Surface electronic structure of plasma-treated indium tin oxides

Yu, Hao-Miao; Feng, Xianjin; Grozea, D.; Lu, Zheng‐Hong; Sodhi, Rana N.S.; Hor, Ah‐Mee; Aziz, Hany

doi:10.1063/1.1367897

Cited by 190 publications

(104 citation statements)

References 14 publications

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“…The XPS system was equipped with a monochromatic Al Kα source. We took an Au 4f 7/2 peak at 83.86 eV or a C 1s peak at 285.0 eV for energy reference purposes [12,13]. The XPS core-level peaks were deconvolved into their various components by taking an 80% Gaussian and 20% Lorentzian mixed function [13].…”

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confidence: 99%

Investigation of the Ti/Al/Pt/Au and Ti/Au contact materials on the N‐face surface of oxygen doped GaN

Tsai

Chen³

et al. 2014

Phys. Status Solidi C

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Ti/Al/Pt/Au and Ti/Au ohmic contact materials on the N‐face surface of oxygen doped GaN (GaN:O) were investigated by measuring the specific contact resistivity (ρc) with respect to annealing temperature. Ti/Au contact showed good ohmic property in contrast to Ti/Al/Pt/Au contact on the N‐face surface of GaN:O. Based on the x‐ray photoelectron spectroscopy results, we found that the formation of N‐Al bonds with the increase of annealing treatment temperature and the increase of upward band bending near the N‐face GaN:O surface might lead to an increase in the effective Schottky barrier high, resulting in an increase in the ρc of N‐face GaN:O. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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mentioning

confidence: 99%

Investigation of the Ti/Al/Pt/Au and Ti/Au contact materials on the N‐face surface of oxygen doped GaN

Tsai

Chen³

et al. 2014

Phys. Status Solidi C

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“…However, the surface of ITO glass is chemically and physically ill defined, which will degrade the performance as the hole-injecting electrode in OLEDs. Over the past years, many methods were used to treat the surface of ITO [1]- [5], such as ultraviolet-ozone cleaning and oxygen plasma exposure, in order to enhance hole injection [1], [2]. These treatments were effective in removing residual surface contaminants and increasing oxygen content at ITO surface, resulting in the increase of work function to minimize interfacial charge injection barriers.…”

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confidence: 99%

Indium Tin Oxide Modified by Au and Vanadium Pentoxide as an Efficient Anode for Organic Light-Emitting Devices

Zhang

Choy²

2008

IEEE Trans. Electron Devices

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CONVENTIONAL bottom emitting organic light-emitting devices (OLEDs) commonly use conductive indium tin oxide (ITO) as anode because of its high conductivity, transparency, and work function. However, the surface of ITO glass is chemically and physically ill defined, which will degrade the performance as the hole-injecting electrode in OLEDs. Over the past years, many methods were used to treat the surface of ITO [1]- [5], such as ultraviolet-ozone cleaning and oxygen plasma exposure, in order to enhance hole injection [1], [2]. These treatments were effective in removing residual surface contaminants and increasing oxygen content at ITO surface, resulting in the increase of work function to minimize interfacial charge injection barriers.Moreover, the incorporation of injection enhancing interlayer at electrode-organic interfaces has been used as one alternative route to control carrier injection [6] In this brief, we use V 2 O 5 coating on transparent thin Au film as a composite hole-injection layer on ITO anode for bottom emitting OLEDs. The characteristics of bottom emitting OLEDs with the composite anodes of ITO-Au-V 2 O 5 are described. A thin oxide layer V 2 O 5 is used to modify the surface of Au for enhancing the hole injection from Au by the increase of work function to 5.3 eV and thus sequentially improves emission efficiency. The effects of V 2 O 5 layer on the enhancement of electrical properties of the bottom emitting OLEDs are discussed. Ultraviolet and X-ray photoelectron spectroscopy (UPS and XPS, respectively) analysis indicate that the higher work function of ITO/Au/V 2 O 5 (5.3 eV) than ITO/Au (5.0 eV) anode is due to Au surface band bending. Thus, the barrier for hole injection from ITO through Au/V 2 O 5 to the hole transport layer (HTL) is decreased. Our results show that the performance of OLEDs with V 2 O 5 layer is greatly improved compared with the case of only Au layer on the ITO. Interestingly, it is also better than the ITO anode modified by V 2 O 5 device.All devices were fabricated on ITO coated glass with a sheet resistance of 10 Ω/ , and thermally deposited LiF/Al was used as cathode. ITO substrate was cleaned and treated by O 2 plasma. The deposition was carried out at a pressure of less than 3 × 10 −4 Pa without any vacuum break. The organics and metal oxide were evaporated at the rate in a range of 0.3-0.4 nm/s. The Au metals were evaporated at the rate of ∼0.1 nm/s prior to the oxide and organic layer deposition. Al metal was evaporated at the rate of 0.3∼0.5 nm/s. The devices have an emissive area of 3.57 mm

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“…The O1s intensity was deconvoluted into sub-peaks assigned to the following chemical entities: In 2 O 3 at a binding energy of 530.2 eV, SnO 2 at 531.4 eV, and the oxygen-containing organic contaminants (O-C=O and C-O) at 532.8 eV. Due to the low intensity of the hydrocarbon peak, the SnO 2 and (O-C=O and C-O) contributions were fitted with a single component at 532 eV (FWHM = 1.6) (Figure 4a) [21]. Samples which were exposed to the DDPO 4 solution at open circuit potential (Figure 4b) exhibited a C1s peak intensity with two components: a dominant component, C1s(a) at 285.0 eV (assigned to C-C) and a smaller component, C1s(b) at 286.6 eV (assigned to C-O-P).…”

Section: Resultsmentioning

confidence: 99%

Electrically-Assisted Formation and Desorption of Dodecyl Phosphate Self-Assembled Monolayers on Indium Tin Oxide Surfaces

Tang¹,

Antoni²,

Schönbächler

et al. 2006

ECS Trans.

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Molecularly homogenous and hydrophobic surfaces play an important role in a number of technological applications such as tribology and protein/cellular adhesion. Self-assembled monolayers of dodecyl phosphates (DDPO 4 ) have previously been demonstrated to spontaneously form on titanium oxide, producing surfaces with excellent hydrophobic properties. In this paper, we report on the adsorption of DDPO 4 onto a transparent electronic material, indium tin oxide (ITO), under both open circuit and applied potential conditions. We have used two complementary surface characterization techniques: variable angle scanning ellipsometry and contact angle measurements to investigate the adsorption of DDPO 4 on an ITO surface. Under open circuit condition, both methods consistently confirmed the formation of DDPO 4 monolayers on the ITO surface. The presence of an electrical field increased the amount of DDPO 4 adsorbed on the ITO surface. An applied anodic electrical stimulus of 1800 mV resulted in an exponential loss of the monolayer as confirmed by X-ray photoelectron spectroscopy and electrochemical optical waveguide lightmode spectroscopy (EC-OWLS). This electrically stimulated selective adsorption/desorption of DDPO 4 opens up new ways to tailor the physico-chemical properties of surfaces.

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Surface electronic structure of plasma-treated indium tin oxides

Cited by 190 publications

References 14 publications

Investigation of the Ti/Al/Pt/Au and Ti/Au contact materials on the N‐face surface of oxygen doped GaN

Investigation of the Ti/Al/Pt/Au and Ti/Au contact materials on the N‐face surface of oxygen doped GaN

Indium Tin Oxide Modified by Au and Vanadium Pentoxide as an Efficient Anode for Organic Light-Emitting Devices

Electrically-Assisted Formation and Desorption of Dodecyl Phosphate Self-Assembled Monolayers on Indium Tin Oxide Surfaces

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