OH) 2 , the band structure is well preserved, as shown in Fig. 4(b) and (c).…”

“…2(a)-(c), the red line's width exhibits the number of electronic states, where wider lines correspond to a higher quantity of electronic states. 46 It is evident from the figure that a great quantity of electronic states exist at the vicinity of the Fermi level in the band structure, indicating good electrical conductivity of the metal and making it an excellent candidate for metal electrodes. 47,48 When O is terminated with the surface of Mo 2 B, its work function sharply increases to 7.46 eV, more than the ionization energy (6.26 eV) of BP, and a p-type contact could be obtained.…”

DFT Simulation of a Gold Electrode Vapor-Deposition Growth Process and the Effect of Defects on the Electrode Work Function

“…While 2D semiconductors are explored as FET channel materials, the challenge arising from electrical contact with 2D materials draws even more attention than that from 2D channel materials themselves. − Different from the bulk semiconductors, atomically thin 2D materials cannot put up with high doping, which will make the 2D material properties change, to reach Ohmic contact. Direct electrical contact with 2D materials leads to large contact resistance, which is harmful to the realization of the 2D FET.…”