Surface emitting 1.3 μm SL-QW InGaAsP/InP ridge-waveguide laser diodes with monolithic integrated microlens

Monolithically Lens-Integrated Photonic Device Arrays for Compact Optical Transceivers

“…Although there had been initial attempts to integrate a monolithic InP lens with a horizontal-cavity surface-emitting laser, their far-field patterns have highintensity sidelobes, probably due to a deviation of their monolithic lenses or 45 total reflection mirrors from their ideal profiles. 15,16) Monolithic lens integration is also effective for creating high-speed photodiodes, which need a small aperture. There have been several reports on the monolithic integration of a lens with a photodiode, including improvements in fiberalignment tolerance (from 28 to 56 m) of a lens-integrated 1.3-m InGaAs/InP p-i-n photodiode with a junction area of 25-m diameter, 17) and high-speed characteristics (31 GHz) of a lens-integrated 1.55-m InGaAs/InP p-i-n photodiode with a junction area of 25-m diameter.…”