1981
DOI: 10.1103/physrevb.23.6280
|View full text |Cite
|
Sign up to set email alerts
|

Surface electronic structure of TiO2: Atomic geometry, ligand coordination, and the effect of adsorbed hydrogen

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
2

Citation Types

5
101
0
1

Year Published

1997
1997
2023
2023

Publication Types

Select...
9

Relationship

0
9

Authors

Journals

citations
Cited by 302 publications
(109 citation statements)
references
References 30 publications
5
101
0
1
Order By: Relevance
“…When power density is lower than 50 mW/cm 2 , there is little changes in defects concentration; it seems to be a threshold for defects creation. This is consistent with previous observations in contact angle measurements of water on TiO 2 surface during UV irradiation [14]. With higher photon flux, the defects concentration increasing shows a linear relationship with photon flux.…”
Section: Resultssupporting
confidence: 82%
See 1 more Smart Citation
“…When power density is lower than 50 mW/cm 2 , there is little changes in defects concentration; it seems to be a threshold for defects creation. This is consistent with previous observations in contact angle measurements of water on TiO 2 surface during UV irradiation [14]. With higher photon flux, the defects concentration increasing shows a linear relationship with photon flux.…”
Section: Resultssupporting
confidence: 82%
“…It is well established that thermal annealing in UHV usually creates relatively small quanti-ties of point defects (reduced Ti(Ti 3+ )), whereas, Ar + sputtering can produce much higher quantities of defects with mixed Ti oxidation states (Ti 3+ , Ti 2+ , and Ti + ). For ESD and PSD, defects on TiO 2 are usually induced by removing bridging oxygen [14]. Early ESD results show that electron stimulated desorption of oxygen ions (and presumably neutral atoms) on bare TiO 2 is generally initiated by the production of a core hole followed by intra-atomic or inter-atomic Auger decay of holes on Ti or oxygen atoms, respectively, with a threshold at about 30 eV [15].…”
Section: Introductionmentioning
confidence: 99%
“…The band gap of TiO 2 has been measured recently to be 4 eV, 15 which is somewhat larger than the value of 3 eV quoted previously. 54 Here the band gap is computed to be 12 eV. It must be stressed that due to unscreened self-interaction in the exact exchange, HF theory always overestimates band gaps by factors of about 2-4.…”
Section: Resultsmentioning
confidence: 99%
“…1 and we summarize the key features here. The ultraviolet photoemission spectroscopy ͑UPS͒ spectra contain a band-gap feature for reduced samples which is interpreted in terms of occupied states formed from Ti (3d) orbitals, 1,12 a view supported by the resonant behavior of UPS across the range of photon energies corresponding to the Ti 3p-3d excitation threshold. The shift of the Ti (2p) core levels seen in x-ray photoelectron spectroscopy 13 and the lack of surface conductivity also evidence the localized nature of the additional electrons.…”
Section: Introductionmentioning
confidence: 99%