Surface Energy Mediated Sulfur Vacancy of ZnIn₂S₄ Atomic Layers for Photocatalytic H₂O₂ Production

Abstract

Constructing rich defect active site structure for material design is still a great challenge. Herein, a simple surface engineering strategy is demonstrated to construct one‐unit‐cell ZnIn2S4 atomic layers with the modulated surface energy of S vacancy. Rich surface energy can regulate and control the rich S vacancy, which ensures rich active sites, higher charge density and effective carrier transport. As a result, the ZnIn2S4 atomic layers with rich surface energy affords an obvious enhancement in H2O2 productive rate of 1592.04 µmol g−1 h−1, roughly 14.58 times superior to that with poor surface energy. Moreover, the in situ infrared diffuse reflection spectrum indicates that S vacancy as the oxygen reduction reaction active site is responsible for the critical intermediate *O2− and *OOH, corresponding to two‐electron oxygen reduction reaction. This study provides a valuable insight and guidance for constructing controllably defects to achieve highly efficient H2O2 production.

Photothermal Synergistic Catalysis over Defective Zn3In2S6 for CO2 Fixation

“…Furthermore, the low-temperature electron paramagnetic resonance (EPR) technique was used to gain insight for vacancies. As shown in Figure j, the EPR signal ( g = 2.003) confirms the presence of unpaired electrons, which is broadly ascribed to S vacancies. − Inductively coupled plasma optical emission spectroscopy (ICP-OES), XPS, and SEM-energy dispersive X-ray spectroscopy (EDX) also confirm the deficiency of sulfur elements in Zn 3 In 2 S 6 -C3 (Figure S2 and Table S1).…”

Polydopamine-Loaded ZnIn2S4 Photocatalyst for H2O2 Production in Water

“…The positive slope of the M–S diagram indicates that ZIS/PDA 0.1 is an n-type semiconductor. For n-type semiconductors, the conduction band (CB) potential (E CB ) is generally 0–0.2 eV lower than the E fb . Locating E fb at 0.1 eV, the CB positions of PDA, ZIS, and ZIS/PDA 0.1 are −0.84, −0.73, and −1.05 eV (vs NHE), respectively.…”

“…For n-type semiconductors, the conduction band (CB) potential (E CB ) is generally 0−0.2 eV lower than the E fb . 43 Locating E fb at 0.1 eV, the CB positions of PDA, ZIS, and ZIS/ PDA 0.1 are −0.84, −0.73, and −1.05 eV (vs NHE), respectively. From this, the valence band (VB) positions of PDA, ZIS, and ZIS/PDA 0.1 can be calculated as +0.78, +1.74, and +1.35 eV (vs NHE), respectively (Figure S6).…”

Recent advances in photocatalytic hydrogen evolution of AgIn5S8‐based photocatalysts

“…[89] Moreover, the deeply researched photocatalyst of ZnIn 2 S 4 with sulfur vacancies has also been applied in photocatalytic H 2 O 2 production. [104] Guided by these, future researches of AgIn 5 S 8 can pay more attention to vacancy introduction, including the Ag, In, and S vacancies, which is a key point to effectively improve the activity of PHE. Note: (a) Synthesized by one-pot hydrothermal method.…”