Surface effects on network formation of conjugated polymer wrapped semiconducting single walled carbon nanotubes and thin film transistor performance

Li, Zhao; Ding, Jianfu; Jacques, Laurent; Malenfant, Patrick R. L.

doi:10.1016/j.orgel.2015.07.006

Cited by 38 publications

(40 citation statements)

References 30 publications

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“…Semiconducting films of PCPF 60 -SWNT (with or without excess polymer) or IsoSolS100 were prepared from toluene dispersions, using either a dropcast or soak method. [3,69] Only a few groups have reported dielectric modification for polymer-scSWNT OTFTs, including the use of polyllysine [70] and trichloro(phenyl) silane, [65] but relatively high hysteresis was observed in both cases; low hysteresis values have been obtained by replacing the SiO 2 dielectric with a hydrophobic polymer. The most con sistent and highest performing devices were obtained by combining dropcasting with 3-4 toluene rinsing steps, followed by annealing at 200 °C in air for 1 h. Surface modification of the SiO 2 dielectric with a self assembled monolayer of OTS greatly increased the mobility and significantly decreased the hysteresis in the PCPF 60 -SWNT devices, especially when com bined with the conditions listed above ( Figure S5, Supporting Information).…”

Section: Otft Fabrication and Resultsmentioning

confidence: 99%

“…The average mobilities of the major charge carriers in both air and vacuum are plotted as a function of channel length in Figure 6. [59,64,70] As all the dispersions are highly enriched in scSWNTs, with relatively similar concentrations, other device parameters including film uniformity and density in the channel, in addi tion to the changes in polymer structure, must be considered. For all channel lengths investigated, PCPF 60 -SWNT devices had average mobilities that were 3-7 times greater than the corresponding IsoSolS100 devices.…”

Section: Wwwadvelectronicmatdementioning

confidence: 99%

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Polycarbazole‐Sorted Semiconducting Single‐Walled Carbon Nanotubes for Incorporation into Organic Thin Film Transistors

Rice

Bodnaryk

Mirka

et al. 2018

Adv Elect Materials

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chemical and physical properties, including high mechanical strength, flexi bility, and unique optical and electrical properties. [1,2] The flexibility and stretch ability of carbon nanotubes, combined with their potential for comparable elec trical performance to traditional rigid materials (such as polysilicon and metal oxides) makes them particularly attractive for applications in wearable electronics, prosthetics, and flexible and printed elec tronics. [3] Their capacity for high charge carrier mobilities, [4] combined with solu tion processability, has resulted in the incorporation of SWNTs into photovol taics, [5] field effect transistors, [6] chem ical and biological sensors, [7][8][9] logic circuits, [10,11] and infrared photodetectors for telecommunications. [12] The structural polydispersity of as synthesized SWNTs, both in atomic struc ture and length, remains a major issue hindering widespread applications of these materials into electronics devices. [13] While some synthetic control over the diameter distribution can be achieved, all common techniques produce a dis tribution of chiralities and a mixture of both metallic and semiconducting nano tubes. [14] These mixtures are normally comprised of a ratio of ≈2:1 semiconducting SWNTs (scSWNTs) to metallic SWNTs (mSWNTs), in addition to the retention of impurities such as catalyst particles and amorphous carbon. This disparity in terms of electrical properties is not suitable for organic elec tronic devices, as mSWNTs can act as percolating or directly bridging paths that electrically short SWNT transistors, making the isolation of pure scSWNTs from a raw mixture of the utmost importance. [15] Additionally, SWNTs have poor solu bility and require the introduction of ancillary dispersants to properly exfoliate tube bundles to allow for the fabrication of uniform networks.Significant progress in the dispersion and separation of SWNTs according to electronic character, [16] chirality, [17] diameter, [18] or length [19] has been made over the past two decades. Density gradient ultracentrifugation, [20] gel chromatography, [21] DNA wrapping combined with ion The realization of organic thin film transistors (OTFTs) with performances that support low-cost and large-area fabrication remains an important and challenging topic of investigation. The unique electrical properties of singlewalled carbon nanotubes (SWNTs) make them promising building blocks for next generation electronic devices. Significant advances in the enrichment of semiconducting SWNTs, particularly via π-conjugated polymers for purification and dispersal, have allowed the preparation of high-performance OTFTs on a small scale. The intimate interaction of the conjugated polymer with both SWNTs and the dielectric necessitates the investigation of a variety of conjugated polymer derivatives for device optimization. Here, the preparation of polymer-SWNT composites containing carbazole moieties, a monomer unit that has remained relatively overlooked for the dispersal of large-diameter semiconducting...

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Section: Otft Fabrication and Resultsmentioning

confidence: 99%

Section: Wwwadvelectronicmatdementioning

confidence: 99%

Polycarbazole‐Sorted Semiconducting Single‐Walled Carbon Nanotubes for Incorporation into Organic Thin Film Transistors

Rice

Bodnaryk

Mirka

et al. 2018

Adv Elect Materials

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show abstract

“…[230][231][232] In these early days, most modelling efforts for nanotube networks focused on percolation theory by taking into account the number of metallic nanotubes that are always conducting and thus determine the off-current in a transistor. [107,240] This observation can be explained by the limited gating effect on nanotubes in the second layer, which are very efficiently screened by those in the first layer. The resistance of the network was determined by its density with a certain percolation threshold and the nanotube-nanotube junction resistance.…”

Section: Charge Transportmentioning

confidence: 99%

Semiconducting Single‐Walled Carbon Nanotubes or Very Rigid Conjugated Polymers: A Comparison

Zaumseil

2018

Adv Elect Materials

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With the ability to produce large amounts of purely semiconducting and even monochiral dispersions of single-walled carbon nanotubes (SWCNT) their application as a bulk material in thin film devices on a large scale becomes feasible. Their physical properties, processing, and final devices are quite similar to those of semiconducting polymers. In the extreme case one may view carbon nanotubes as very long, rigid, and fully conjugated polymers. This analogy raises the question whether the knowledge accumulated over the last two decades of processing and studying conjugated polymers could be transferred to solution-processed nanotube devices. Here, the optical and electronic properties of both materials in solution and in thin films are discussed and compared with a focus on their application in optoelectronic devices. Some striking similarities and common issues are highlighted to show the connection between conjugated polymers and SWCNTs as 1D semiconductors.

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“…Until now, great efforts have been made to produce carbon-based photodiode, and scalable production of carbon-based Schottky photodiode arrays with well controlled architectures is still a great challenge. Recently, the high-purity SWCNT thin-film transistors have been successful fabricated [5,18] and the growth and transfer of graphene is becoming increasingly sophisticated [19][20][21], which make it feasible to construct high-quality and large-area all-carbon optoelectronic devices.…”

Section: Introductionmentioning

confidence: 99%

Scalable Production of Graphene/Semiconducting Single-Wall Carbon Nanotube Film Schottky Broadband Photodiode Array with Enhanced Photoresponse

et al. 2018

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A general approach was developed to fabricate graphene/semiconducting single-wall carbon nanotube (graphene/s-SWCNT) film Schottky junctions on a large scale. The graphene/s-SWCNT film photodiodes array based on the vertically stacked Schottky junction were fabricated. The all-carbon cross-shaped structure consisted of multielement graphene/s-SWCNT Schottky photodiodes and presented a rich collection of electronics and photonics. The as-fabricated carbon-based photodiode presented an ultra-broadband photodetection characteristic with a high responsivity of 1.75 A/W at near-infrared wavelengths and a fast response rise time of 15 μs. The as-fabricated device clearly showed gate-tunable and wavelength-dependent photoelectric characteristic. Moreover, the corresponding photocurrent excitation spectrum was also demonstrated. In particular, the Si compatible and high throughput fabrication process for the devices made it conducive for large-area multielement optoelectronics devices.

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Surface effects on network formation of conjugated polymer wrapped semiconducting single walled carbon nanotubes and thin film transistor performance

Cited by 38 publications

References 30 publications

Polycarbazole‐Sorted Semiconducting Single‐Walled Carbon Nanotubes for Incorporation into Organic Thin Film Transistors

Polycarbazole‐Sorted Semiconducting Single‐Walled Carbon Nanotubes for Incorporation into Organic Thin Film Transistors

Semiconducting Single‐Walled Carbon Nanotubes or Very Rigid Conjugated Polymers: A Comparison

Scalable Production of Graphene/Semiconducting Single-Wall Carbon Nanotube Film Schottky Broadband Photodiode Array with Enhanced Photoresponse

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