Surface electronic inhomogeneity of the (001)-SrTiO3:Nb crystal with a terrace-structured morphology

Li, Y.; Sun, J. R.; Zhao, Jg; Shen, B. G.

doi:10.1063/1.4825047

Cited by 8 publications

(4 citation statements)

References 28 publications

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“…[ 9 ] (3 of 9) 1500368 wileyonlinelibrary.com within the range of the expected work function of Nb:STO whose electron affi nity is reported to be ≈4 eV. [ 19 ] This simplifi cation is justifi ed since, according to previous calculations, [ 11 ] most of the space charge region in a similar Fe:STO/Nb:STO junction falls in the Fe-doped side of the junction. It enables modeling the junction as an MIM structure, [ 20 ] wherein the insulator corresponds to the Fe:STO layer.…”

Section: Evmentioning

confidence: 92%

Parallel Band and Hopping Electron Transport in SrTiO₃

Saraf

Riess

Rothschild

2016

Adv Elect Materials

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SrTiO3 (STO) is a model system for studying oxide electronic devices. This work examines the electronic transport through a heterostructure comprising an acceptor (Fe)‐doped STO layer on a donor (Nb)‐doped STO substrate. This is done by fitting the steady‐state current–voltage (I–V) curve measured at ambient temperature to numerical solutions of the drift‐diffusion equations of itinerant (i.e., free) electrons and holes (band conduction) and localized electrons hopping through defect states within the bandgap (hopping conduction). The analysis shows that at reverse bias and small forward bias the current is carried mostly by hopping electrons that give rise to unexpectedly high currents. At forward bias above 1 V, most of the current is due to electron transport through the conduction band. The transition from hopping to band conduction occurs when the quasi Fermi levels of electrons and holes depart from the energy level of the defect states through which the electrons hop. These observations shed new light on the transport properties of STO‐based devices at ambient temperatures wherein ionic defects such as oxygen vacancies are immobile and holes are trapped, for the most part.

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Section: Evmentioning

confidence: 92%

Parallel Band and Hopping Electron Transport in SrTiO₃

Saraf

Riess

Rothschild

2016

Adv Elect Materials

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“…Silicon nanowire FET biosensors were fabricated by using thermal nanoimprint lithography [23] and the mold fabricated by chemical wet etching. Figure 4(a) shows the Si NW FET with the SiO 2 and Al 2 O 3 stack as the gate dielectric layer, and the inset shows the amplified NW with a width of about 50 nm.…”

Section: Si Nw Fets Fabricated By Using Developed Moldmentioning

confidence: 99%

Advanced fabrication of Si nanowire FET structures by means of a parallel approach

Pud

Mayer

et al. 2014

Nanotechnology

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In this paper we present fabricated Si nanowires (NWs) of different dimensions with enhanced electrical characteristics. The parallel fabrication process is based on nanoimprint lithography using high-quality molds, which facilitates the realization of 50 nm-wide NW field-effect transistors (FETs). The imprint molds were fabricated by using a wet chemical anisotropic etching process. The wet chemical etch results in well-defined vertical sidewalls with edge roughness (3σ) as small as 2 nm, which is about four times better compared with the roughness usually obtained for reactive-ion etching molds. The quality of the mold was studied using atomic force microscopy and scanning electron microscopy image data. The use of the high-quality mold leads to almost 100% yield during fabrication of Si NW FETs as well as to an exceptional quality of the surfaces of the devices produced. To characterize the Si NW FETs, we used noise spectroscopy as a powerful method for evaluating device performance and the reliability of structures with nanoscale dimensions. The Hooge parameter of fabricated FET structures exhibits an average value of 1.6 × 10(-3). This value reflects the high quality of Si NW FETs fabricated by means of a parallel approach that uses a nanoimprint mold and cost-efficient technology.

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“…In view of this importance, we conducted a MoS 2 -based resistive switching study in which (001)-oriented Nb:SrTiO 3 (Nb:STO) crystals were chosen as conducting materials. Surface control of Nb:STO has been studied for years, similar to SrTiO 3 (STO) treatment, and its electrical properties can be easily controlled by varying the dopant concentration. − In this work, we studied resistive switching of 2D MX 2 materials on SrTiO 3 , which is a well-known dielectric and insulator but can be tailored as a semiconducting state by doping with Nb. Nb:STO is a rare and intriguing material because it is relatively transparent and conducting until it is doped with 5% of Nb.…”

Section: Introductionmentioning

confidence: 99%

Reconfigurable Dipole-Induced Resistive Switching of MoS₂ Thin Layers on Nb:SrTiO₃

Yoon

Jin

2019

ACS Appl. Mater. Interfaces

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The controllable band gap and charge-trapping capability of MoS 2 render it suitable for use in the fabrication of various electrical devices with high-k dielectric oxides. In this study, we investigated reconfigurable resistance states in a MoS 2 /Nb:SrTiO 3 heterostructure by using conductive atomic force microscopy. Low-resistance and highresistance states were observed in all MoS 2 because of barrier height modification resulting from redistribution of charge and oxygen vacancies in the vicinity of interfaces. In a thin layer of the MoS 2 film, the carrier density was high, and layer-dependent transport properties appeared because of the charge separation in MoS 2 . The hysteresis and switching voltage of the MoS 2 /Nb:SrTiO 3 heterostructure could be varied by controlling the number of layers of MoS 2 .

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Surface electronic inhomogeneity of the (001)-SrTiO3:Nb crystal with a terrace-structured morphology

Cited by 8 publications

References 28 publications

Parallel Band and Hopping Electron Transport in SrTiO₃

Parallel Band and Hopping Electron Transport in SrTiO₃

Advanced fabrication of Si nanowire FET structures by means of a parallel approach

Reconfigurable Dipole-Induced Resistive Switching of MoS₂ Thin Layers on Nb:SrTiO₃

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Surface electronic inhomogeneity of the (001)-SrTiO3:Nb crystal with a terrace-structured morphology

Cited by 8 publications

References 28 publications

Parallel Band and Hopping Electron Transport in SrTiO3

Parallel Band and Hopping Electron Transport in SrTiO3

Advanced fabrication of Si nanowire FET structures by means of a parallel approach

Reconfigurable Dipole-Induced Resistive Switching of MoS2 Thin Layers on Nb:SrTiO3

Contact Info

Product

Resources

About

Parallel Band and Hopping Electron Transport in SrTiO₃

Parallel Band and Hopping Electron Transport in SrTiO₃

Reconfigurable Dipole-Induced Resistive Switching of MoS₂ Thin Layers on Nb:SrTiO₃